2SB1189 / 2SB1238 Transistors Medium power transistor (−80V, −0.7A) 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5 0.4 1.0 VCBO −80 Collector-emitter voltage VCEO −80 Emitter-base voltage VEBO −5 IC −0.7 V V V A W 2 1 Junction temperature Tj 150 Storage temperature Tstg −55~+150 1.6 ∗2 °C °C 2SB1238 ∗1 When mounted on a 40×40×0.7 mm ceramic board. ∗2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger. 2.5 Type ∗Denotes h 1.0 0.9 6.8 !Packaging specifications and hFE Package hFE Marking Code Basic ordering unit (pieces) 0.65Max. 2SB1189 MPT3 PQR 2SB1238 ATV PQR BD∗ T100 1000 − TV2 2500 0.5 (1) (2) (3) 2.54 2.54 ROHM : ATV !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −80 − − V IC=−50µA Collector-emitter breakdown voltage BVCEO −80 − − V IC=−2mA Emitter-base breakdown voltage BVEBO −5 − − V IE=−50µA ICBO − − −0.5 µA VCB=−50V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance 1.05 0.45 Taping specifications FE Parameter 4.5 0.5 ∗1 4.4 PC 2SB1238 (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 0.5 14.5 2SB1189 1.5 Unit 0.4 Limits 1.5 0.4 Symbol Collector power dissipation (1) (3) Parameter Collector-base voltage Collector current 0.5 (2) 3.0 !Absolute maximum ratings (Ta=25°C) 2.5 Conditions IEBO − − −0.5 µA VEB=−4V VCE(sat) − −0.2 −0.4 V IC/IB=−500mA/−50mA hFE 82 − 390 − fT − 100 − MHz Cob − 14 20 pF VCE/IC=−3V/−0.1A VCE=−10V, IE=50mA, f=100MHz VCB=−10V, IE=0A, f=1MHz (1) Emitter (2) Collector (3) Base