2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 zExternal dimensions (Units : mm) 2SD2195 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316. Tj 1 10 1 150 Tstg −55~+150 PC 2SD1867 Junction temperature Storage temperature W °C °C 5.1 6.5 0.75 0.9 (1) 2.3 0.9 W(Tc=25°C) ∗3 1.0 ∗1 Single pulse Pw=100ms ∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board. ∗3 Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger. C0.5 0.8Min. 1.5 2.3 2SD1980 0.5 Collector power dissipation 1.5 5.5 0.65 2SD2195 2SD1980 (3) IC Collector current Unit V V V A(DC) A(Pulse) ∗1 W ∗2 (2) Limits 100 100 6 2 3 2 2.3 Symbol VCBO VCEO VEBO 0.5 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 0.4 ROHM : MPT3 EIAJ : SC-62 zAbsolute maximum ratings (Ta = 25°C) 1.5 1.5 0.4 (3) 2.5 9.5 zPackaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SD2195 MPT3 1k~10k DP∗ T100 1000 2SD1980 CPT3 1k~10k − TL 2500 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) ROHM : CPT3 EIAJ : SC-63 2SD1867 ATV 1k~10k − TV2 2500 2SD1867 2.5 6.8 4.4 0.9 ∗ Denotes hFE 1.0 zEquivalent circuit 0.65Max. 14.5 C 0.5 B (1) R1 (2) (3) 2.54 2.54 R2 1.05 E R1 3.5kΩ R2 300Ω B : Base C : Collector E : Emitter (1) Emitter (2) Collector (3) Base ROHM : ATV zElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltag DC current transfer ratio Output capacitance ∗ Measured using pulse current. 0.45 Taping specifications Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE Cob Min. 100 100 − − − 1000 − Typ. − − − − − − 25 Max. − − 10 3 1.5 10000 − Unit V V µA mA V − pF Conditions IC = 50µA IC = 5mA VCB = 100V VEB = 5V IC = 1A , IB = 1mA VCE = 2V , IC = 1A VCB = 10V , IE = 0A , f = 1MHz ∗ ∗