NUS2401SNT1 Integrated PNP/NPN Digital Transistors Array This new option of integrated digital transistors is designed to replace a discrete solution array of three transistors and their external resistor bias network. BRTs (Bias Resistor Transistors) contain a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT technology eliminates these individual components by integrating them into a single device, therefore the integration of three BRTs results in a significant reduction of both system cost and board space. This new device is packaged in the SC−74/Case 318F package which is designed for low power surface mount applications. http://onsemi.com (6) (5) (4) Q3 Features • • • • • • Integrated Design Reduces Board Space and Components Count Simplifies Circuitry Design Offered in Surface Mount Package Technology (SC−74) Available in 3000 Unit Tape and Reel Pb−Free Package is Available Q1 Q2 (1) (2) 6 Typical Applications • • • • 5 4 12 Audio Muting Applications Drive Circuits Applications Industrial: Small Appliances, Security Systems, Automated Test Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette Recorders (3) 3 SC−74 CASE 318F STYLE 4 MARKING DIAGRAM MAXIMUM RATINGS (Maximum Ratings are those values beyond which damage to the device may occur. Electrical Characteristics are not guaranteed over this range.) 50 M Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage V(BR)EBO 7.0 Vdc IC 200 mAdc Collector Current − Continuous Power Dissipation Symbol Max Unit PD 350 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2004 April, 2004 − Rev. 2 = Specific Device Code = Date Code ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic 50 M Device NUS2401SNT1 NUS2401SNT1G Package Shipping† SC−74 3000/Tape & Reel SC−74 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NUS2401SNT1/D NUS2401SNT1 ELECTRICAL CHARACTERISTICS (Unless otherwise noted: TJ = 25°C for typical values, common for Q1, Q2, and Q3, − minus signed for Q3 (PNP) omitted.) Characteristic Symbol Min Typ Max Unit ICBO − − 100 nAdc ICEO − − 500 nAdc IEBO − − − − 500 0.1 A Collector−Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 − − V Collector−Emitter Breakdown Voltage (Note 1) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − V hFE 35 150 60 350 − − − − − − 0.25 0.25 OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter−Base Cutoff Current (VCE = 6.0 V, IC = 0) Q3 Q1, Q2 ON CHARACTERISTICS (Note 1) DC Current Gain Q3 Q1, Q2 Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 1.0 mA) VCE(sat) Q3 Q1, Q2 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) VOL − − 0.2 V Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) VOH 4.9 − − V k Input Resistor Q3 Q1, Q2 R1 7.0 0.13 10 0.175 13 0.22 Resistor Ratio Q3 Q1, Q2 R1/R2 − − 1.0 ∞ − − 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%. http://onsemi.com 2 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) NUS2401SNT1 PD, POWER DISSIPATION (mW) 400 350 300 250 200 150 100 RJA = 357°C/W 50 0 −50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 1 TA = −25°C 0.1 75°C 25°C IC/IB = 10 0.01 0 10 Figure 1. Derating Curve 80 6 Cob, CAPACITANCE (pF) 75°C hFE, DC CURRENT GAIN 70 Figure 2. Maximum Collector Voltage versus Collector Current 1000 25°C TA = −25°C 100 VCE = 10 V f = 1 MHz IE = 0 V TA = 25°C 5 4 3 2 1 0 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0 10 Figure 3. DC Current Gain 30 40 20 50 IC, COLLECTOR CURRENT (mA) 60 Figure 4. Output Capacitance 100 10 25°C Vin, INPUT VOLTAGE (V) IC, COLLECTOR CURRENT (mA) 20 50 60 30 40 IC, COLLECTOR CURRENT (mA) TA = 75°C −25°C 10 VO = 5 V 25°C −25°C 1 TA = 75°C VO = 0.2 V 0.1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Vin, INPUT VOLTAGE (V) 0.8 0.9 0 1 Figure 5. Output Current versus Input Voltage 10 30 40 20 50 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current http://onsemi.com 3 60 NUS2401SNT1 1000 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − Q3 (PNP) TA=−25°C 0.1 25°C 75°C 0.01 0 20 25°C 100 10 −25°C 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 50 1 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=−25°C 10 1 0.1 0.01 0.001 50 100 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0 10 8 9 Figure 10. Output Current versus Input Voltage 10 0.1 100 25°C 75°C Figure 9. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75°C IC, COLLECTOR CURRENT (mA) 40 4 0 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 4 10 NUS2401SNT1 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04. A L 6 5 4 2 3 B S 1 DIM A B C D G H J K L M S D G M J C 0.05 (0.002) K H INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0649 0 10 0.0985 0.1181 MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.65 0 10 2.50 3.00 STYLE 4: PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3 5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3 SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NUS2401SNT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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