ETC 2SB1386R

2SB1386 / 2SB1412 / 2SB1326
Transistors
Low frequency transistor (−20V, −5A)
2SB1386 / 2SB1412 / 2SB1326
!External dimensions (Units : mm)
0.4±0.1
1.5±0.1
(2)
(3)
0.5±0.1
+0.1
0.4−0.05
2SB1326
4.4±0.2
0.9
(2)
14.5±0.5
(3)
2.54 2.54
1.05
ROHM : ATV
∗ Denotes hFE
1.5
ROHM : CPT3
EIAJ : SC-63
1.0
(1)
0.9
1.0±0.2
(1) (2) (3)
2.5±0.2
6.8±0.2
0.5±0.1
0.65±0.1
0.75
2.3±0.2 2.3±0.2
Abbreviated symbol: BH∗
0.65Max.
0.2
2.3+
−0.1
0.5±0.1
0.55±0.1
0.4±0.1
1.5±0.1
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
C0.5
0.9
0.3
5.5+
−0.1
(1)
3.0±0.2
!Structure
Epitaxial planar type
PNP silicon transistor
6.5±0.2
5.1+0.2
−0.1
2.5
0.5±0.1
1.6±0.1
2.5+0.2
−0.1
4.0±0.3
1.5 +0.2
−0.1
9.5±0.5
2SB1412
4.5+0.2
−0.1
1.5±0.3
2SB1386
1.0±0.2
!Features
1) Low VCE(sat).
VCE(sat) = −0.35V (Typ.)
(IC/IB = −4A / −0.1A)
2) Excellent DC current gain
characteristics.
3) Complements the 2SD2098 /
2SD2118 / 2SD2097.
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
(1) Base
(2) Collector
(3) Emitter
2SB1386 / 2SB1412 / 2SB1326
Transistors
!Absolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−30
V
Collector-emitter voltage
VCEO
−20
V
Emitter-base voltage
VEBO
−6
V
Parameter
−5
IC
Collector current
A(DC)
−10
A(Pulse) ∗1
W
0.5
2SB1386
Collector power
dissipation
2SB1412
∗2
2
W
1
W
10
W(TC=25°C)
1
W
PC
2SB1326
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
∗3
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger.
!Electrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
−30
−
−
V
IC=−50µA
Collector-emitter breakdown voltage
BVCEO
−20
−
−
V
IC=−1mA
Emitter-base breakdown voltage
BVEBO
−6
−
−
V
IE=−50µA
ICBO
−
−
−0.5
µA
VCB=−20V
IEBO
−
−
−0.5
µA
VEB=−5V
VCE(sat)
−
−
−1.0
V
IC/IB=−4A/−0.1A
82
−
390
−
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
2SB1386,2SB1412
DC current
transfer ratio
hFE
120
−
390
−
Transition frequency
fT
−
120
−
MHz
Output capacitance
Cob
−
60
−
pF
2SB1326
∗Measured using pulse current.
!Packaging specifications and hFE
Package
Taping
Code
T100
TL
TV2
Basic ordering
unit (pieces)
1000
2500
2500
−
−
Type
hFE
2SB1386
PQR
2SB1412
PQR
−
2SB1326
QR
−
hFE values are classified as follows :
Item
P
Q
R
hFE
82~180
120~270
180~390
−
−
Conditions
VCE=−2V, IC=−0.5A
VCE=−6V, IE=50mA, f=30MHz
VCB=−20V, IE=0A, f=1MHz
∗
∗
∗
2SB1386 / 2SB1412 / 2SB1326
Transistors
!Electrical characteristic curves
-200m
-100m
-50m
-20m
-10m
-5m
-2m
-1m
-4
−15mA
-3
−10mA
-2
−5mA
-1
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2 -1.4
BASE TO EMITTER VOLTAGE : VBE (V)
DC CURRENT GAIN : hFE
200
Ta=100°C
25°C
−25°C
20
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
-1m-2m -5m-0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2
VCE=−2V
1k
200
100
50
Ta=100°C
25°C
−25°C
20
-1m-2m -5m-0.01-0.02-0.05-0.1 -0.2 -0.5 -1 -2
-5 -10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs.
collector current (ΙΙ)
Fig.5 DC current gain vs.
collector current (ΙΙΙ)
-5
lC/lB=10
-2
-1
-0.5
-0.2
Ta=100°C
25°C
−25°C
-0.01
-2m -5m -0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2
-5 -10
COLLECTOR CURRENT : IC (A)
Fig.7 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
50
20
10
5
-1m -2m -5m-0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2
-2.0
500
5
-0.02
-1.6
−2V
−1V
100
Fig.3 DC current gain vs.
collector current (Ι)
10
-0.05
-1.2
VCE=−5V
200
Fig.2 Grounded emitter output
characteristics
5
-0.1
-0.8
1k
500
COLLECTOR CURRENT : IC (A)
10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
DC CURRENT GAIN : hFE
1k
50
-0.4
2k
500
100
0
Ta=25°C
2k
IB=0A
5k
VCE=−1V
2k
5k
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation
characteristics
5k
Ta=25°C
mA
−30
A
−25m
−20mA
DC CURRENT GAIN : hFE
Ta=100°C
25°C
−25°C
−50mA
−45mA
−40mA
−35mA
-5
-5 -10
Ta=100°C
25°C
-0.2
-0.1
−25°C
-0.05
-0.02
-0.01
-2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2
Ta=25°C
-2
-1
-0.5
-0.2
-0.1
IC/IB=50/1
40/1
/1
30/1
10/1
-0.05
-0.02
-0.01
-2m -5m -0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2
-5 -10
Fig.6 Collector-emitter saturation
voltage vs. collector current (Ι)
-2
-1
-5
-5 -10
COLLECTOR CURRENT : IC (A)
lC/lB=30
-0.5
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
-2
-1
-500m
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
-5
VCE=−2V
-5
-5 -10
COLLECTOR CURRENT : IC (A)
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙΙ)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
-10
-5
lC/lB=40
-2
−25°C
-1
25°C
-0.5
-0.2
-0.1
-0.05
Ta=100°C
-0.02
-0.01
-2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2
-5 -10
COLLECTOR CURRENT : IC (A)
Fig.9 Collector-emitter saturation
voltage vs. collector current (IV)
2SB1386 / 2SB1412 / 2SB1326
1 000
lC/lB=50
−25°C
25°C
Ta=100°C
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
200
100
50
20
10
5
2
1
1
-0.01
-2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2
Ta=25°C
VCE=−6V
500
-5 -10
COLLECTOR CURRENT : IC (A)
Fig.11 Gain bandwidth product
vs. emitter current
EMITTER INTPUT CAPACITANCE : Cib (pF)
COLLECTOR CURRENT : IC (A)
-10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.13 Emitter input capacitance
vs. emitter-base voltage
ms
-5
ms
-2
1
500m
00
-1
2
0
=1
Pw
-0.5
5
DC
20
10
=1
50
20
Pw
100
-0.2
Ta=25°C
∗Single
nonrepetitive
pulse
50
200
10
-0.1
50 100 200 500 1000
100
Ta=25°C
f=1MHz
IC=0A
500
10 20
5
EMITTER CURRENT : IE (mA)
Fig.10 Collector-emitter saturation
voltage vs. collector current (V)
1000
2
200m
100m
50m
20m
10m
0.2 0.5 1
2
5 10 20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : −VCE (V)
Fig.14 Safe operation area
(2SB1412)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
-5
TRANSEITION FREQUENCY : fT (MHz)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Transistors
1000
Ta=25°C
f=1MHz
IE=0A
500
200
100
50
20
10
-0.1 -0.2
-0.5 -1
-2
-5 -10 -20
-50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.12 Collector output capacitance
vs. collector-base voltage