2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (−20V, −5A) 2SB1386 / 2SB1412 / 2SB1326 !External dimensions (Units : mm) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 +0.1 0.4−0.05 2SB1326 4.4±0.2 0.9 (2) 14.5±0.5 (3) 2.54 2.54 1.05 ROHM : ATV ∗ Denotes hFE 1.5 ROHM : CPT3 EIAJ : SC-63 1.0 (1) 0.9 1.0±0.2 (1) (2) (3) 2.5±0.2 6.8±0.2 0.5±0.1 0.65±0.1 0.75 2.3±0.2 2.3±0.2 Abbreviated symbol: BH∗ 0.65Max. 0.2 2.3+ −0.1 0.5±0.1 0.55±0.1 0.4±0.1 1.5±0.1 (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 C0.5 0.9 0.3 5.5+ −0.1 (1) 3.0±0.2 !Structure Epitaxial planar type PNP silicon transistor 6.5±0.2 5.1+0.2 −0.1 2.5 0.5±0.1 1.6±0.1 2.5+0.2 −0.1 4.0±0.3 1.5 +0.2 −0.1 9.5±0.5 2SB1412 4.5+0.2 −0.1 1.5±0.3 2SB1386 1.0±0.2 !Features 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097. 0.45±0.1 (1) Emitter (2) Collector (3) Base (1) Base (2) Collector (3) Emitter 2SB1386 / 2SB1412 / 2SB1326 Transistors !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO −30 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −6 V Parameter −5 IC Collector current A(DC) −10 A(Pulse) ∗1 W 0.5 2SB1386 Collector power dissipation 2SB1412 ∗2 2 W 1 W 10 W(TC=25°C) 1 W PC 2SB1326 Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗3 ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ∗3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 or larger. !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −30 − − V IC=−50µA Collector-emitter breakdown voltage BVCEO −20 − − V IC=−1mA Emitter-base breakdown voltage BVEBO −6 − − V IE=−50µA ICBO − − −0.5 µA VCB=−20V IEBO − − −0.5 µA VEB=−5V VCE(sat) − − −1.0 V IC/IB=−4A/−0.1A 82 − 390 − Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage 2SB1386,2SB1412 DC current transfer ratio hFE 120 − 390 − Transition frequency fT − 120 − MHz Output capacitance Cob − 60 − pF 2SB1326 ∗Measured using pulse current. !Packaging specifications and hFE Package Taping Code T100 TL TV2 Basic ordering unit (pieces) 1000 2500 2500 − − Type hFE 2SB1386 PQR 2SB1412 PQR − 2SB1326 QR − hFE values are classified as follows : Item P Q R hFE 82~180 120~270 180~390 − − Conditions VCE=−2V, IC=−0.5A VCE=−6V, IE=50mA, f=30MHz VCB=−20V, IE=0A, f=1MHz ∗ ∗ ∗ 2SB1386 / 2SB1412 / 2SB1326 Transistors !Electrical characteristic curves -200m -100m -50m -20m -10m -5m -2m -1m -4 −15mA -3 −10mA -2 −5mA -1 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 BASE TO EMITTER VOLTAGE : VBE (V) DC CURRENT GAIN : hFE 200 Ta=100°C 25°C −25°C 20 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -1m-2m -5m-0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 VCE=−2V 1k 200 100 50 Ta=100°C 25°C −25°C 20 -1m-2m -5m-0.01-0.02-0.05-0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current (ΙΙ) Fig.5 DC current gain vs. collector current (ΙΙΙ) -5 lC/lB=10 -2 -1 -0.5 -0.2 Ta=100°C 25°C −25°C -0.01 -2m -5m -0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage vs. collector current (ΙΙ) 50 20 10 5 -1m -2m -5m-0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -2.0 500 5 -0.02 -1.6 −2V −1V 100 Fig.3 DC current gain vs. collector current (Ι) 10 -0.05 -1.2 VCE=−5V 200 Fig.2 Grounded emitter output characteristics 5 -0.1 -0.8 1k 500 COLLECTOR CURRENT : IC (A) 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE 1k 50 -0.4 2k 500 100 0 Ta=25°C 2k IB=0A 5k VCE=−1V 2k 5k COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 5k Ta=25°C mA −30 A −25m −20mA DC CURRENT GAIN : hFE Ta=100°C 25°C −25°C −50mA −45mA −40mA −35mA -5 -5 -10 Ta=100°C 25°C -0.2 -0.1 −25°C -0.05 -0.02 -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 Ta=25°C -2 -1 -0.5 -0.2 -0.1 IC/IB=50/1 40/1 /1 30/1 10/1 -0.05 -0.02 -0.01 -2m -5m -0.01-0.02-0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 Fig.6 Collector-emitter saturation voltage vs. collector current (Ι) -2 -1 -5 -5 -10 COLLECTOR CURRENT : IC (A) lC/lB=30 -0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -2 -1 -500m COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) -5 VCE=−2V -5 -5 -10 COLLECTOR CURRENT : IC (A) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙΙ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -10 -5 lC/lB=40 -2 −25°C -1 25°C -0.5 -0.2 -0.1 -0.05 Ta=100°C -0.02 -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 COLLECTOR CURRENT : IC (A) Fig.9 Collector-emitter saturation voltage vs. collector current (IV) 2SB1386 / 2SB1412 / 2SB1326 1 000 lC/lB=50 −25°C 25°C Ta=100°C -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 200 100 50 20 10 5 2 1 1 -0.01 -2m -5m -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1 -2 Ta=25°C VCE=−6V 500 -5 -10 COLLECTOR CURRENT : IC (A) Fig.11 Gain bandwidth product vs. emitter current EMITTER INTPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (A) -10 EMITTER TO BASE VOLTAGE : VEB (V) Fig.13 Emitter input capacitance vs. emitter-base voltage ms -5 ms -2 1 500m 00 -1 2 0 =1 Pw -0.5 5 DC 20 10 =1 50 20 Pw 100 -0.2 Ta=25°C ∗Single nonrepetitive pulse 50 200 10 -0.1 50 100 200 500 1000 100 Ta=25°C f=1MHz IC=0A 500 10 20 5 EMITTER CURRENT : IE (mA) Fig.10 Collector-emitter saturation voltage vs. collector current (V) 1000 2 200m 100m 50m 20m 10m 0.2 0.5 1 2 5 10 20 50 100 200 500 COLLECTOR TO EMITTER VOLTAGE : −VCE (V) Fig.14 Safe operation area (2SB1412) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) -5 TRANSEITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors 1000 Ta=25°C f=1MHz IE=0A 500 200 100 50 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.12 Collector output capacitance vs. collector-base voltage