Transistor 2SB0621, 2SB0621A (2SB621, 2SB621A) Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A) Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). High transition frequency fT. ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Collector to 2SB0621 base voltage 2SB0621A Collector to 2SB0621 Ratings –30 VCBO Emitter to base voltage VEBO Peak collector current ICP V –60 V –50 –5 V –1.5 A Collector current IC –1 A Collector power dissipation PC 750 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Symbol ICBO Collector to base 2SB0621 voltage 2SB0621A Collector to emitter 2SB0621 voltage 2SB0621A Emitter to base voltage 1.27 1.27 1 2 3 2.54±0.15 Conditions min typ VCB = –20V, IE = 0 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A IC = –10µA, IE = 0 VCEO IC = –2mA, IB = 0 VEBO IE = –10µA, IC = 0 –5 VCE = –10V, IC = –500mA 85 VCE = –5V, IC = –1A 50 * hFE2 max Unit – 0.1 µA –30 VCBO hFE1 Forward current transfer ratio +0.2 0.45 –0.1 (Ta=25˚C) Parameter Collector cutoff current +0.2 0.45 –0.1 –25 VCEO emitter voltage 2SB0621A Unit 2.3±0.2 ● 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 V –60 –25 V –50 V 340 Collector to emitter saturation voltage VCE(sat) IC = –500mA, IB = –50mA – 0.2 –0.4 V Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA – 0.85 –1.2 V Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 200 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 *h FE1 MHz 30 pF Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 Note.) The Part numbers in the Parenthesis show conventional part number. 1 Transistor 2SB0621, 2SB0621A PC — Ta IC — VCE 1.0 IC — IB –1.5 –1.2 0.7 0.6 IB=–10mA –9mA –8mA –1.0 –7mA –6mA – 0.75 0.5 0.4 –5mA –4mA –3mA – 0.5 0.3 0.2 –2mA – 0.25 –1mA – 0.6 – 0.4 – 0.2 60 80 100 120 140 160 0 0 –8 –10 –10 –3 –1 Ta=75˚C 25˚C –30 –10 –3 25˚C Ta=–25˚C –1 75˚C – 0.1 – 0.03 – 0.03 –1 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) Collector output capacitance Cob (pF) 140 120 100 80 60 40 20 0 3 10 30 Emitter current IE (mA) 100 –8 –10 –12 VCE=–10V –3 400 350 300 Ta=75˚C 250 200 25˚C 150 –25˚C 100 50 0 – 0.01 – 0.03 – 0.1 – 0.3 –10 –1 –3 –10 Collector current IC (A) VCER — RBE –120 IE=0 f=1MHz Ta=25˚C 45 40 35 30 25 20 15 10 5 0 –1 –6 450 Cob — VCB 160 1 –1 50 VCB=–10V Ta=25˚C 180 –4 500 Collector current IC (A) fT — IE 200 –2 Base current IB (mA) IC/IB=10 – 0.3 –25˚C – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0 hFE — IC –100 Base to emitter saturation voltage VBE(sat) (V) –30 – 0.1 –6 VBE(sat) — IC IC/IB=10 – 0.3 –4 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 –2 Forward current transfer ratio hFE 40 –3 –10 –30 –100 Collector to base voltage VCB (V) Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) – 0.8 0 0 Transition frequency fT (MHz) –1.0 0.1 0 2 VCE=–10V TC=25˚C Collector current IC (A) –1.25 0.8 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C 0.9 IC=–10mA Ta=25˚C –100 –80 –60 2SB0621A –40 2SB0621 –20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) Transistor 2SB0621, 2SB0621A ICEO — Ta 104 Area of safe operation (ASO) –10 VCE=–10V Single pulse Ta=25˚C –3 Collector current IC (A) ICP –1 IC t=10ms – 0.3 102 t=1s – 0.1 – 0.03 10 – 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 –1 2SB0621A – 0.01 2SB0621 ICEO (Ta) ICEO (Ta=25˚C) 103 –3 –10 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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