2SC2463 Silicon NPN Epitaxial REJ03G0698-0200 (Previous ADE-208-1064) Rev.2.00 Aug.10.2005 Application Low frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Symbol VCBO VCEO Ratings 55 50 Unit V V Emitter to base voltage Collector current Collector power dissipation VEBO IC PC 5 100 150 V mA mW Junction temperature Storage temperature Tj Tstg 150 –55 to +150 °C °C Rev.2.00 Aug 10, 2005 page 1 of 6 2SC2463 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Note: 1. The 2SC2463 is grouped by hFE as follows. Grade D E Mark DD DE hFE 250 to 500 400 to 800 Rev.2.00 Aug 10, 2005 page 2 of 6 Min 55 50 5 — — 250 — — Typ — — — — — — — — Max — — — 0.5 0.5 800 0.5 0.75 Unit V V V µA µA V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 30 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA 2SC2463 Main Characteristics Typical Output Characteristics 150 P 10 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 100 50 50 0 100 8 6 4 2 4 0 150 DC Current Transfer Ratio vs. Collector Current 00 12 16 20 Typical Transfer Characteristics 700 5 VCE = 12 V Collector Current IC (mA) DC Current Transfer Ratio hFE 8 600 500 Ta 5°C =7 400 25 300 200 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5 10 20 VCE = 12 V 4 3 2 1 0 50 0.2 Collector Current IC (mA) VCE = 12 V IC = 2 mA 0.7 0.6 0.5 0.4 -20 0 20 40 60 Ambient Temperature Ta (°C) Rev.2.00 Aug 10, 2005 page 3 of 6 80 0.6 0.8 1.0 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 0.9 0.4 Base to Emitter Voltage VBE (V) Base to Emitter Voltage vs. Ambient Temperature 0.8 =2 Collector to Emitter Voltage VCE (V) Ambient Temperature Ta (°C) Base to Emitter Voltage VBE (V) C 26 24 22 20 18 16 14 12 10 8 6 4 2 µA IB = 0 10 IE = 0 f= 1 MHz 5 2 1 1 2 5 10 Collector to Base Voltage VCB (V) mW 24 2SC2463 Contours of Constant Noise Figure Signal Source Resistance Rg (kΩ) 10 IC = 0 f= 1 MHz 5 2 1 1 2 5 10 100 1 dB 10 d B 8 dB 6 dB 4 dB 2 dB 1 Emitter Input Capacitance Cie (pF) Emitter Input Capacitance vs. Emitter to Base Voltage dB 30 2 dB 4d 10 B 6d B 3 8 dB 10 dB 1.0 0.3 0.1 0.001 0.003 0.01 1 dB dB dB 6 8 1.0 dB dB dB dB 8 dB 6 dB 4 2 3 VCE = 6 V f = 120 Hz dB 2 4 0.3 0.1 0.001 0.003 0.01 0.03 0.1 0.3 0.3 1.0 3.0 100 VCE = 6 V f = 1 kHz 30 4 2 10 1 2 3 4 1.0 1.0 0.3 1 dB dB 10 8 dB 6 dB dB dB dB dB 0.1 0.001 0.003 0.01 0.03 0.1 0.3 1.0 Collector Current IC (mA) Noise Figure vs. Collector to Emitter Voltage Noise Figure vs. Frequency 12 10 10 Noise Figure NF (dB) VCE = 6 V IC = 0.1 mA Rg = 10 kΩ 8 6 4 2 IC = 0.1 mA f = 10 Hz Rg = 10 kΩ 8 6 4 2 0 0 10 20 50 100 200 Frequency f (Hz) Rev.2.00 Aug 10, 2005 page 4 of 6 500 3.0 d 6 B d 8 B 10 d B dB Collector Current IC (mA) Noise Figure NF (dB) 0.1 Contours of Constant Noise Figure Signal Source Resistance Rg (kΩ) 100 1 Signal Source Resistance Rg (kΩ) Contours of Constant Noise Figure 10 0.03 Collector Current IC (mA) Emitter to Base Voltage VEB (V) 30 VCE = 6 V f = 10 Hz 1k 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) 3.0 2SC2463 Noise Figure vs. Collector to Emitter Voltage Noise Figure vs. Collector to Emitter Voltage 10 IC = 0.1 mA f = 120 Hz Rg = 10 kΩ 8 Noise Figure NF (dB) Noise Figure NF (dB) 10 6 4 2 IC = 0.1 mA f = 1 kHz Rg = 10 kΩ 8 6 4 2 0 0 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 5 of 6 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) 2SC2463 Package Dimensions JEITA Package Code RENESAS Code Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV PLSP0003ZB-A SC-59A D MASS[Typ.] 0.011g A Q e E HE L A c LP L1 Reference Symbol A3 A x M S b A e A2 A e1 A1 S b b1 c1 I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Part Name 2SC2463DETL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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