Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast switching speed. unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45 1 2 3 1 : Emitter 2 : Collector 3 : Base SANYO : NP ( ) : 2SA1207 Specifications 1.3 1.3 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)180 V Collector-to-Emitter Voltage VCEO VEBO (–)160 V (–)5 V IC (–)70 mA Collector Current (Pulse) ICP (–)140 mA Collector Dissipation 600 mW Junction Temperature PC Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Emitter-to-Base Voltage Collector Current Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain VCE=(–)5V, IC=(–)10mA Gain-Bandwidth Product hFE fT Output Capacitance Cob VCB=(–)10V, f=1MHz (2.5)2.0 IC=(–)30mA, IB=(–)3mA 0.08 (–0.14) Collector-to-Emitter Saturation Voltage VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 100* VCE=(–)10V, IC=(–)10mA VCE(sat) * : The 2SA1207/2SC2909 are classified by 10mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 max Unit (–)0.1 µA (–)0.1 µA 400* 150 MHz pF 0.3 (–0.4) V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70502TN (KT)/71598HA (KT)/4190MO/3187AT/2255MY, TS No.778-1/4 2SA1207/2SC2909 Continued from preceding page. Parameter Symbol Turn-ON Time min typ max Unit ton See specified Test Circuit 0.1 µs tf See specified Test Circuit 0.2 µs tstg See specified Test Circuit 1.0 µs Fall Time Storage Time Ratings Conditions Switching Time Test Circuit IN OUT IB1 3kΩ IB2 2kΩ 5kΩ 50Ω + + 1µF 1µF 20V --2V IC=10IB1=--10IB2=10mA (For PNP, the polarity is reversed.) IC -- VCE --60 IC -- VCE 60 2SA1207 3 --0 A --0.2m --0.15mA --0.1mA --20 --0.05mA --10 0 0 --20 --30 --40 --25°C --40 °C 25°C 20 30 40 50 Collector-to-Emitter Voltage, VCE – V 2SA1207 VCE=--5V Ta=7 5 Collector Current, IC – mA 10 60 ITR02990 IC -- VBE 80 --50 2SC2909 VCE=5V 70 60 50 40 30 20 10 --10 0 0 0 ITR02989 --60 --20 0 --60 IC -- VBE --70 --30 0.05mA IB=0 --50 Collector-to-Emitter Voltage, VCE – V --80 0.1mA 20 10 IB=0 --10 0.15mA 30 25°C --25°C --30 40 A 5m 0.2 A 0.2m Ta=75° C --40 0.3 m .25 mA 50 A Collector Current, IC – mA . --0 Collector Current, IC – mA Collector Current, IC – mA --50 2SC2909 mA --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE – V ITR02991 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE – V 1.0 1.2 ITR02992 No.778-2/4 2SA1207/2SC2909 hFE -- IC 1000 7 Ta=75°C 2 2 --25°C 7 5 3 5 7 2 --1.0 3 5 --10 2 3 7 --100 ITR02993 fT -- IC 2SA1207 VCE=--10V 3 2 100 7 5 3 2 5 7 --1.0 2 3 5 7 --10 2 3 2 1.0 3 2SA1207 f=1MHz 5 3 2 1.0 5 7 2 10 3 7 100 ITR02994 fT -- IC 2SC2909 VCE=10V 2 100 7 5 3 2 5 7 1.0 2 3 5 7 10 2 3 5 7 100 ITR02996 Collector Current, IC – mA Cob -- VCB 2SC2909 f=1MHz 7 7 5 Collector Current, IC – mA 10 Output Capacitance, Cob – pF Output Capacitance, Cob – pF 7 3 10 7 --100 ITR02995 Cob -- VCB 7 5 3 2 1.0 7 3 5 7 2 --10 3 5 --100 ITR02997 VCE(sat) -- IC 5 2SA1207 IC / IB=10 3 2 --1000 7 5 3 2 25°C Ta=75°C --100 7 --25°C 5 5 7 --1.0 2 3 5 7 --10 2 Collector Current, IC – mA 3 5 7 5 7 --100 ITR02999 2 3 5 7 2 10 3 5 Collector-to-Base Voltage, VCB -- V 7 100 ITR02998 VCE(sat) -- IC 1000 2SC2909 IC / IB=10 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 2 Collector-to-Base Voltage, VCB -- V Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 5 5 5 Collector Current, IC – mA 10 3 3 10 5 Gain-Bandwidth Product, fT – MHz Gain-Bandwidth Product, fT – MHz 7 Collector Current, IC – mA 5 5 7 5 2 2 10 --25°C 100 100 10 2SC2909 VCE=5V 25°C Ta=75°C 3 25°C DC Current Gain, hFE DC Current Gain, hFE 5 3 hFE -- IC 5 2SA1207 VCE=--5V 5 3 2 25°C 100 Ta=75°C 7 5 --25°C 3 2 5 7 1.0 2 3 5 7 10 2 Collector Current, IC – mA 3 5 7 100 ITR03000 No.778-3/4 2SA1207/2SC2909 VBE(sat) -- IC --10 5 3 2 25°C Ta=--25°C --1.0 7 75°C 5 3 2 5 7 --1.0 2 3 5 7 --10 2 3 Collector Current, IC – mA 2SC2909 IC / IB=10 7 Base-to-Emitter Saturation Voltage, VBE (sat) – V Base-to-Emitter Saturation Voltage, VBE (sat) – V 7 VBE(sat) -- IC 10 2SA1207 IC / IB=10 5 3 2 25°C 1.0 7 7 --100 ITR03001 75°C 5 3 5 Ta=--25°C 5 7 1.0 2 ASO 3 7 2SA1207 / 2SC2909 IC=70mA 7 5 DC 3 Op era 2 tio n 10 7 5 Single pulse Ta=25°C (For PNP, minus sign is omitted.) 3 5 7 10 3 5 7 100 ITR03002 600 Collector Dissipation, PC – mW 100 2 10 2SA1207 / 2SC2909 ICP=140mA s 1m ms 10 ms 0 10 Collector Current, IC – mA 5 PC -- Ta 700 2 2 3 Collector Current, IC – mA 2 3 5 7 100 Collector-to-Emitter Voltage, VCE – V 2 ITR03003 500 400 300 200 100 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 ITR03004 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2002. Specifications and information herein are subject to change without notice. PS No.778-4/4