P01 Series ® 0.8A SCRs SENSITIVE MAIN FEATURES: A Symbol Value Unit IT(RMS) 0.8 A VDRM/VRRM 400 and 600 V IGT 5 to 200 µA G K DESCRIPTION Thanks to highly sensitive triggering levels, the P01 SCR series is suitable for all applications where available gate current is limited, such as ground fault circuit interruptors, pilot circuits in solid state relays, stand-by mode power supplies, smoke and alarm detectors. Available in through-hole or surface mount packages, the voltage capability of this series has been upgrated since its introduction, to reach 600 V. TO-92 (P01xxA) SOT-223 (P01xxN) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) TO-92 Tl = 55°C SOT-223 Tamb = 70°C TO-92 Tl = 55°C SOT-223 Tamb = 70°C Value Unit 0.8 A 0.5 A Non repetitive surge peak on-state current tp = 8.3 ms I²t Value for fusing tp = 10ms Tj = 25°C 0.24 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 1 A Tj = 125°C 0.1 W - 40 to + 150 - 40 to + 125 °C ITSM I ²t PG(AV) Tstg Tj Average gate power dissipation Storage junction temperature range Operating junction temperature range September 2000 - Ed: 3 tp = 10 ms 8 Tj = 25°C 7 A 1/6 P01 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol P01xx Test Conditions Unit IGT RL = 140 Ω VD = 12 V VGT VGD VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ VRG IRG = 10 µA IH IT = 50 mA IL IG = 1 mA Tj = 125°C RGK = 1 kΩ RGK = 1 kΩ dV/dt VD = 67 % VDRM VTM ITM = 1.6 A Vt0 Rd RGK = 1 kΩ 02 11 18 MIN. - 4 0.5 MAX. 200 25 5 µA MAX. 0.8 V MIN. 0.1 V MIN. 8 V MAX. 5 mA MAX. 6 mA Tj = 125°C MIN. Tj = 25°C MAX. 1.95 V Threshold voltage Tj = 125°C MAX. 0.95 V Dynamic resistance Tj = 125°C MAX. 600 mΩ MAX. 1 µA 10 µA 100 µA tp = 380 µs IDRM VDRM = VRRM = 400 V RGK = 1 kΩ IRRM VDRM = VRRM = 600 V RGK = 1 kΩ VDRM = VRRM RGK = 1 kΩ 75 Tj = 25°C Tj = 125°C MAX. 80 75 V/µs THERMAL RESISTANCES Symbol Parameter Rth(j-i) Junction to case (DC) Rth(j-t) Junction to tab (DC) Rth(j-a) Junction to ambient S=5 cm² Value Unit TO-92 80 °C/W SOT-223 30 TO-92 150 SOT-223 60 S = Copper surface under tab PRODUCT SELECTOR Voltage Part Number 400 V P0102DA X P0102DN X Sensitivity Package 200 µA TO-92 600 V 200 µA SOT-223 P0102MA X 200 µA TO-92 P0102MN X 200 µA SOT-223 25 µA TO-92 P0111DA X P0111DN X 25 µA SOT-223 P0111MA X 25 µA TO-92 P0111MN X 25 µA SOT-223 5 µA TO-92 P0118DA X P0118DN X 5 µA SOT-223 P0118MA X 5 µA TO-92 P0118MN X 5 µA SOT-223 2/6 °C/W P01 Series ORDERING INFORMATION P 01 02 D N 1AA3 Blank SENSITIVE SCR SERIES VOLTAGE: D: 400V M: 600V CURRENT: 0.8A PACKING MODE: 1AA3: TO-92 bulk (preferred) 2AL3: TO-92 ammopack 5AA4: SOT-223 Tape & Reel PACKAGE: A: TO-92 N: SOT-223 SENSITIVITY: 02: 200µA 11: 25µA 18: 5µA OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode P01xxyA 1AA3 P01xxyA 0.2 g 2500 Bulk P01xxyA 2AL3 P01xxyA 0.2 g 2000 Ammopack P0102yN 5AA4 P2y 0.12 g 1000 Tape & reel P0111yN 5AA4 P1y 0.12 g 1000 Tape & reel P0118yN 5AA4 P8y 0.12 g 1000 Tape & reel Note: xx = sensitivity, y = voltage Fig. 1: Maximum average power dissipation versus average on-state current. P(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout for SOT-223). 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Fig. 2-1: Average and D.C. on-state current versus lead temperature. IT(av)(A) Tlead or Ttab (°C) 0 25 75 50 100 125 Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. K = [Zth(j-a)/Rth(j-a)] IT(av)(A) 1.00 0.10 Tamb(°C) 0 25 50 75 tp(s) 100 125 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 3/6 P01 Series Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 5:Relative variation of holding current versus gate-cathode resistance (typical values). IH[Rgk]/IH[Rgk=1kΩ] IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C 6 5 4 3 2 1 Tj(°C) 0 -40 -20 0 20 Rgk(kΩ) 40 60 80 100 120 140 Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). dV/dt[Cgk] / dV/dt[Rgk=1kΩ] dV/dt[Rgk] / dV/dt[Rgk=1kΩ] 10 10.0 8 6 1.0 4 2 Rgk(kΩ) 0.1 0 0.2 0.4 0.6 0.8 1.0 Cgk(nF) 1.2 1.4 1.6 1.8 2.0 Fig. 8: Surge peak on-state current versus number of cycles. 0 0 1 3 2 5 4 6 7 Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. ITSM(A), I2t(A2s) ITSM(A) 100.0 8 7 tp=10ms 6 Onecycle 5 10.0 Non repetitive Tj initial=25°C 4 Repetitive Tamb=25°C 3 1.0 2 1 0 tp(ms) Numberofcycles 1 4/6 10 100 1000 0.1 0.01 0.10 1.00 10.00 P01 Series Fig. 10: On-state characteristics (maximum values). Fig. 11: SOT-223 Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm). ITM(A) Rth(j-a) (°C/W) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 1E+1 Ω 1E+0 1E-1 VTM(V) 1E-2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 S (cm2) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 PACKAGE MECHANICAL DATA TO-92 (Plastic) DIMENSIONS REF. A Min. a B C F Millimeters D E A B C D E F a Typ. Max. Inches Min. 1.35 Typ. Max. 0.053 4.70 0.185 2.54 0.100 4.40 12.70 0.173 0.500 3.70 0.50 0.146 0.019 5/6 P01 Series PACKAGE MECHANICAL DATA SOT-223 (Plastic) DIMENSIONS c A REF. V A1 Millimeters Min. Typ. Max. Inches Min. Typ. Max. B A A1 B B1 c D e e1 E H V e1 D B1 H E e 0.02 0.60 2.90 0.24 6.30 3.30 6.70 0.70 3.00 0.26 6.50 2.3 4.6 3.50 7.00 1.80 0.071 0.1 0.0008 0.004 0.85 0.024 0.027 0.034 3.15 0.114 0.118 0.124 0.35 0.009 0.010 0.014 6.70 0.248 0.256 0.264 0.090 0.181 3.70 0.130 0.138 0.146 7.30 0.264 0.276 0.287 10° max FOOTPRINT DIMENSIONS (in millimeters) SOT-223 (Plastic) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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