Two-chip MicroCapacitance (MC) SIDACtor Device Two-chip MicroCapacitance (MC) SIDACtor Device 1 (T) 2 (G) 3 (R) The two-chip modified TO-220 MC SIDACtor solid state device protects telecommunication equipment in applications that reference Tip and Ring to earth ground but do not require balanced protection. SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968-A (formerly known as FCC Part 68). Electrical Parameters: A-rated VDRM Volts Part Number * VS Volts VDRM Volts Pins 1-2, 3-2 VS Volts Pins 1-3 VT Volts IDRM µAmps IS mAmps IT Amps IH mAmps CO pF P0302AA MC 6 25 12 50 4 5 800 2.2 50 45 P0602AA MC 25 40 50 80 4 5 800 2.2 50 25 VS Volts VDRM Volts VS Volts VT Volts IDRM µAmps IS mAmps IT Amps IH mAmps CO pF Electrical Parameters: C-rated VDRM Volts Part Number * Pins 1-2, 3-2 Pins 1-3 P0602AC MC 25 40 50 80 4 5 800 2.2 50 60 P1402AC MC 58 77 116 154 4 5 800 2.2 150 60 P1602AC MC 65 95 130 190 4 5 800 2.2 150 60 P2202AC MC 90 130 180 260 4 5 800 2.2 150 50 P2702AC MC 120 160 240 320 4 5 800 2.2 150 50 P3002AC MC 140 180 280 360 4 5 800 2.2 150 50 P3602AC MC 170 220 340 440 4 5 800 2.2 150 40 P4202AC MC 190 250 380 500 4 5 800 2.2 150 40 P4802AC MC 220 300 440 600 4 5 800 2.2 150 40 P6002AC MC 275 350 550 700 4 5 800 2.2 150 40 * For surge ratings, see table below. General Notes: • All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range. • IPP is a repetitive surge rating and is guaranteed for the life of the product. • Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. • VDRM is measured at IDRM. • VS is measured at 100 V/µs. • Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request. • Off-state capacitance (CO) is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias. Surge Ratings Series IPP 2x10 µs Amps IPP 8x20 µs Amps IPP 10x160 µs Amps IPP 10x560 µs Amps IPP 10x1000 µs Amps ITSM 60 Hz Amps di/dt Amps/µs A 150 150 90 50 45 20 500 C 500 400 200 150 100 50 500 http://www.littelfuse.com +1 972-580-7777 2 - 32 © 2004 Littelfuse, Inc. SIDACtor® Data Book and Design Guide Two-chip MicroCapacitance (MC) SIDACtor Device Thermal Considerations Package Symbol Modified TO-220 Value Unit Operating Junction Temperature Range -40 to +150 °C TS Storage Temperature Range -65 to +150 °C 50 °C/W Thermal Resistance: Junction to Ambient Data Sheets RθJA PIN 1 Parameter TJ PIN 3 PIN 2 IPP – Peak Pulse Current – %IPP +I +I IITT ISS IH IDRM -V -V +V +V V VTT V VDRM DRM V VS S Peak Value 100 tr = rise time to peak value td = decay time to half value Waveform = tr x td 50 Half Value 0 0 tr td t – Time (µs) -I -I V-I Characteristics tr x td Pulse Wave-form IH 8 6 25 ˚C 4 2 IH (TC = 25 ˚C) 10 Ratio of Percent of VS Change – % 14 12 0 -4 2.0 1.8 1.6 1.4 25 ˚C 1.2 1.0 0.8 0.6 0.4 -40 -20 0 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 Case Temperature (TC) – ˚C 20 40 60 80 100 120 140 160 Junction Temperature (TJ) – ˚C Normalized VS Change versus Junction Temperature © 2004 Littelfuse, Inc. SIDACtor® Data Book and Design Guide Normalized DC Holding Current versus Case Temperature 2 - 33 http://www.littelfuse.com +1 972-580-7777