Inchange Semiconductor Product Specification 2SC4981 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor ・Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-Peak 14 A IB Base current 1.5 A IBM Base current-peak 2 A PT Total power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 5.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification 2SC4981 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat Collector-emitter saturation voltage IC=3.5A; IB=0.2A 0.3 V VBEsat Base-emitter saturation voltage IC=3.5A; IB=0.2A 1.2 V At rated volatge 0.1 mA 0.1 mA ICBO CONDITIONS TYP. MAX 80 UNIT V Collector cut-off current ICEO Collector cut-off current IEBO Emitter cut-off current At rated volatge hFE DC current gain IC=3.5A ; VCE=2V Transition frequency IC=0.7A ; VCE=10V fT MIN 70 50 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=3.5A;IB1=0.35A IB2=0.35A ,RL=8Ω VBB2=4V 2 0.3 μs 1.5 μs 0.2 μs Inchange Semiconductor Product Specification 2SC4981 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3