Inchange Semiconductor Product Specification 2SD2196 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High DC current gain ・DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-peak 22 A IB Base current 1 A IBM Base current-peak 2 A PT Total power dissipation 65 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 1.92 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case 1 Inchange Semiconductor Product Specification 2SD2196 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=50m A;IB=0 VCEsat Collector-emitter saturation voltage IC=10 A;IB=30mA 1.5 V VBEsat Base-emitter saturation voltage IC=10 A;IB=30mA 2.0 V ICBO Collector cut-off current VCB=200V; IE=0 0.1 mA ICEO Collector cut-off current VCE=200V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 5 mA hFE DC current gain IC=10A ; VCE=3V Transition frequency IC=1.5A ; VCE=10V fT CONDITIONS MIN TYP. MAX 200 UNIT V 1500 30000 20 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=10A;RL=3Ω IB1=IB2=30mA;VBB2=4V 2 2 μs 12 μs 5 μs Inchange Semiconductor Product Specification 2SD2196 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3