ISC 2SC4584

Inchange Semiconductor
Product Specification
2SC4584
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High voltage,high speed
·Switching power transistor
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1200
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
6
A
ICM
Collector current-peak
12
A
IB
Base current
3
A
IBM
Base current-peak
6
A
PC
Collector power dissipation
65
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
1.92
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2SC4584
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
MAX
UNIT
IC=3A;IB=0.6 A
1.0
V
Base-emitter saturation voltage
IC=3A;IB=0.6 A
1.5
V
Collector-emitter sustaining voltage
IC=0.2A;IB=0
IEBO
Emitter cut-off current
At rated voltage
0.1
mA
ICBO
Collector cut-off current
At rated voltage
0.1
mA
VCEO(SUS)
CONDITIONS
MIN
800
ICEO
Collector cut-off current
hFE-1
DC current gain
IC=3 A ; VCE=5V
8
hFE-2
DC current gain
IC=1mA ; VCE=5V
7
Transition frequency
IC=0.6A ; VCE=10V
fT
TYP.
V
8
MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=3A;RL=85Ω
IB1=0.6A; IB2=1.2A
VBB2=4V
Fall time
2
0.5
μs
3.5
μs
0.3
μs
Inchange Semiconductor
Product Specification
2SC4584
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3