Inchange Semiconductor Product Specification 2SC4584 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 3 A IBM Base current-peak 6 A PC Collector power dissipation 65 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 1.92 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SC4584 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=3A;IB=0.6 A 1.0 V Base-emitter saturation voltage IC=3A;IB=0.6 A 1.5 V Collector-emitter sustaining voltage IC=0.2A;IB=0 IEBO Emitter cut-off current At rated voltage 0.1 mA ICBO Collector cut-off current At rated voltage 0.1 mA VCEO(SUS) CONDITIONS MIN 800 ICEO Collector cut-off current hFE-1 DC current gain IC=3 A ; VCE=5V 8 hFE-2 DC current gain IC=1mA ; VCE=5V 7 Transition frequency IC=0.6A ; VCE=10V fT TYP. V 8 MHz Switching times ton Turn-on time tstg Storage time tf IC=3A;RL=85Ω IB1=0.6A; IB2=1.2A VBB2=4V Fall time 2 0.5 μs 3.5 μs 0.3 μs Inchange Semiconductor Product Specification 2SC4584 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3