Inchange Semiconductor Product Specification 2SC4941 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・Switching power transistor ・High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 6 A ICM Collector current-Peak 12 A IB Base current 3 A IB Base current-Peak 6 A PT Total power dissipation 65 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VALUE UNIT 1.92 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2SC4941 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 800 V VCBO Collector-base voltage IC=1mA ;IE=0 1500 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A 0.5 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=1200V; IE=0 100 μA ICEO Collector cut-off current VCE=RatedVCEO; IB=0 100 μA IEBO Emitter cut-off current VEB=RatedVEBO; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=1mA ; VCE=5V 7 Transition frequency IC=0.6A ; VCE=10V fT CONDITIONS MIN TYP. MAX 8 UNIT MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=3A IB1=0.6A; IB2=-1.2A VBB2=4V RL=85Ω 2 0.5 μs 3.5 μs 0.3 μs Inchange Semiconductor Product Specification 2SC4941 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3