RENESAS 2SC5337-T1-AZ

Preliminary Data Sheet
2SC5337
R09DS0047EJ0300
Rev.3.00
Sep 14, 2012
NPN Silicon RF Transistor for High-Frequency
Low Distortion Amplifier 4-Pin Power Minimold
FEATURES
• Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
• Low noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC4536
<R>
ORDERING INFORMATION
Part Number
2SC5337
Order Number
2SC5337-AZ
2SC5337-T1
2SC5337-T1-AZ
Package
4-pin power
minimold
(Pb-Free)
Note
Quantity
Supplying Form
25 pcs (Non reel)
• Magazine case
1 kpcs/reel
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Note Contains Lead in the part except the electrode terminals.
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
15
V
Emitter to Base Voltage
VEBO
3.0
V
IC
250
mA
2.0
W
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
2
Note Mounted on 16 cm × 0.7 mm (t) ceramic substrate (Copper plating)
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 1 of 5
2SC5337
<R>
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 20 V, IE = 0
–
0.01
5.0
μA
Emitter Cut-off Current
IEBO
VBE = 2 V, IC = 0
–
0.03
5.0
μA
VCE = 10 V, IC = 50 mA
60
120
200
–
VCE = 10 V, IC = 50 mA, f = 1 GHz
7.0
8.3
–
dB
DC Current Gain
hFE
Note 1
RF Characteristics
⏐S21e⏐
2
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
NF
Note 2
VCE = 10 V, IC = 50 mA, f = 500 MHz
–
1.5
3.5
dB
NF
Note 2
VCE = 10 V, IC = 50 mA, f = 1 GHz
–
2.0
3.5
dB
–
59.0
–
dB
–
82.0
–
dB
2nd Order Intermoduration Distortion
IM2
3rd Order Intermoduration Distortion
IM3
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
Vin = 105 dBμV/75 Ω, f1 = 190 MHz,
f2 = 90 MHz, f = f1 − f2
VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
Vin = 105 dBμV/75 Ω, f1 = 190 MHz,
f2 = 200 MHz, f = 2 × f1 − f2
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. RS = RL = 50 Ω, tuned
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hFE CLASSIFICATION
Rank
QR/YQR
QS/YQS
Marking
QR
QS
hFE Value
60 to 120
100 to 200
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 2 of 5
2SC5337
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Mounted on Ceramic Substrate
(16 cm2 × 0.7 mm (t) )
2.0
1.0
0
50
100
Reverse Transfer Capacitance Cre (pF)
Total Power Dissipation Ptot (W)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
f = 1 MHz
3.0
2.0
1.0
0.5
0.3
150
1
3
5
10
20
Ambient Temperature TA (˚C)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 10 V
0.5 mA
DC Current Gain hFE
0.4 mA
80
0.3 mA
60
40
0.2 mA
20
0.1 mA
0
30
300
IB = 0.6 mA
100
Collector Current IC (mA)
5.0
10
100
50
10
0.1
20
1
10
100
1 000
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
5
3
2
1
0.5
VCE = 10 V
f = 1 GHz
0.3
10
30
50 70 100
Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB)
Gain Bandwidth Product fT (GHz)
10
VCE = 10 V
f = 1 GHz
10
5
0
10
30
50 70 100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 3 of 5
2SC5337
NOISE FIGURE vs.
COLLECTOR CURRENT
7
VCE = 10 V
IC = 50 mA
VCE = 10 V
f = 1 GHz
6
|S21e|2
Noise Figure NF (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
20
MAG
10
5
4
3
2
1
0
0.2
0.4
0.6 0.8 1.0 1.4
2.0
0
5
3rd Order Intermodulation Distortion IM3 (dB)
2nd Order Intermodulation Distortion (+) IM2+ (dB)
2nd Order Intermodulation Distortion (–) IM2– (dB)
Frequency f (GHz)
10
20
50
100
Collector Current IC (mA)
IM3, IM2+, IM2– vs.
COLLECTOR CURRENT
80
VCE = 10 V
IM3
70
60
IM2+
IM2–
50
40
30
IM3 : Vin = 110 dBμV/75 Ω 2 tone each
f = 2 × 190 – 200 MHz
IM2+ : Vin = 105 dBμV/75 Ω 2 tone each
f = 90 + 100 MHz
IM2– : Vin = 105 dBμ V/75 Ω 2 tone each
f = 190 – 90 MHz
10
50
100
300
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
<R>
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 4 of 5
2SC5337
PACKAGE DIMENSIONS
4-PIN POWER MINIMOLD (UNIT: mm)
4.5±0.1
2.1
1.6
0.8
0.85
E
B
2.45±0.1
C
E
0.1
0.8 MIN.
1.55
3.95±0.25
0.3
1.5±0.1
0.46
±0.06
0.42±0.06
0.25±0.02
0.42±0.06
1.5
3.0
PIN CONNECTIONS
E : Emitter
C: Collector
B : Base
R09DS0047EJ0300 Rev.3.00
Sep 14, 2012
Page 5 of 5
Revision History
2SC5337 Data Sheet
Description
Rev.
Date
Page
Summary
1.00
Mar 01, 1996
–
First edition issued
2.00
Aug 28, 2001
–
Second edition issued
2.10
Sep 06, 2001
–
Second V1 edition issued
3.00
Sep 14, 2012
Throughout
The company name is changed to Renesas Electronics Corporation.
p.1
Modification of ORDERING INFORMATION
p.2
Modification of ELECTRICAL CHARACTERISTICS
p.2
Modification of hFE CLASSIFICATION
p.4
Modification of method for obtaining S-parameters
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