Preliminary Data Sheet 2SC5337 R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536 <R> ORDERING INFORMATION Part Number 2SC5337 Order Number 2SC5337-AZ 2SC5337-T1 2SC5337-T1-AZ Package 4-pin power minimold (Pb-Free) Note Quantity Supplying Form 25 pcs (Non reel) • Magazine case 1 kpcs/reel • 12 mm wide embossed taping • Collector face the perforation side of the tape Note Contains Lead in the part except the electrode terminals. Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 3.0 V IC 250 mA 2.0 W Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C 2 Note Mounted on 16 cm × 0.7 mm (t) ceramic substrate (Copper plating) CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 Page 1 of 5 2SC5337 <R> ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 20 V, IE = 0 – 0.01 5.0 μA Emitter Cut-off Current IEBO VBE = 2 V, IC = 0 – 0.03 5.0 μA VCE = 10 V, IC = 50 mA 60 120 200 – VCE = 10 V, IC = 50 mA, f = 1 GHz 7.0 8.3 – dB DC Current Gain hFE Note 1 RF Characteristics ⏐S21e⏐ 2 Insertion Power Gain Noise Figure (1) Noise Figure (2) NF Note 2 VCE = 10 V, IC = 50 mA, f = 500 MHz – 1.5 3.5 dB NF Note 2 VCE = 10 V, IC = 50 mA, f = 1 GHz – 2.0 3.5 dB – 59.0 – dB – 82.0 – dB 2nd Order Intermoduration Distortion IM2 3rd Order Intermoduration Distortion IM3 VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω, Vin = 105 dBμV/75 Ω, f1 = 190 MHz, f2 = 90 MHz, f = f1 − f2 VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω, Vin = 105 dBμV/75 Ω, f1 = 190 MHz, f2 = 200 MHz, f = 2 × f1 − f2 Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. RS = RL = 50 Ω, tuned <R> hFE CLASSIFICATION Rank QR/YQR QS/YQS Marking QR QS hFE Value 60 to 120 100 to 200 R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 Page 2 of 5 2SC5337 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Mounted on Ceramic Substrate (16 cm2 × 0.7 mm (t) ) 2.0 1.0 0 50 100 Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (W) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE f = 1 MHz 3.0 2.0 1.0 0.5 0.3 150 1 3 5 10 20 Ambient Temperature TA (˚C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 10 V 0.5 mA DC Current Gain hFE 0.4 mA 80 0.3 mA 60 40 0.2 mA 20 0.1 mA 0 30 300 IB = 0.6 mA 100 Collector Current IC (mA) 5.0 10 100 50 10 0.1 20 1 10 100 1 000 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. COLLECTOR CURRENT 5 3 2 1 0.5 VCE = 10 V f = 1 GHz 0.3 10 30 50 70 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Gain Bandwidth Product fT (GHz) 10 VCE = 10 V f = 1 GHz 10 5 0 10 30 50 70 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 Page 3 of 5 2SC5337 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 10 V IC = 50 mA VCE = 10 V f = 1 GHz 6 |S21e|2 Noise Figure NF (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) INSERTION POWER GAIN, MAG vs. FREQUENCY 20 MAG 10 5 4 3 2 1 0 0.2 0.4 0.6 0.8 1.0 1.4 2.0 0 5 3rd Order Intermodulation Distortion IM3 (dB) 2nd Order Intermodulation Distortion (+) IM2+ (dB) 2nd Order Intermodulation Distortion (–) IM2– (dB) Frequency f (GHz) 10 20 50 100 Collector Current IC (mA) IM3, IM2+, IM2– vs. COLLECTOR CURRENT 80 VCE = 10 V IM3 70 60 IM2+ IM2– 50 40 30 IM3 : Vin = 110 dBμV/75 Ω 2 tone each f = 2 × 190 – 200 MHz IM2+ : Vin = 105 dBμV/75 Ω 2 tone each f = 90 + 100 MHz IM2– : Vin = 105 dBμ V/75 Ω 2 tone each f = 190 – 90 MHz 10 50 100 300 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. <R> S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] URL http://www.renesas.com/products/microwave/ R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 Page 4 of 5 2SC5337 PACKAGE DIMENSIONS 4-PIN POWER MINIMOLD (UNIT: mm) 4.5±0.1 2.1 1.6 0.8 0.85 E B 2.45±0.1 C E 0.1 0.8 MIN. 1.55 3.95±0.25 0.3 1.5±0.1 0.46 ±0.06 0.42±0.06 0.25±0.02 0.42±0.06 1.5 3.0 PIN CONNECTIONS E : Emitter C: Collector B : Base R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 Page 5 of 5 Revision History 2SC5337 Data Sheet Description Rev. Date Page Summary 1.00 Mar 01, 1996 – First edition issued 2.00 Aug 28, 2001 – Second edition issued 2.10 Sep 06, 2001 – Second V1 edition issued 3.00 Sep 14, 2012 Throughout The company name is changed to Renesas Electronics Corporation. p.1 Modification of ORDERING INFORMATION p.2 Modification of ELECTRICAL CHARACTERISTICS p.2 Modification of hFE CLASSIFICATION p.4 Modification of method for obtaining S-parameters All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. California Eastern Laboratories, Inc. 4590 Patrick Henry Drive, Santa Clara, California 95054, U.S.A. Tel: +1-408-919-2500, Fax: +1-408-988-0279 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2012 Renesas Electronics Corporation. All rights reserved. [Colophon 2.2]