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Preliminary NE662M04 / 2SC5508 JEITA Part No. Data Sheet NPN SILICON RF TRANSISTOR R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • • • • • <R> Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number Order Number Quantity Package Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) NE662M04 2SC5508 NE662M04-A 2SC5508-A 50 pcs (Non reel) NE662M04-T2 2SC5508-T2 NE662M04-T2-A 2SC5508-T2-A 3 kpcs/reel NE662M04-T2B NE662M04-T2B-A 2SC5508-T2B 2SC5508-T2B-A Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape 15 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TC = 25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PtotNote Tj Tstg Ratings 15 3.3 1.5 35 115 150 −65 to +150 Unit V V V mA mW °C °C Note Free air. THERMAL RESISTANCE Parameter Junction to Case Resistance Junction to Ambient Resistance Symbol Rth j-c Rth j-a Ratings 150 650 Unit °C /W °C /W CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 1 of 8 A Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 Chapter Title ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Symbol ICBO IEBO hFENote 1 fT |S21e|2 NF Conditions MIN. TYP. MAX. Unit VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 5 mA – – 50 – – 70 200 200 100 nA nA – VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 2 V, IC = 20 mA, f = 2 GHz 20 14 25 17 – – GHz dB – 1.1 1.5 dB – – – – 0.18 19 20 11 0.24 – – – pF dB dB dBm – 22 – dBm Reverse Transfer Capacitance Maximum Available Power Gain Maximum Stable Power Gain Cre Note 2 MAG Note 3 MSG Note 4 Gain 1 dB Compression Output Power PO (1 dB) VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt VCB = 2 V, IE = 0, f = 1 MHz VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 2 V, IC = 20 mA Note 5, f = 2 GHz 3rd Order Intermodulation Distortion Output Intercept Point OIP3 VCE = 2 V, IC = 20 mA Note 5, f = 2 GHz Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = S21 (K – √ (K2 – 1) ) S12 4. MSG = S21 S12 5. Collector current when PO (1 dB) is output hFE CLASSIFICATION Rank FB/YFB Marking hFE Value T79 50 to 100 R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 2 of 8 A Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Thermal/DC Characteristics TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE, CASE TEMPERATURE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 Ptot-TA: Free air Ptot-TA: Mounted on ceramic board (15 mm × 15 mm, t = 0.6 mm) Ptot-TC: When case temperature is specified 200 Collector Current IC (mA) Total Power Dissipation Ptot (mW) 250 150 100 50 0 0 25 50 75 100 125 VCE = 2 V 40 30 20 10 0 150 0.2 0.4 0.6 0.8 1.0 Ambient Temperature TA (˚C), Case Temperature TC (˚C) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 1.2 200 50 VCE = 2 V 40 500 μ A 450 μ A 400 μ A 350 μ A 300 μ A 250 μ A 200 μ A 150 μ A 100 μ A IB = 50 μA 30 20 10 0 DC Current Gain hFE Collector Current IC (mA) 100 0 1 2 3 4 10 1 0.001 5 0.01 Collector to Emitter Voltage VCE (V) 0.1 1 10 100 Collector Current IC (mA) Capacitance/fT Characteristics GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 0.50 f = 1 MHz Gain Bandwidth Product fT (GHz) Reverse Transfer Capacitance Cre (pF) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.40 0.30 0.20 0.10 0 0 1.0 2.0 3.0 4.0 5.0 Collector to Base Voltage VCB (V) VCE = 3 V f = 2 GHz 25 20 15 10 5 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 3 of 8 A Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 Cha Gain Characteristics Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 VCE = 2 V IC = 20 mA 35 MSG 30 25 MAG |S21e|2 20 15 10 5 0 0.1 1.0 10.0 Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) 30 25 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT f = 1 GHz VCE = 2 V MSG 20 |S21e|2 15 10 5 0 1 10 30 25 f = 2 GHz VCE = 2 V MAG 20 MSG |S21e|2 15 10 100 5 0 1 10 Collector Current IC (mA) 100 Collector Current IC (mA) Output Characteristics OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 20 20 125 Pout 10 75 5 50 IC 0 25 0 –15 –10 –5 0 5 Input Power Pin (dBm) Output Power Pout (dBm) 100 Collector Current IC (mA) Output Power Pout (dBm) 15 –5 –20 125 f = 2 GHz VCE = 2 V f = 1 GHz VCE = 2 V Pout 15 100 10 75 5 50 IC 0 –5 –20 25 –15 –10 –5 0 Collector Current IC (mA) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 0 5 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 4 of 8 A Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 Noise Characteristics Ga 6 25 5 4 20 3 15 2 10 NF 0 1 10 15 2 1 0 100 0 5 1 Ga 3 6 25 5 20 15 2 NF 1 0 30 1 10 10 Noise Figure NF (dB) 4 0 100 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT Associated Gain Ga (dB) Noise Figure NF (dB) 5 10 NF Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT f = 2.0 GHz VCE = 2 V 20 3 Collector Current IC (mA) 6 25 Ga 4 5 1 30 f = 1.5 GHz VCE = 2 V 4 30 25 20 Ga 3 15 2 5 1 0 100 0 Collector Current IC (mA) f = 2.5 GHz VCE = 2 V NF 10 Associated Gain Ga (dB) Noise Figure NF (dB) 5 30 Noise Figure NF (dB) f = 1.0 GHz VCE = 2 V Associated Gain Ga (dB) 6 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT Associated Gain Ga (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 1 10 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. <R> S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] URL http://www.renesas.com/products/microwave/ R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 5 of 8 A Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 Cha EQUAL NF CIRCLE VCE = 2 V IC = 5 mA f = 1 GHz VCE = 2 V IC = 5 mA f = 2 GHz Unstable area Unstable area NFmin = 1.0 dB Γopt NFmin = 1.1 dB Γopt 1.5 dB 1.5 dB 2.0 3.0 dB 2.5 dB dB 4.0 d3.5 dB B R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 2.0 3.0 dB 2.5 dB dB 3.5 4.0 dBdB Page 6 of 8 A Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 NOISE PARAMETERS VCE = 2 V, IC = 3 mA VCE = 2 V, IC = 5 mA Γopt f (GHz) NFmin (dB) Ga (dB) MAG. ANG. 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 0.78 0.80 0.82 0.93 1.00 1.02 1.04 1.15 21.4 20.7 20.0 17.0 15.6 15.2 14.8 13.5 0.26 0.26 0.26 0.23 0.20 0.19 0.19 0.20 31.7 32.7 34.7 57.0 78.0 86.0 94.2 138.3 Γopt Rn/50 f (GHz) NFmin (dB) Ga (dB) MAG. ANG. 0.17 0.17 0.17 0.16 0.14 0.14 0.13 0.10 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 0.93 0.94 0.96 1.03 1.07 1.09 1.10 1.17 22.5 21.8 21.1 18.1 16.7 16.3 15.9 14.3 0.12 0.12 0.12 0.09 0.08 0.08 0.08 0.14 28.1 28.8 31.7 71.1 106.2 118.5 130.5 –179.7 VCE = 2 V, IC = 10 mA Rn/50 0.15 0.15 0.15 0.14 0.13 0.13 0.12 0.11 VCE = 2 V, IC = 20 mA Γopt f (GHz) NFmin (dB) Ga (dB) MAG. 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 1.28 1.29 1.30 1.37 1.41 1.43 1.44 1.51 23.7 23.0 22.3 19.3 17.8 17.3 16.9 15.3 0.07 0.07 0.08 0.13 0.16 0.17 0.19 0.25 R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 ANG. –159.4 –157.5 –155.7 –149.2 –146.1 –145.0 –143.9 –136.7 Rn/50 f (GHz) NFmin (dB) Ga (dB) 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 1.59 1.61 1.63 1.72 1.78 1.79 1.81 1.90 24.5 23.7 23.0 19.9 18.3 17.9 17.5 15.8 Γopt MAG. 0.26 0.26 0.27 0.30 0.33 0.34 0.35 0.40 ANG. –158.1 –155.5 –153.1 –142.6 –137.3 –135.7 –134.1 –126.5 Rn/50 0.12 0.13 0.13 0.14 0.15 0.06 0.16 0.18 Page 7 of 8 A Business Partner of Renesas Electronics Corporation. NE662M04 / 2SC5508 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm) (Top View) (Bottom View) 0.65 1.30 3 0.30+0.1 –0.05 0.30+0.1 –0.05 4 1 (1.05) 0.65 0.60 0.65 T79 1.25 2 1.25±0.1 0.30+0.1 –0.05 0.40+0.1 –0.05 2.05±0.1 2.0±0.1 0.11+0.1 –0.05 0.5 0.59±0.05 <R> PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 Page 8 of 8 NE662M04 / 2SC5508 Data Sheet Revision History Rev. Date Page 1.00 2.00 Sep 9, 2004 Mar 5, 2013 − Throughout p.1 p.5 p.8 Description Summary First edition issued Renesas format is applied to this data sheet. ORDERING INFORMATION is modified. Up to date S-PARAMETERS. Added a drawing backside to PACKAGE DIMENSIONS. All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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