2SC5851 Silicon NPN Epitaxial ADE-208-1480 (Z) Rev.0 Feb. 2002 Features • High frequency amplifier Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5851 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC* 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +125 °C *Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 V IC = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 30 V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 V IE = 10 µA, IC = 0 Collector cutoff current ICBO 0.5 µA VCB = 20 V, IE = 0 Emitter cutoff current IEBO 0.5 µA VEB = 2 V, IC = 0 DC current transfer ratio hFE* 35 200 VCE = 12 V, IC = 2 mA Collector to emitter saturation voltage VCE(sat) 1.1 V IC = 10 mA, IB = 1 mA Base to emitter voltage VBE 0.75 V VCE = 12 V, IC = 2 mA Gain bandwidth product fT 230 MHz VCE = 12 V, IC = 2 mA Collector output capacitance Cob 1.6 pF VCB = 10 V, IE = 0, f = 1 MHz Noise figure NF 5.5 dB VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 100 Ω 1 Notes: 1. The 2SC5851 is grouped by hFE as follows. Grade A B C Mark FA FB FC hFE 35 to 75 60 to 120 100 to 200 Rev.0, Feb. 2002, page 2 of 8 2SC5851 Typical Output Characteristics 10 IC (mA) 100 50 *Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm) 0 50 100 Ambient Temperature 100 60 40 4 20 µA 2 Pulse test 0 150 4 IB = 0 12 16 20 VCE (V) DC Current Transfer Ratio vs. Collector Current 100 10 hFE VCE = 6 V 8 DC Current Transfer Ratio Collector Current IC (mA) 8 Collector to Emitter Voltage Ta (°C) Typical Transfer Characteristics 6 4 2 0 80 8 6 Collector Current Collector Power Dissipation PC* (mW) Maximum Collector Dissipation Curve 150 0.2 0.4 0.6 0.8 Base to Emitter Voltage VBE (V) 1.0 80 60 40 20 VCE = 6 V 0 0.1 0.3 1.0 Collector Current 3 10 30 IC (mA) Rev.0, Feb. 2002, page 3 of 8 2SC5851 Noise Figure vs. Collector Current Noise Figure vs. Collector Current VCE = 6 V Rg = 500 Ω f = 1.0 MHz VCE = 6 V Rg = 50 Ω f = 100 MHz 20 NF (dB) 4 24 3 Noise Figure Noise Figure NF (dB) 5 2 1 16 12 8 4 0 0.2 0.5 1.0 2 Collector Current 5 0 0.1 10 Noise Figure vs. Signal Source Resistance 1.0 2 5 10 IC (mA) 500 10 8 fT (MHz) VCE = 6 V IC = 1 mA f = 100 MHz Gain Bandwidth Product NF (dB) Noise Figure 0.5 Gain Bandwidth Product vs. Collector Current 12 6 4 2 0 10 0.2 Collector Current IC (mA) 20 50 100 200 500 1000 Signal Source Resistance Rg (Ω) Rev.0, Feb. 2002, page 4 of 8 VCE = 6 V 400 300 200 100 0 0.1 0.3 1.0 Collector Current 3 10 IC (mA) 30 2SC5851 Gain Bandwidth Product vs. Collector to Emitter Voltage IC = 1 mA 300 200 100 0 1 2 5 20 Percentage of Relative to IC = 1 mA (%) Collector to Emitter Voltage 20 Input/Output Admittance vs. Collector Current 500 VCE = 6 V f = 100 MHz gie goe bie 200 100 boe boe bie 50 gie 20 goe 10 0.1 500 0.2 0.5 1.0 2 Collector Current IC (mA) 5 IC = 1 mA f = 100 MHz goe boe 200 gie 100 bie bie boe goe gie 50 20 10 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) VCE (V) Percentage of Relative to VCE = 6 V (%) Gain Bandwidth Product fT (MHz) 400 Percentage of Relative to VCE = 6 V (%) Input/Output Admittance vs. Collector to Emitter Voltage Transfer Admittance vs. Collector to Emitter Voltage 500 IC = 1 mA f = 100 MHz 200 bre gfe 100 bfe gfe bfe bre 50 20 10 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V) Rev.0, Feb. 2002, page 5 of 8 2SC5851 Percentage of Relative to IC = 1 mA (%) Transfer Admittance vs. Collector Current 500 VCE = 6 V f = 100 MHz bfe 200 100 gfe bre bre 50 gfe 20 10 0.1 bfe 0.2 0.5 1.0 Collector Current Rev.0, Feb. 2002, page 6 of 8 2 IC (mA) 5 2SC5851 Package Dimensions As of July, 2001 0.1 0.3 +– 0.05 0.2 0.65 0.65 1.3 ± 0.2 0.9 ± 0.1 0.1 0.3 +– 0.05 + 0.1 0.16 – 0.06 0 – 0.1 0.425 1.25 ± 0.1 0.1 0.3 +– 0.05 2.1 ± 0.3 2.0 ± 0.2 0.425 Unit: mm Hitachi Code JEDEC JEITA Mass (reference value) CMPAK — Conforms 0.006 g Rev.0, Feb. 2002, page 7 of 8 2SC5851 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0, Feb. 2002, page 8 of 8