ETC 2SC5862B

2SC5862
Silicon NPN Epitaxial
ADE-208-1482 (Z)
Rev.0
Feb. 2002
Features
• Low frequency amplifier
Outline
SMPAK
3
1
2
1. Emitter
2. Base
3. Collector
2SC5862
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
40
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
100
mA
Emitter current
IE
–100
mA
Collector power dissipation
PC*
130
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
50


V
IC = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO
40


V
IC = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
5


V
IE = 10 µA, IC = 0
Collector cutoff current
ICBO


0.5
µA
VCB = 30 V, IE = 0
Emitter cutoff current
IEBO


0.5
µA
VEB = 2 V, IC = 0
DC current transfer ratio
hFE*
100

500

VCE = 12 V, IC = 2 mA
Collector to emitter saturation
voltage
VCE(sat)


0.2
V
IC = 10 mA, IB = 1 mA
Base to emitter voltage
VBE


0.75
V
VCE = 12 V, IC = 2 mA
1
Notes: 1. The 2SC5862 is grouped by hFE as follows.
Grade
B
C
D
Mark
LB
LC
LD
hFE
100 to 200
160 to 320
250 to 500
Rev.0, Feb. 2002, page 2 of 6
2SC5862
Typical Output Characteristics
PC* (mW)
Collector Power Dissipation
Maximum Collector Dissipation Curve
150
100
10
IC (mA)
60
50
8
40
Collector Current
6
50
* Value on the glass epoxy board
(10 mm x 10 mm x 0.7 mm)
0
50
100
Ambient Temperature
150
2
1
VBE (V)
1.0
20
25
VCE (V)
DC Current Transfer Ratio vs.
Collector Current
VCE = 12 V
Pulse test
hFE
DC Current Transfer Ratio
IC
(mA)
4
IB = 0
5
10
15
Collector to Emitter Voltage
300
VCE = 12 V
0.8
10 µA
2
Ta (°C)
3
Collector Current
20
0
5
0.2
0.4
0.6
Base to Emitter Voltage
4
Pulse test
Typical Transfer Characteristics
0
30
200
Ta =
75°
C
25
100
0
0.03
0.1 0.3
1.0
Collector Current
3
10
IC (mA)
30
Rev.0, Feb. 2002, page 3 of 6
2SC5862
Collector Output Capacitance vs.
Collector to Base Voltage
VCE = 12
IC = 2 mA
0.8
Collector Output Capacitance
Base to Emitter Voltage
VBE (V)
0.9
Cob (pF)
Base to Emitter Voltage vs.
Ambient Temperature
0.7
0.6
0.5
0.4
–20
0
20
40
60
Ambient Temperature
5
IE = 0
f = 1 MHz
4
3
2
1
0
80
Ta (°C)
4
8
12
Collector to Base Voltage
Emitter Input Capacitance
Cib (pF)
Emitter Input Capacitance vs.
Emitter to Base Voltage
5
IC = 0
f = 1 MHz
4
3
2
1
0
2
4
6
Emitter to Base Voltage
Rev.0, Feb. 2002, page 4 of 6
8
VEB (V)
10
16
20
VCB (V)
2SC5862
Package Dimensions
As of July, 2001
Unit: mm
1.6 ± 0.2
+0.1
0.3 –0.05
+0.1
+0.1
1.6 ± 0.2
0.4 0.8 ± 0.1 0.4
0.15 –0.05
0 − 0.1
+0.1
0.2 –0.05
0.15
0.5 0.5
1.0 ± 0.1
0.7 ± 0.1
0.2 –0.05
Hitachi Code
JEDEC
JEITA
Mass (reference value)
SMPAK

Conforms
0.003 g
Rev.0, Feb. 2002, page 5 of 6
2SC5862
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, Feb. 2002, page 6 of 6