2SC5862 Silicon NPN Epitaxial ADE-208-1482 (Z) Rev.0 Feb. 2002 Features • Low frequency amplifier Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5862 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Emitter current IE –100 mA Collector power dissipation PC* 130 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C *Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 50 V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 40 V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 V IE = 10 µA, IC = 0 Collector cutoff current ICBO 0.5 µA VCB = 30 V, IE = 0 Emitter cutoff current IEBO 0.5 µA VEB = 2 V, IC = 0 DC current transfer ratio hFE* 100 500 VCE = 12 V, IC = 2 mA Collector to emitter saturation voltage VCE(sat) 0.2 V IC = 10 mA, IB = 1 mA Base to emitter voltage VBE 0.75 V VCE = 12 V, IC = 2 mA 1 Notes: 1. The 2SC5862 is grouped by hFE as follows. Grade B C D Mark LB LC LD hFE 100 to 200 160 to 320 250 to 500 Rev.0, Feb. 2002, page 2 of 6 2SC5862 Typical Output Characteristics PC* (mW) Collector Power Dissipation Maximum Collector Dissipation Curve 150 100 10 IC (mA) 60 50 8 40 Collector Current 6 50 * Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm) 0 50 100 Ambient Temperature 150 2 1 VBE (V) 1.0 20 25 VCE (V) DC Current Transfer Ratio vs. Collector Current VCE = 12 V Pulse test hFE DC Current Transfer Ratio IC (mA) 4 IB = 0 5 10 15 Collector to Emitter Voltage 300 VCE = 12 V 0.8 10 µA 2 Ta (°C) 3 Collector Current 20 0 5 0.2 0.4 0.6 Base to Emitter Voltage 4 Pulse test Typical Transfer Characteristics 0 30 200 Ta = 75° C 25 100 0 0.03 0.1 0.3 1.0 Collector Current 3 10 IC (mA) 30 Rev.0, Feb. 2002, page 3 of 6 2SC5862 Collector Output Capacitance vs. Collector to Base Voltage VCE = 12 IC = 2 mA 0.8 Collector Output Capacitance Base to Emitter Voltage VBE (V) 0.9 Cob (pF) Base to Emitter Voltage vs. Ambient Temperature 0.7 0.6 0.5 0.4 –20 0 20 40 60 Ambient Temperature 5 IE = 0 f = 1 MHz 4 3 2 1 0 80 Ta (°C) 4 8 12 Collector to Base Voltage Emitter Input Capacitance Cib (pF) Emitter Input Capacitance vs. Emitter to Base Voltage 5 IC = 0 f = 1 MHz 4 3 2 1 0 2 4 6 Emitter to Base Voltage Rev.0, Feb. 2002, page 4 of 6 8 VEB (V) 10 16 20 VCB (V) 2SC5862 Package Dimensions As of July, 2001 Unit: mm 1.6 ± 0.2 +0.1 0.3 –0.05 +0.1 +0.1 1.6 ± 0.2 0.4 0.8 ± 0.1 0.4 0.15 –0.05 0 − 0.1 +0.1 0.2 –0.05 0.15 0.5 0.5 1.0 ± 0.1 0.7 ± 0.1 0.2 –0.05 Hitachi Code JEDEC JEITA Mass (reference value) SMPAK Conforms 0.003 g Rev.0, Feb. 2002, page 5 of 6 2SC5862 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0, Feb. 2002, page 6 of 6