HITACHI 2SC5812

2SC5812
Silicon NPN Epitaxial
VHF/UHF wide band amplifier
ADE-208-1468(Z)
Rev.0
Nov. 2001
Features
• High power gain, Low noise figure at low power operation:
2
|S21| = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)
Outline
MFPAK
3
1
2
Note: Marking is “WG–“.
1. Emitter
2. Base
3. Collector
2SC5812
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
4
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
50
mA
Collector power dissipation
PC
80
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
15


V
IC = 10 µA, IE = 0
Collector cutoff current
ICBO


0.1
µA
VCB = 15 V, IE = 0
Collector cutoff current
ICEO


1
µA
VCE = 4 V, RBE = Infinite
Emitter cutoff current
IEBO


0.1
µA
VEB = 0.8 V, IC = 0
DC current transfer ratio
hFE
100
120
150

VCE = 1 V, IC = 5 mA
Reverse transfer capacitance
Cre

0.2

pF
VCE = 1 V, Emitter ground,
f = 1 MHz
Collector output capacitance
Cob

0.4
0.7
pF
VCB = 1 V, IE = 0,
f = 1 MHz
Gain bandwidth product
fT(1)
8
11

GHz
VCE = 1V, IC = 5 mA
Gain bandwidth product
fT(2)

15

GHz
VCE = 1V, IC = 20 mA
2
Forward transmission
coefficient
|S21|
14
17

dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz
Noise figure
NF

1.0
1.7
dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz,
ΓS = ΓL = 50 Ω
Rev.0, Nov. 2001, page 2 of 10
2SC5812
Collector Power Dissipation Curve
Collector Current IC (mA)
60
40
20
0
50
100
150
200
250
100 µA
80 µA
10
60 µA
40 µA
5
IB = 20 µA
0
1
3
4
DC Current Transfer Ratio vs.
Collector Current
25
200
20
15
10
5
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
VCE = 1 V
hFE
VCE = 1 V
DC Current Transfer Ratio
IC (mA)
2
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
Collector Current
140 µA
120 µA
15
Ambient Temperature Ta (˚C)
0
160 µA
180 µ
Collector Power Dissipation PC (mW)
80
A
Typical Output Characteristics
20
100
100
0
0.1
1.0
10
Collector Current IC (mA)
100
Rev.0, Nov. 2001, page 3 of 10
Collector Output Capacitance vs.
Collector to Base Voltage
1.0
IE = 0
f = 1 MHz
0.8
0.6
0.4
0.2
0
0.5
1.0
1.5
2.0
2.5
|S21|2 (dB)
8
4
0
2
5
10
20
50
Collector Current IC (mA)
Rev.0, Nov. 2001, page 4 of 10
0.6
0.4
0.2
20
12
1
0.8
0.5
1.0
1.5
2.0
2.5
3.0
Collector to Base Voltage VCB (V)
VCE = 1 V
f = 1 GHz
16
Reverse Transfer Capacitance vs.
Collector to Base Voltage
Emitter ground
f = 1 MHz
VCB (V)
Gain Bandwidth Product vs.
Collector Current
20
1.0
0
3.0
S21 Parameter
fT (GHz)
Collector to Base Voltage
Gain Bandwidth Product
Reverse Transfer Capacitance Cre (pF)
Collector Output Capacitance Cob (pF)
2SC5812
100
S21 Parameter vs. Collector Current
16
12
8
4
0
1
VCE = 1 V
f = 900 MHz
2
5
10
20
50
Collector Current IC (mA)
100
2SC5812
Noise Figure vs. Collector Current
5
Noise Figure
NF (dB)
VCE = 1 V
f = 900 MHz
4
3
2
1
0
1
2
5
10 20
50
Collector Current IC (mA)
100
Rev.0, Nov. 2001, page 5 of 10
2SC5812
S11 Parameter vs. Frequency
.8
S21 Parameter vs. Frequency
1
Scale: 8 / div.
90°
1.5
.6
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
0°
180°
–10
–5
–4
–3
–.2
–30°
–150°
–.4
–2
–.6
–.8
–120°
–1.5
–60°
–1
–90°
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.04 / div.
.8
1
1.5
.6
60°
120°
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
–10
–5
–4
–3
–.2
–30°
–150°
–.4
–2
–120°
–60°
–90°
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
Rev.0, Nov. 2001, page 6 of 10
–.6
–.8
–1.5
–1
Test conditions: VCE = 1 V , ZO = 50 Ω
100 to 2000 MHz (100 MHz step)
(IC = 5 mA)
(IC = 20 mA)
2SC5812
S Parameter
(VCE = 1 V, IC = 5 mA, ZO = 50 Ω)
S11
S21
S12
S22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.842
–16.3
15.23
164.9
0.015
80.2
0.963
–10.1
200
0.783
–31.7
14.17
152.2
0.027
72.9
0.904
–18.4
300
0.719
–44.6
12.84
141.4
0.037
66.8
0.826
–24.9
400
0.637
–55.4
11.41
131.8
0.045
62.9
0.754
–29.4
500
0.582
–65.9
10.25
124.8
0.051
60.8
0.691
–32.9
600
0.531
–73.2
9.16
118.6
0.056
60.1
0.638
–35.0
700
0.472
–80.9
8.22
113.1
0.061
59.7
0.595
–36.7
800
0.443
–87.0
7.49
108.9
0.065
60.0
0.561
–37.7
900
0.404
–92.3
6.80
104.6
0.069
60.7
0.530
–38.5
1000
0.377
–99.2
6.26
101.0
0.073
61.5
0.508
–39.1
1100
0.355
–103.4
5.80
98.1
0.077
62.8
0.490
–39.7
1200
0.337
–108.0
5.38
94.8
0.081
64.1
0.474
–40.4
1300
0.327
–112.6
5.04
92.4
0.085
65.0
0.461
–40.8
1400
0.305
–116.3
4.71
90.1
0.090
66.4
0.452
–41.7
1500
0.299
–120.3
4.45
87.7
0.094
67.5
0.440
–42.0
1600
0.297
–123.8
4.20
86.0
0.099
68.5
0.437
–42.8
1700
0.284
–127.7
3.98
83.6
0.104
70.0
0.428
–43.4
1800
0.282
–132.2
3.80
81.7
0.109
71.1
0.423
–44.3
1900
0.272
–134.3
3.62
79.8
0.114
72.0
0.418
–45.3
2000
0.268
–138.4
3.47
77.9
0.120
73.0
0.414
–46.0
Rev.0, Nov. 2001, page 7 of 10
2SC5812
(VCE = 1 V, IC = 20 mA, ZO = 50 Ω)
S11
S21
S12
S22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
0.502
–40.3
36.64
147.5
0.013
76.3
0.824
–21.8
200
0.388
–66.7
27.85
127.8
0.021
70.3
0.653
–32.0
300
0.317
–84.6
21.13
116.2
0.027
69.3
0.531
–35.4
400
0.257
–99.2
16.75
108.5
0.034
72.2
0.460
–35.8
500
0.237
–109.6
13.87
103.5
0.040
73.6
0.416
–35.2
600
0.216
–115.5
11.77
99.5
0.047
75.0
0.387
–34.8
700
0.195
–125.0
10.19
96.1
0.054
75.6
0.367
–34.1
800
0.193
–129.2
9.00
93.5
0.060
76.3
0.352
–33.7
900
0.181
–135.9
8.03
90.8
0.068
77.1
0.340
–33.2
1000
0.179
–141.0
7.26
88.8
0.074
77.7
0.333
–33.3
1100
0.178
–142.4
6.66
86.8
0.081
78.1
0.326
–33.7
1200
0.176
–147.8
6.12
84.7
0.088
78.2
0.321
–34.0
1300
0.176
–150.0
5.68
83.2
0.094
78.4
0.317
–34.5
1400
0.166
–154.2
5.32
81.7
0.102
78.5
0.314
–35.1
1500
0.175
–158.0
4.97
80.0
0.109
78.6
0.311
–36.0
1600
0.172
–159.7
4.70
78.7
0.116
79.0
0.309
–36.8
1700
0.172
–162.4
4.43
77.0
0.123
78.9
0.307
–37.6
1800
0.179
–164.9
4.21
75.7
0.131
78.8
0.305
–38.6
1900
0.177
–166.8
4.01
74.3
0.138
78.7
0.304
–39.7
2000
0.183
–169.9
3.83
72.8
0.145
78.5
0.303
–40.8
Rev.0, Nov. 2001, page 8 of 10
2SC5812
Package Dimensions
As of July, 2001
0.15 +0.1
–0.05
(0.1)
3-0.2 +0.1
–0.05
0.45
0.45
(0.1)
0.2
0.8 ± 0.1
1.4 ± 0.05
0.9 ± 0.1
0.6 MAX
1.2 ± 0.05
0.2
Unit: mm
Hitachi Code
JEDEC
JEITA
Mass (reference value)
MFPAK
—
—
0.0016 g
Rev.0, Nov. 2001, page 9 of 10
2SC5812
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, Nov. 2001, page 10 of 10