HITACHI 2SC3380

2SC3380
Silicon NPN Triple Diffused
Application
• High frequency high voltage amplifier
• High voltage switch
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SC3380
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
300
V
Collector to emitter voltage
VCEO
300
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
100
mA
1
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
300
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V(BR)CEO
300
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
5
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CEO
—
—
1
µA
VCE = 250 V, RBE = ∞
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.5
V
I C = 20 mA, IB = 2 mA
DC current transfer ratio
hFE
30
—
200
Gain bandwidth product
fT
—
80
—
MHz
VCE = 20 V, IC = 20 mA
Collector output capacitance
Cob
—
—
4
pF
VCB = 20 V, IE = 0, f = 1 MHz
Note: Marking is “AS”.
2
VCE = 20 V, IC = 20 mA
2SC3380
Typical Output Characteristics
Maximum Collector Dissipation Curve
1.0
Collector Current IC (mA)
0.8
0.4
14
12
0.8
10
0.6
9
8
0.4
4
0.2
2 µA
IB = 0
0
100
150
50
Ambient Temperature Ta (°C)
0
100
VCE = 20 V
Ta = 25°C
30
20
10
DC Current Transfer Ratio hFE
50
40
0.4
0.8
1.2
1.6
2.0
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
Collector Current IC (mA)
Collector Power Dissipation PC (W)
(on the alumina ceramic board)
1.2
VCE = 20 V
10 V
30
Pulse
Ta = 25°C
10
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
1
3
10
30
Collector Current IC (mA)
100
3
Collector to Emitter Saturation
Voltage vs. Collector Current
Gain Bandwidth Product vs.
Collector Current
10
100
Gain Bandwidth Product fT (MHz)
Collector to Emitter Saturation Voltage VCE(sat) (V)
2SC3380
Pulse
IC = 10 IB
Ta = 25°C
3
1.0
0.3
0.1
1
3
10
30
Collector Current IC (mA)
100
80
Pulse
VCE = 20 V
60
40
20
0
0.5
1.0
2
5
10
20
Collector Current IC (mA)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
50
f = 1 MHz
IE = 0
20
10
5
2
1.0
0.5
1
4
50 100
2
5
10 20
Collector to Base Voltage VCB (V)
50
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.