2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Power Switching Applications Unit: mm Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VCBO 160 V VCEX 160 V VCEO 80 V VEBO 7 V DC IC 2 A JEDEC Pulse ICP 4 A JEITA SC-62 IB 0.5 A TOSHIBA 2-5K1A t = 10 s PC 2.5 (Note 1) 1.0 W Weight: 0.05 g (typ.) DC Tj 150 °C Tstg −55 to 150 °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range 1 : BASE 2 : COLLECTOR (HEAT SINK) 3 : EMITTER ⎯ 2 Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm ) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-10-19 2SC6124 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 160 V, IE = 0 ⎯ ⎯ 1 μA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 1 μA V (BR) CEO IC = 10 mA, IB = 0 80 ⎯ ⎯ V Collector-emitter breakdown voltage hFE (1) VCE = 2 V, IC = 1 mA 80 ⎯ ⎯ hFE (2) VCE = 2 V, IC = 0.5 A 100 ⎯ 200 hFE (3) VCE = 2 V, IC = 1 A 60 ⎯ ⎯ VCE (sat) (1) IC = 0.5 A, IB = 50 mA ⎯ ⎯ 0.30 V VCE (sat) (2) IC = 1 A, IB = 100 mA ⎯ ⎯ 0.50 V VBE (sat) IC = 1 A, IB = 100 mA ⎯ ⎯ 1.50 V fT VCE = 2 V, IC = 0.5A ⎯ 150 ⎯ MHz VCB = 10 V, IE = 0,f = 1MHZ ⎯ 14 ⎯ pF ⎯ 50 ⎯ ⎯ 400 ⎯ ⎯ 150 ⎯ DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Cob Rise time VCC tr 20 μs RL IB1 Storage time Switching time tstg Input 0 IB1 IB2 Output ns IB2 Fall time tf IB1 = IB2 = 100 mA Duty cycle ≤ 1% Marking Part No. (or abbreviation code) 4 Lot code J Note 3 Note 3: A line beside a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-10-19 2SC6124 IC – VCE 200 1000 100 50 1.6 Ta=100℃ hFE 20 IC (A) 2 hFE－IC DC current gain Collector current 1.2 10 0.8 IB=5mA 0.4 −55℃ 10 Common emitter Ta = 25°C Single Pulse test 0 0 1 2 3 4 Collector-emitter voltage VCE 25℃ 100 Common emitter VCE = 2 V Single Pulse test 1 0.001 5 (V) 0.01 Collector current VCE (sat) – IC 10 Common emitter IC/IB = 10 Single Pulse test Ta=100℃ 25℃ 0.1 −55℃ 0.01 0.001 0.001 0.1 1 Collector current IC 10 −55℃ 1 Ta=100℃ 25℃ 0.3 0.001 0.01 (A) fT (MHz) (A) IC Transition frequency Collector current 1.2 25℃ 0.8 0.4 −55℃ 0.4 0.8 IC 10 (A) 1.2 Base-emitter voltage 1.6 VBE Common emitter Ta = 25°C Single Pulse test 10 100 2 (V) 5 10 1 0.001 0 0 1 fT– IC 1000 Ta=100℃ 0.1 Collector current Common emitter VCE = 2 V Single Pulse test 1.6 (A) Common emitter IC/IB = 10 Single Pulse test IC – VBE 2 IC 10 3 0.1 0.01 1 VBE (sat) – IC Base -emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 1 0.1 VCE=2V 0.01 0.1 Collector current 3 1 IC 10 (A) 2009-10-19 2SC6124 rth－tw PC – Ta PC (W) 1.2 Collector power dissipation Transient thermal impedance rth(j-a) (℃/W) 1000 100 10 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 1 0.001 0.01 0.1 1 10 Pulse width tw 1 0.8 0.6 0.4 0.2 0 1000 100 (s) 150 200 Safe Operating Area 10 Ta=25℃ IE=0 f=1MHz 1 ms* 100μs* IC max. (pulsed)* 10μs* 10 ms* IC max. (continuous) 100 ms* 100 IC (A) 1 Collector current Collector output capacitance Cob (pF) 100 Ambient temperature Ta (°C) Cob－VCB 1000 50 0 10 DC operation Ta=25℃ 0.1 1 0.1 1 Collector-base voltage 10 VCB 100 0.01 (V) 0.001 *: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, and DC operation will be different when the devices aren’t mounted on an FR4 board (glass-epoxy, 1.6 mm thick, Cu area: 645 2 mm ). These characteristic curves must be derated linearly with increase in temperature. 0.1 1 Collector-emitter voltage 4 VCEO max 10 VCE 100 (V) 2009-10-19 2SC6124 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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