DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5220T 20 V, 2 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 20 V, 2 A PNP low VCEsat (BISS) transistor PBSS5220T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability: IC and ICM VCEO collector-emitter voltage −20 V IC collector current (DC) −2 A • Reduced printed-circuit board requirements ICM peak collector current −3 A • Cost effective alternative to MOSFETs in specific applications. RCEsat equivalent on-resistance 113 mΩ • Higher efficiency leading to less heat generation PARAMETER MAX. UNIT PINNING APPLICATIONS PIN • Power management DESCRIPTION 1 base – DC/DC converters 2 emitter – Supply line switching 3 collector – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs) handbook, halfpage 3 3 – Inductive load driver (e.g. relays, buzzers and motors). 1 DESCRIPTION 2 PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. 1 Top view 2 MAM256 MARKING MARKING CODE(1) TYPE NUMBER PBSS5230T Fig.1 Simplified outline (SOT23) and symbol. 3F* Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5220T 2003 Dec 18 − DESCRIPTION plastic surface mounted package; 3 leads 2 VERSION SOT23 Philips Semiconductors Product specification 20 V, 2 A PNP low VCEsat (BISS) transistor PBSS5220T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −20 V VCEO collector-emitter voltage open base − −20 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −2 A ICM peak collector current − −3 A IB base current (DC) − −300 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW Tamb ≤ 25 °C; note 2 − 480 mW single peak Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; note 1 417 K/W in free air; note 2 260 K/W Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. 2003 Dec 18 3 Philips Semiconductors Product specification 20 V, 2 A PNP low VCEsat (BISS) transistor PBSS5220T CHARACTERISTICS Tamb = 25 °C unless otherwise specified SYMBOL ICBO PARAMETER CONDITIONS collector-base cut-off current VCB = −20 V; IE = 0 MIN. TYP. MAX. − − −100 nA VCB = −20 V; IE = 0; Tj = 150 °C − − −50 µA nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 hFE DC current gain VCE = −2 V; IC = −100 mA 225 − − VCE = −2 V; IC = −500 mA 225 − − VCE = −2 V; IC = −1 A; note 1 200 − − VCEsat collector-emitter saturation voltage UNIT VCE = −2 V; IC = −2 A; note 1 150 − − IC = −500 mA; IB = −50 mA − − −80 mV IC = −1A; IB = −50 mA − − −150 mV IC = −2A; IB = −100 mA; note 1 − − −250 mV IC = −2A; IB = −200 mA; note 1 − − −225 mV RCEsat equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 − − 113 mΩ VBEsat base-emitter saturation voltage IC = −2 A; IB = −100 mA; note 1 − − −1.1 V VBEon base-emitter turn on voltage VCE = −2 V; IC = −1 A; note 1 −1.2 − − V fT transition frequency VCE = −5 V; IC = −100 mA; f = 100 MHz 100 − − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 50 pF Note 1. Pulse test: tp ≤ 300 µs, δ ≤ 0.02. 2003 Dec 18 4 Philips Semiconductors Product specification 20 V, 2 A PNP low VCEsat (BISS) transistor PBSS5220T PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2003 Dec 18 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 5 Philips Semiconductors Product specification 20 V, 2 A PNP low VCEsat (BISS) transistor PBSS5220T DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Dec 18 6 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/01/pp7 Date of release: 2003 Dec 18 Document order number: 9397 750 11902