DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability IC and ICM VCEO collector-emitter voltage −40 V IC collector current (DC) −1.8 A • High efficiency leading to reduced heat generation ICRP peak collector current −2 A • Reduced printed-circuit board area requirements. RCEsat equivalent on-resistance <250 mΩ • High collector current gain (hFE) at high IC PARAMETER MAX. UNIT PINNING APPLICATIONS • Power management: PIN DESCRIPTION – DC-DC converter 1 collector – Supply line switching 2 collector – Battery charger 3 base – LCD back lighting. 4 emitter 5 collector 6 collector • Peripheral driver: – Driver in low supply voltage applications (e.g. lamps, LEDs) – Inductive load drivers (e.g. relay, buzzers and motors). handbook, halfpage 6 5 4 1, 2, 5, 6 DESCRIPTION 3 PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN complement: PBSS4240V. 4 1 MARKING TYPE NUMBER PBSS5240V 2003 Jan 30 Top view MARKING CODE 2 3 MAM446 Fig.1 Simplified outline (SOT666) and symbol. 52 2 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) note 1 − −1.8 A ICRP peak repetitive collector current note 2 − −2 A ICM peak collector current − −3 A IB base current (DC) − −300 mA IBM peak base current − −1 A Ptot total power dissipation Tamb ≤ 25 °C; note 3 − 300 mW Tamb ≤ 25 °C; note 4 − 500 mW Tamb ≤ 25 °C; note 1 − 900 mW Tamb ≤ 25 °C; notes 2 and 3 − 1.2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Device mounted on a ceramic circuit board, Al2O3, standard footprint. 2. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint. 4. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT note 1 410 K/W note 2 215 K/W note 3 140 K/W notes 1 and 4 110 K/W Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 3. Device mounted on a ceramic circuit board, Al2O3, standard footprint. 4. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms. Soldering The only recommended soldering method is reflow soldering. 2003 Jan 30 3 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. VCB = −40 V; IE = 0 − − −100 nA VCB = −40 V; IE = 0; Tamb = 150 °C − − −50 µA VCE = −30 V; IB = 0 − − −100 nA nA ICEO collector-emitter cut-off current IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 hFE DC current gain VCE = −5 V; IC = −1 mA 300 − − VCE = −5 V; IC = −100 mA 300 − 800 VCE = −5 V; IC = −500 mA 250 − − VCE = −5 V; IC = −1 A 160 − − VCE = −5 V; IC = −2 A; note 1 50 − − VCEsat collector-emitter saturation voltage UNIT IC = −100 mA; IB = −1 mA − −80 −120 mV IC = −500 mA; IB = −50 mA − −100 −145 mV IC = −1 A; IB = −100 mA; note 1 − −180 −250 mV IC = −2 A; IB = −200 mA − −370 −530 mV RCEsat equivalent on-resistance IC = −1 A; IB = −100 mA; note 1 − 180 <250 mΩ VBEsat base-emitter saturation voltage IC = −1 A; IB = −100 mA − − −1.1 V VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A − − −1 V fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 150 − − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 12 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2003 Jan 30 4 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V MHC464 1000 MHC465 −1.2 handbook, halfpage handbook, halfpage hFE VBE (V) 800 (1) (1) −0.8 (2) 600 (3) (2) 400 −0.4 (3) 200 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) −1 VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MHC466 −103 handbook, halfpage −10 −102 −103 −104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MHC467 −1.2 handbook, halfpage VBEsat (V) VCEsat −1 (mV) −102 (1) −0.8 (1) (2) (2) −0.6 (3) −10 (3) −0.4 −1 −10−1 −1 −10 −102 −0.2 −10−1 −103 −104 IC (mA) −1 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2003 Jan 30 5 −10 −102 −103 −104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V MHC468 −1.2 MHC469 −2.4 IC (A) −2 handbook, halfpage handbook, halfpage IC (A) (4) (3) −0.8 (2) (1) (1) (2) (3) (4) (5) −1.6 (5) (6) (7) (8) (6) (7) −1.2 (9) (8) −0.4 −0.8 (9) (10) 0 −0.4 0 −0.8 −1.2 −0.4 0 −2 −1.4 VCE (V) (5) IB = −4.2 mA. (9) IB = −1.4 mA. (6) IB = −3.5 mA. (7) IB = −2.8 mA. (8) IB = −2.1 mA. (10) IB = −0.7 mA. (1) (2) (3) (4) Collector current as a function of collector-emitter voltage; typical values. RCEsat (Ω) 102 10 (1) (2) 1 (3) −1 −10 −102 −103 −104 IC (mA) IC/IB = 20. (1) Tamb = 150 °C. Fig.8 (2) Tamb = 25 °C. (3) Tamb = −55 °C. Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 Jan 30 IB = −50 mA. IB = −45 mA. IB = −40 mA. IB = −35 mA. Fig.7 MHC470 103 handbook, halfpage 10−1 −10−1 −0.8 −1.2 −1.6 −2 VCE (V) Tamb = 25 °C. IB = −7 mA. IB = −6.3 mA. IB = −5.6 mA. IB = −4.9 mA. Fig.6 −0.4 0 Tamb = 25 °C. (1) (2) (3) (4) (10) 6 (5) IB = −30 mA. (6) IB = −25 mA. (7) IB = −20 mA. (8) IB = −15 mA. (9) IB = −10 mA. (10) IB = −5 mA. Collector current as a function of collector-emitter voltage; typical values. Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2003 Jan 30 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Jan 30 8 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V NOTES 2003 Jan 30 9 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V NOTES 2003 Jan 30 10 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V NOTES 2003 Jan 30 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp12 Date of release: 2003 Jan 30 Document order number: 9397 750 10781