Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9±0.1 1.5 1.0 4.5±0.1 7 0. R 0.85 4.1±0.2 ● 2.4±0.2 2.0±0.2 3.5±0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 ● 1.0 1.5 R0.9 R0.9 0.4 ■ Features 2.5±0.1 ■ Absolute Maximum Ratings (Ta=25˚C) 3 Parameter Symbol Collector to 2SD1205 base voltage 2SD1205A Collector to 2SD1205 emitter voltage 2SD1205A Ratings 30 VCBO 25 VEBO Peak collector current V 50 2 1 Unit V 60 VCEO Emitter to base voltage 0.45±0.05 1.25±0.05 0.55±0.1 5 V ICP 750 mA Collector current IC 500 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2.5 1:Base 2:Collector 3:Emitter 2.5 EIAJ:SC–71 M Type Mold Package Internal Connection C B ≈200Ω ■ Electrical Characteristics Parameter E (Ta=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 25V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 4V, IC = 0 100 nA VCBO IC = 100µA, IE = 0 VCEO IC = 1mA, IB = 0 Collector to base 2SD1205 voltage 2SD1205A Collector to emitter 2SD1205 voltage 2SD1205A 30 V 60 25 V 50 Emitter to base voltage VEBO IE = 100µA, IC = 0 Forward current transfer ratio hFE*1 VCE = 10V, IC = 500mA*2 5 V Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 0.5mA*2 2.5 V Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 0.5mA*2 3 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 20000 4000 150 MHz *2 *1h FE Pulse measurement Rank classification Rank hFE Q R 4000 ~ 10000 8000 ~ 20000 1 Transistor 2SD1205, 2SD1205A PC — Ta VCE(sat) — IC 400 300 200 100 0 0 20 40 60 80 100 120 140 160 100 IC/IB=1000 30 10 3 25˚C –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 Collector output capacitance Cob (pF) Forward current transfer ratio hFE 3 10 Ta=75˚C –25˚C 103 102 IE=0 f=1MHz Ta=25˚C 7 6 5 4 3 2 1 0 0.1 0.3 1 3 10 1 3 10 30 IC/IB=1000 30 10 25˚C 3 Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 8 25˚C Collector current IC (A) 2 1 Cob — VCB VCE=10V 10 0.01 0.03 0.3 Collector current IC (A) hFE — IC 104 Ta=75˚C 1 Ambient temperature Ta (˚C) 105 VBE(sat) — IC 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) Collector power dissipation PC (mW) 500 100 Collector to base voltage VCB (V) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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