Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A +0.1 0.3Ð0.0 ■ Features Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Collector to 2SD1820 base voltage 2SD1820A Collector to 2SD1820 25 V 50 VEBO 5 V ICP 1 A Collector current IC 500 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Symbol ICBO 2SD1820 voltage 2SD1820A Collector to emitter 2SD1820 voltage 2SD1820A Emitter to base voltage 1:Base 2:Emitter 3:Collector EIAJ:SC–70 SMini3-G1 Package Marking symbol : W(2SD1820) X(2SD1820A) (Ta=25˚C) Parameter Collector to base Conditions min VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 *1 V V 5 Collector to emitter saturation voltage VCE(sat) Transition frequency Collector output capacitance V 160 340 IC = 300mA, IB = 30mA*2 0.35 0.6 fT VCB = 10V, IE = –50mA*2, f = 200MHz 200 Cob VCB = 10V, IE = 0, f = 1MHz Rank classification 632 Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 2SD1820 WQ WR WS 2SD1820A XQ XR XS V MHz 6 15 *2 Marking Symbol µA 50 40 FE1 0.1 25 85 *1h Unit 60 VCE = 10V, IC = 500mA*2 VCE = 10V, IC = max 30 hFE2 hFE1 typ VCB = 20V, IE = 0 150mA*2 Forward current transfer ratio 0.2±0.1 V 60 Peak collector current Collector cutoff current 5û 10û Emitter to base voltage ■ Electrical Characteristics 2.0±0.2 Unit 30 VCEO 2.1±0.1 1.3±0.1 Ratings VCBO emitter voltage 2SD1820A 1.25±0.10 (Ta=25˚C) Symbol 2 +0.2 Parameter 1 (0.65) (0.65) 0.9Ð0.1 ■ Absolute Maximum Ratings 3 0.9±0.1 ● +0.10 0.15Ð0.05 0 to 0.1 ● (0.425) Unit: mm pF Pulse measurement 2SD1820, 2SD1820A Transistor PC — Ta IC — VCE 80 600 500 4mA 400 3mA 300 2mA 200 1mA 600 500 400 300 200 40 100 100 0 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 4 30 10 3 1 Ta=75˚C 0.3 25˚C –25˚C 0.03 0.3 1 3 30 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 fT — IE 0.3 200 160 120 80 40 Collector output capacitance Cob (pF) VCB=10V Ta=25˚C 1 3 Emitter current IE (mA) –100 8 10 250 Ta=75˚C 200 25˚C –25˚C 150 100 50 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) VCER — RBE 8 6 4 2 0 –30 6 VCE=10V 10 IE=0 f=1MHz Ta=25˚C 10 4 300 Cob — VCB 12 –10 2 Base current IB (mA) Collector current IC (A) 240 –3 0 IC/IB=10 Collector current IC (A) 0 –1 20 hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 0.1 16 VBE(sat) — IC 100 0.01 0.01 0.03 12 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.1 8 Forward current transfer ratio hFE 20 120 Collector to emitter voltage VCER (V) 0 Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 120 VCE=10V Ta=25˚C 700 IB=10mA 9mA 8mA 7mA 6mA 5mA 200 160 800 Ta=25˚C 700 0 Transition frequency fT (MHz) IC — I B 800 Collector current IC (mA) Collector power dissipation PC (mW) 240 IC=2mA Ta=25˚C 100 80 60 2SD1820A 40 2SD1820 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1000 Base to emitter resistance RBE (kΩ) 633 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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