Transistors 2SD1994A Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 4.0 0.8 0.2 0.7 14.5±0.5 0.65 max. +0.1 2.5±0.5 3 2.5±0.1 2 +0.1 2.5±0.5 1 0.45−0.05 0.45−0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1.0 1.0 ■ Features • Low collector to emitter saturation voltage VCE(sat) • Output of 2 W to 3 W is obtained with a complementary pair with 2SB1322A • Allowing supply with the radial taping (1.45) 0.5 4.5±0.1 0.15 For low-frequency power amplification and driver amplification Complementary to 2SB1322A Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+− 0.1 0.05 Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion (HW Type) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit 0.1 µA Collector cutoff current ICBO VCB = 20 V, IE = 0 Collector to base voltage VCBO IC = 10 µA, IE = 0 60 Collector to emitter voltage VCEO IC = 2 mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 5 V Forward current transfer ratio *1 hFE1 *2 VCE = 10 V, IC = 500 mA 85 hFE2 VCE = 5 V, IC = 1 A 50 V 340 100 Collector to emitter saturation voltage *1 VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 V Base to emitter saturation voltage *1 VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.2 V VCB = 10 V, IE = −50 mA, f = 200 MHz 200 VCB = 10 V, IE = 0, f = 1 MHz 11 Transition frequency *1 fT Collector output capacitance Cob MHz 20 pF Note) *1: Pulse measurement *2: Rank classification Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Product of no-rank is not classified and have no indication for rank. 1 2SD1994A Transistors PC Ta Ta = 25°C 1.25 0.8 0.6 0.4 IB = 10 mA 9 mA 8 mA 7 mA 1.00 6 mA 5 mA 0.75 4 mA 3 mA 0.50 2 mA 0.25 0.2 0 20 40 60 80 100 120 140 160 2 4 IC / IB = 10 1 25°C −25°C Ta = 100°C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 3 3 120 100 80 60 40 20 −20−30 −50 −100 Emitter current IE (mA) 2 6 8 10 12 VCE = 10 V 25°C 100°C 0.3 0.1 400 300 Ta = 100°C 25°C 200 −25°C 100 0.03 0.1 0.3 1 3 0 0.01 0.03 10 Collector current IC (A) 30 20 10 1 3 10 1 3 10 VCER RBE 40 0 0.3 120 IE = 0 f = 1 MHz Ta = 25°C 50 0.1 Collector current IC (A) Cob VCB Collector output capacitance Cob (pF) Transition frequency fT (MHz) 140 −10 4 hFE IC Ta = −25°C 1 60 160 −2 −3 −5 2 500 10 0.01 0.01 0.03 10 VCB = 10 V Ta = 25°C 0 −1 0 Base current IB (mA) IC / IB = 10 fT IE 180 0 10 30 Collector current IC (A) 200 0.4 VBE(sat) IC 3 0.1 8 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) VCE(sat) IC 0.3 6 0.6 0.2 1 mA 0 0.8 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) 10 1.0 Forward current transfer ratio hFE 0 VCE = 10 V Ta = 25°C Collector to emitter voltage VCER (V) 1.0 0 IC IB 1.2 Collector current IC (A) Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness Collector current IC (A) Collector power dissipation PC (W) IC VCE 1.50 1.2 30 100 Collector to base voltage VCB (V) IC = 10 mA Ta = 25°C 100 80 60 40 20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) Transistors 2SD1994A ICEO Ta 104 Area of safe operation (ASO) 10 VCE = 10 V Single pulse Ta = 25°C 3 ICP Collector current IC (A) ICEO (Ta) ICEO (Ta = 25°C) 103 102 10 1 t = 10 ms IC t=1s 0.3 0.1 0.03 0.01 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 0.001 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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