Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm ● ● ● ■ Absolute Maximum Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 5 V Peak collector current ICP 15 A Collector current IC 9 A 100 PC Junction temperature Tj Storage temperature Tstg 3 ■ Electrical Characteristics 2.0±0.1 1.1±0.1 1 2 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) W 150 ˚C –55 to +155 ˚C (TC=25˚C) Parameter Conditions Symbol min Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 3V, IC = 0 hFE1 VCE = 5V, IC = 20mA 20 hFE2* VCE = 5V, IC = 1A 60 hFE3 VCE = 5V, IC = 7A 20 Forward current transfer ratio 0.6±0.2 5.45±0.3 Ratings Ta=25°C 2.0±0.2 10.9±0.5 Symbol dissipation φ3.2±0.1 (TC=25˚C) Parameter Collector power TC=25°C 21.0±0.5 15.0±0.2 ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier Full-pack package which can be installed to the heat sink with one screw 5.0±0.2 3.2 16.2±0.5 12.5 3.5 Solder Dip ● 15.0±0.3 11.0±0.2 0.7 ■ Features typ VCB = 150V, IE = 0 max Unit 50 µA 50 µA 200 Base to emitter voltage VBE VCE = 5V, IC = 7A 1.8 V Collector to emitter saturation voltage VCE(sat) IC = 7A, IB = 0.7A 2.0 V Transition frequency fT VCE = 5V, IC = 0.5A, f = 1MHz 20 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 150 pF *h FE2 Rank classification Rank Q S P hFE2 60 to 120 80 to 160 100 to 200 1 Power Transistors 2SD2052 PC — Ta IC — VCE IC — VBE 20 100 80 60 40 20 TC=25˚C IB=1000mA 16 12 200mA 8 100mA 50mA 4 20 900mA 800mA 700mA 600mA 500mA 400mA 300mA VCE=5V Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) (1) Collector current IC (A) Collector power dissipation PC (W) 120 16 25˚C TC=–25˚C 12 100˚C 8 4 (2) (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 10 12 –25˚C 0.1 0.03 0.01 0.003 0.001 0.1 0.3 1 3 10 30 300 TC=100˚C 100 –25˚C 25˚C 30 10 3 0.3 1 3 10 30 100 Collector current IC (A) Cob — VCB Area of safe operation (ASO) IE=0 f=1MHz TC=25˚C 100 Non repetitive pulse TC=25˚C 30 ICP Collector current IC (A) 300 10 IC t=10ms 3 100ms DC 1 0.3 0.1 30 0.03 10 0.01 1 3 10 30 100 Collector to base voltage VCB (V) 2.0 2.4 VCE=5V f=1MHz TC=25˚C 300 100 30 10 3 1 1 3 10 30 100 300 0.1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 100 1000 1.6 0.3 1 0.1 100 10000 3000 1.2 VCE=5V 3000 1000 0.3 0.8 fT — IC Transition frequency fT (MHz) 25˚C 1 0.4 Base to emitter voltage VBE (V) 1000 IC/IB=10 TC=100˚C 3 0 hFE — IC Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 8 10000 10 Collector current IC (A) Collector output capacitance Cob (pF) 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 2 4 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD2052 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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