2SD2497 Silicon NPN Epitaxial Application TO–92 (1) Low frequency power amplifier Features • Low saturation voltage VCE(sat) ≤ 0.3 V • Large current capacitance IC = 5 A 3 2 1 1. Emitter 2. Collector 3. Base Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to base voltage VCBO 40 V ——————————————————————————————————————————— Collector to emitter voltage VCEO 20 V ——————————————————————————————————————————— Emitter to base voltage VEBO 7 V ——————————————————————————————————————————— Collector current IC 5 A ——————————————————————————————————————————— Collector peak current ic(peak)* 8 A ——————————————————————————————————————————— Collector power dissipation PC 0.75 W ——————————————————————————————————————————— Junction temperature Tj 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— Note: * Tc = 25°C, PW ≤ 100µs, Duty cycle ≤ 1% 2SD2497 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Collector to base breakdown voltage V(BR)CBO 40 — — V IC = 10 µA, IE = 0 ——————————————————————————————————————————— Collector to emitter breakdown voltage V(BR)CEO 20 — — V IC = 1 mA, RBE = ∞ ——————————————————————————————————————————— Emitter to base breakdown voltage V(BR)EBO 7 — — V IE = 10 µA IC = 0 ——————————————————————————————————————————— Collector to base cutoff current ICBO — — 0.1 µA VCB = 20 V, IE = 0 ——————————————————————————————————————————— Collector to emitter cutoff current ICEO — — 1 µA VCE = 10 V, RBE = ∞ ——————————————————————————————————————————— Emitter to base cutoff current IEBO — — 0.1 µA VEB = 5 V, IC = 0 ——————————————————————————————————————————— DC current transfer ratio hFE1* 250 — 600 VCE = 2 V, IC = 0.5 A ——————————————————————————————————————————— DC current transfer ratio hFE2 100 — — VCE = 2 V, IC = 5 A ——————————————————————————————————————————— Collector to emitter saturation voltage VCE(sat) — — 0.3 V IC =3 A IB = 0.1 A ——————————————————————————————————————————— Gain bandwidth product fT — 230 — MHz VCE = 6 V, IC = 50 mA ——————————————————————————————————————————— Collector output capacitance Cob — 30 — pF VCB = 10 V IE = 0 f = 1 MHz ——————————————————————————————————————————— 2SD2497 Maximum Safe Operation Area 20 I C (A) Collector Current 0.1 Typical Transfer Characteristics 1.0 8 mA 6 mA 2 4 mA 2 mA 1 IB=0 0 I C (A) Collector Current 3 0.8 Collector Current I C (A) 4 Ta = 25 °C 1 shot pulse 0.02 5 10 20 50 100 0.1 0.2 0.5 1 2 Collector to Emitter Voltage V CE (V) Typical Output Characteristics mA18 mA A 16 m A 14 m 12 mA 10 mA s 0.2 5 20 0m n tio 200 ra 50 100 150 Ambient Temperature Ta (°C) pe 0.5 0.05 0 O 0.2 1 C 0.4 =1 2 1 ms 0.6 PW 10 ic(peak) I (max) 5 C D Collector Power Dissipation Pc (W) Maximum Collector Power Dissipation Curve 0.8 0.6 V CE = 2 V Ta=25°C 0.4 0.2 Tc = 25 °C 0.2 0.4 0.6 0.8 1 Collector to Emitter Voltage V CE (V) 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage V BE (V) 2SD2497 Collector to Emitter Saturation Voltage vs. Base Current DC Current Transfer Ratio vs. Collector Current 75 °C 10 Collector to Emitter Saturation Voltage VCE(sat) (V) DC Current Transfer Ratio hFE 1000 25 °C 500 200 Ta = –25 °C 100 50 20 VCE = 2 V Pulse test Pulse test Ta = 25 °C 5 2 1 0.5 IC=5A 0.2 2.5 A 0.1 1A 0.05 10 0.01 0.02 0.05 0.1 0.2 0.5 Collector Current 1 2 5 1 10 1 0.5 Ta = –25 °C 25 °C 75 °C 0.1 V CE(sat) 25 °C 75 °C 0.02 Ta = –25 °C 0.01 Pulse test I C = 20 I B 0.005 0.002 0.01 0.02 0.05 0.1 0.2 0.5 1 10 20 50 100 200 500 1000 1000 VBE(sat) 0.2 0.05 5 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product f T (MHz) Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Saturation Voltage vs. Collector Current 2 2 Base Current I B (mA) I C (A) 2 Collector Current I C (A) 5 500 200 100 50 20 Pulse test V CE = 6 V Ta=25°C 10 10 0.01 0.02 0.05 0.1 0.2 0.5 Collector Current I C (A) 1 2SD2497 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 500 IE =0 f = 1 MHz 200 100 50 20 10 1 2 5 10 20 50 Collector to Base Voltage VCB (V)