isc Product Specification INCHANGE Semiconductor isc Silicon NPNPower Transistor 2SD726 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 80V(Min) ·High Power Dissipation ·Complement to Type 2SB690 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO n c . i m e VALUE UNIT 100 V 80 V Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -45~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPNPower Transistor 2SD726 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 2.0 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 0.1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain COB Collector Output Capacitance fT B C 60-120 100-200 n c . i m e s c s .i ww w isc Website：www.iscsemi.cn MIN TYP. B IC= 0.1A; VCE= 5V Current-Gain—Bandwidth Product hFE-1 Classifications CONDITIONS 60 MAX UNIT 200 35 IE= 0; VCB= 20V; f= 1MHz 40 pF IC= 0.5A; VCE= 5V 10 MHz 2