isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC790 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 1.4(V)(Max)@ IC= 2A ·DC Current Gain: hFE= 40-240 @ IC= 0.5A ·Complement to Type 2SA490 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IE Emitter Current-Continuous -3 A PC Total Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC790 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.4 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 2V 1.8 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.5A; VCE= 2V 40 hFE-2 DC Current Gain IC= 2A; VCE= 2V 13 Current-Gain—Bandwidth Product IC= 0.5A; VCE= 2V 3 Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT COB CONDITIONS O Y 40-80 70-140 120-240 isc Website：www.iscsemi.cn TYP. B hFE-1 Classifications R MIN 2 MAX UNIT 240 MHz 70 pF