isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB856 DESCRIPTION ·Collector Current: IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A ·High Collector Power Dissipation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s i . w w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO n c . i m e VALUE UNIT -50 V -50 V Emitter-Base Voltage -4 V IC Collector Current-Continuous -3 A PC Total Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -45~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB856 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; RBE= ∞ -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA ; IE= 0 -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -4 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.2 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V -1.5 V ICBO Collector Cutoff Current VCB= -20V; IE= 0 -100 μA hFE-1 DC Current Gain hFE-2 DC Current Gain fT w A B 35-70 60-120 n c . i m e s c s .i IC= -1A; VCE= -4V 35 IC= -0.1A; VCE= -4V 35 IC= -0.5A; VCE= -4V C 100-200 isc Website：www.iscsemi.cn MIN TYP. B ww Current-Gain—Bandwidth Product hFE-1 Classifications CONDITIONS 2 MAX UNIT 200 35 MHz