isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1408 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Complement to Type 2SB1017 APPLICATIONS ·Designed for power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w VALUE UNIT 80 V 80 V 5 V 4 A IC Collector Current-Continuous IB Base Current-Continuous 0.4 A PC Collector Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1408 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 30 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance fT CONDITIONS w w hFE classifications R O 40-80 70-140 MAX 80 n c . i m e s c is IC= 0.5A; VCE= 5V 40 IC= 3A; VCE= 5V 15 UNIT V 240 IE= 0; VCB= 10V, ftest= 1MHz 90 pF IC= 0.5A; VCE= 5V 8 MHz Y 120-240 isc Website：www.iscsemi.cn TYP. B w. Current-Gain—Bandwidth Product MIN 2