isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1770 DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min.) ·Complement to Type 2SB1190 APPLICATIONS ·Power amplifier applications. ·TV vertical deflection output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w VALUE UNIT 200 V 150 V 6 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 2 A Total Power Dissipation @ TC=25℃ 25 PC TJ Tstg W Total Power Dissipation @ Ta=25℃ 1.4 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1770 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.3A; VCE= 10V 1.0 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 50 μA hFE-1 DC Current Gain hFE-2 DC Current Gain fT COB CONDITIONS B w Output Capacitance P 60-140 100-240 isc Website：www.iscsemi.cn MAX UNIT V 6 V IC= 0.1A; VCE= 10V 60 IC= 0.3A; VCE= 10V 50 240 IC= 0.1A; VCE= 10V 20 MHz IE= 0; VCB= 10V; ftest=1MHz 27 pF hFE-1 Classifications Q TYP. 150 n c . i m e s c s .i ww Current-Gain—Bandwidth Product MIN 2