PFR 850S → 856S FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET LOW FORWARD VOLTAGE DROP HIGH SURGE CURRENT CAPABILITY APPLICATIONS AC-DC POWER SUPPLIES AND CONVERTERS FREE WHEELING DIODES, etc. DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diodes very attractive components for many demanding applications. DO-201AD (Plastic) ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Parameter Value Unit IFRM Repetitive Peak Forward Current tp ≤ 20µs 100 A IF (AV) Average Forward Current* Ta = 90°C δ = 0.5 3 A IFSM Surge non Repetitive Forward Current tp = 10ms Sinusoidal 100 A Ptot Power Dissipation* Ta = 90°C 3.5 W Tstg Tj Storage and Junction Temperature Range - 40 to + 175 - 40 to + 175 °C 230 °C TL Maximum Lead Temperature for Soldering during 10s at 4mm from case Symbol PFR Parameter Unit 850S 851S 852S 854S 856S VRRM Repetitive Peak Reverse Voltage 50 100 200 400 600 V VRSM Non Repetitive Peak Reverse Voltage 75 150 250 450 650 V THERMAL RESISTANCE Symbol Rth (j - a) Parameter Junction-ambient* Value Unit 25 °C/W * On infinite heatsink with 10mm lead length. August 1996 - Ed: 1 1/3 PFR 850S → 856S ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol IR Test Conditions Tj = 25°C Min. Typ. VR = VRRM Tj = 25°C Unit 10 µA 250 Tj = 100°C VF Max. IF = 3A 1.25 V Max. Unit ns RECOVERY CHARACTERISTICS Symbol trr IRM 2/3 Test Conditions Min. Typ. Tj = 25°C IF = 1A PRF 850S →854S 150 VR= 30V diF/dt = - 25A/µs PRF 856S 200 Tj = 25°C IF = 1A VR= 30V diF/dt = - 25A/µs 2 A PFR 850S → 856S PACKAGE MECHANICAL DATA DO-201AD B A note 1 E B E ØD ØC note 1 ØD note 2 REF. DIMENSIONS NOTES Millimeters Inches Min. Max. Min. Max. A 9.50 0.374 B 25.40 1.000 1 - The lead diameter ∅ D is not controlled over zone E 5.30 0.209 ∅C 1.30 0.051 2 - The minimum axial lengh within which the device may be ∅D placed with its leads bent at right angles is 0.59"(15 mm) E 1.25 0.049 Weight : 1 g Marking : Type number White band indicates cathode cooling method : by convertion (method A) Date code Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1996 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 3/3