PH1090-15L AVIONICS PULSED POWER TRANSISTOR 15 WATTS, 1030 - 1090 MHz, 250µs PULSE, 10% DUTY M/A-COM PHI, INC. FEATURES OUTLINE DRAWING • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 70 V Emitter-Base Voltage VEBO 3.0 V Collector Current IC 1 A Total Power Dissipation PD 32 W Storage Temperature TSTG -65 to +200 °C Junction Temperature TJ 200 °C ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units BVCES 70 - V ICES - 2.5 mA RTH(JC) - 3 °C/W VCC=45 V, Pout=15 W, F=1.03, 1.09 GHz POUT 15 - W VCC=45 V, PIN=2 W, F=1.03, 1.09 GHz Power Gain GP 9.0 - dB VCC=45 V, Pout=15 W, F=1.03, 1.09 GHz Collector Efficiency ηC 40 - % VCC=45 V, Pout=15 W, F=1.03, 1.09 GHz Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Input Return Loss Test Conditions IC=12.5 mA VCE=40 V RL 8 - dB VCC=45 V, Pout=15 W, F=1.03, 1.09 GHz Load Mismatch Tolerance VSWR-T - 3:1 - VCC=45 V, Pout=15 W, F=1.03, 1.09 GHz Load Mismatch Stability VSWR-S - 1.5:1 - VCC=45 V, Pout=15 W, F=1.03, 1.09 GHz BROADBAND TEST FIXTURE IMPEDANCE F (MHz) Z IF (Ω) Z OF (Ω) 1030 1090 1.7 - j4.5 1.6 -j4.1 5.9 + j14.5 8.3 + j17.7 M/A-COM POWER HYBRIDS OPERATION · 1742 CRENSHAW BLVD · TORRANCE, CA 90501 (310) 320-6160 · FAX (310) 618-9191 M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS180 Rev 04/11/97