an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic‘NletalKeramic Package Absolute Maximum Ratings at 25°C UNLESS Electrical Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Emitterleakage Current Thermal Resistance C-iTRW:SE ‘ICTED. T3LE?ANCES A?E Symbol Min Max Units BV,,, 65 - V lc=l 2 mA ICES 1.5 mA v,,=40 v RW(X) 5.8 “C/w V,,=28 V, P&.2 W, F=1.20,1.30,1.40 W, F=1.20, 1.30, 1.40GHz GHz - w V,,=28 V, P,,=1.2 Power Gain GP 7.0 - dB V,,=28 V, P,,=1.2 W, F=l.20,1.30,1.40 GHz Collector Efficiency ‘lC 45 - % Vcc=28 V, P,,=l.2 W, F=l.20,1.30,1.40 GHz Input Return Loss RL 6 - dB V,,=28 V, P&.2 Load Mismatch Tolerance VSWR-T - 3:l Load Mismatch Stablility VSWR-S - 1S:l W, F=l.20,1.30,1.40 GHz - V,,=28 V, P,,=l.2 W, F=l.20,1.30,1.40 GHz - V,,=28 V, P,,=1.2 W, F=l.20,1.30,1.40 GHz Test Fixture Impedances F(GHz) z,,m z&-4 1.20 TBD TBD 1.30 TBD TBD Specifications Subject to Change Without Notice. M/A-COM, 9-l 20 North America: IN’HES =.O”‘j’ I IMETERS ; 13yy’ Test Conditions 6.0 Broadband -- at 25°C PO”T Output Power (xI, Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 I