2SK1088-M N-channel MOS-FET F-III Series 150V > Features - 0,3Ω 9A 35W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 150 9 36 9 ±20 35 150 -55 ~ +150 Unit V A A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R GSS DS(on) Forward Transconductance Input Capacitance Output Capacitance g C C oss Reverse Transfer Capacitance C rss Turn-On-Time ton (ton=td(on)+tr) t t t Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time - Thermal Characteristics Item Thermal Resistance t V t fs iss d(on) r d(off) f SD rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=150V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=4,5A VGS=4V ID=4,5A VGS=10V ID=4,5A VDS=25V VDS=25V VGS=0V 5 Typ. Max. Unit V V µA mA nA 1,5 10 0,2 10 0,26 2,5 500 1,0 100 0,40 0,20 0,30 10 900 150 1200 230 Ω S pF pF Ω f=1MHz 40 60 pF VCC=30V ID=9A VGS=10V 10 40 150 15 60 230 ns ns ns RGS=25Ω IF=2xIDR VGS=0V Tch=25°C 30 1,1 45 1,5 ns V IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C 100 Symbol R th(ch-a) Test conditions channel to air R channel to case th(ch-c) Min. 150 1,0 Min. FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56 Typ. ns Max. 62,5 Unit °C/W 3,57 °C/W 2SK1088-M N-channel MOS-FET 150V 0,3Ω 9A F-III Series 35W > Characteristics Typical Output Characteristics ↑ Drain-Source-On-State Resistance vs. Tch ↑ → Tch [°C] Typical Drain-Source-On-State-Resistance vs. ID Gate Threshold Voltage vs. Tch ↑ ID [A] → Tch [°C] VDS [V] C [nF] 8 VDS [V] → Qg [nC] Allowable Power Dissipation vs. TC ↑ ↑ IF [A] ↑ → Forward Characteristics of Reverse Diode VGS [V] Typical Input Charge 7 6 VGS(th) [V] 5 → Typical Capacitance vs. VDS → VGS [V] gfs [S] RDS(ON) [Ω] ID [A] ↑ → Typical Forward Transconductance vs. ID ↑ 4 3 ID [A] ID [A] VDS [V] ↑ ↑ 2 RDS(ON) [Ω] 1 Typical Transfer Characteristics 9 → VSD [V] → Safe operation area Zth(ch-c) [K/W] ↑ ↑ 12 11 ID [A] 10 PD [W] ↑ Transient Thermal impedance Tc [°C] → VDS [V] → This specification is subject to change without notice! t [s] →