2SK1831, 2SK1832 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PFM D G 1 S 2 3 1. Gate 2. Drain 3. Source 2SK1831, 2SK1832 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage K1831 Symbol Ratings Unit VDSS 450 V K1832 500 Gate to source voltage VGSS Drain current ID Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 ±30 V 10 A 30 A 10 A Channel dissipation Pch* 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 2 2SK1831, 2SK1832 Electrical Characteristics (Ta = 25°C) Item Drain to source K1831 breakdown voltage K1832 Symbol Min Typ Max Unit Test Conditions V(BR)DSS 450 — — V I D = 10 mA, VGS = 0 500 — — Gate to source breakdown voltage V(BR)GSS ±30 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±25 V, VDS = 0 Zero gate K1831 I DSS — — 250 µA VDS = 360 V, VGS = 0 voltage drain current K1832 VDS = 400 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static drain to K1831 RDS(on) — 0.6 0.8 Ω ID = 5 A source on state resistance K1832 — 0.7 0.9 VGS = 10 V*1 Forward transfer admittance |yfs| 4.0 7.0 — S ID = 5 A VDS = 10 V*1 Input capacitance Ciss — 1050 — pF VDS = 10 V Output capacitance Coss — 280 — pF VGS = 0 Reverse transfer capacitance Crss — 40 — pF f = 1 MHz Turn-on delay time t d(on) — 15 — ns ID = 5 A Rise time tr — 60 — ns VGS = 10 V Turn-off delay time t d(off) — 90 — ns RL = 6 Ω Fall time tf — 45 — ns Body to drain diode forward voltage VDF — 1.0 — V I F = 10 A, VGS = 0 Body to drain diode reverse recovery time t rr — 350 — ns I F = 10 A, VGS = 0, diF / dt = 100 A / µs Notes 1. Pulse Test See characteristic curves of 2SK1157, 2SK1158 3 2SK1831, 2SK1832 Maximum Safe Operation Area Power vs. Temperature Derating Drain Current I D (A) 3 1 0.3 Ta = 25°C K1831 K1832 0.05 50 100 150 1 Normalized Transient Thermal Impedance γ s (t) 3 10 30 100 300 1000 Drain to Source Voltage VDS (V) Case Temperature Tc (°C) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 1 0.5 0.3 0.2 θch – c(t) = γ s(t). θ ch – c θ ch – c = 2.50°C/W, Tc = 25°C 0.1 0.1 0.03 0.05 PDM 0.02 0.01 0.01 10 µ ho 1S 100 µ D= PW lse t Pu PW T T 1m 10 m Pulse Width PW (S) 4 s = 10 O m pe s ra (1 tio sh n ot (T Operation in this ) c = area is limited 25 °C by R DS (on) ) D C 0.1 0 µs PW s m 25 10 1 50 µ 0 10 Channel Dissipation Pch (W) 10 50 30 75 100 m 1 10 15.6 ± 0.3 5.5 ± 0.3 5.0 1.6 1.4 Max 3.2 21.0 ± 0.5 4.0 2.6 1.4 Max 2.7 19.9 ± 0.3 φ3.2 + 0.4 – 0.2 5.0 ± 0.3 Unit: mm 1.0 ± 0.2 5.45 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PFM — — 5.6 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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