2SK2424 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC – DC converter 2 12 1 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS 450 V ——————————————————————————————————————————— Gate to source voltage VGSS ±30 V ——————————————————————————————————————————— Drain current ID 8 A ——————————————————————————————————————————— Drain peak current ID(pulse)* 32 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR 8 A ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C 2SK2424 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — 250 µA VDS =450 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.4 0.55 Ω ID = 4 A VGS = 10 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 5.0 7.5 — S ID = 4 A VDS = 10 V * ——————————————————————————————————————————— Input capacitance Ciss — 1450 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 410 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 55 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 20 — ns ID = 4 A ———————————————————————————————— Rise time tr — 55 — ns VGS = 10 V ———————————————————————————————— Turn–off delay time td(off) — 130 — ns RL = 7.5Ω ———————————————————————————————— Fall time tf — 50 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — 0.95 — V IF = 8 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 380 — ns IF = 8 A, VGS = 0, diF / dt = 100 A / µs ——————————————————————————————————————————— * Pulse Test See characteristics curves of 2SK1165.