2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 1st. Edition Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain 3. Source 2SK2736 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 30 A 120 A 30 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 25 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 2 2SK2736 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS — — 10 µA VDS = 30 V, VGS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V I D = 1mA, VDS = 10V Static drain to source on state RDS(on) — 20 28 mΩ I D = 15A, VGS = 10V*1 resistance RDS(on) — 35 50 mΩ I D = 15A, VGS = 4V*1 Forward transfer admittance |yfs| 12 18 — S I D = 15A, VDS = 10V*1 Input capacitance Ciss — 750 — pF VDS = 10V Output capacitance Coss — 520 — pF VGS = 0 Reverse transfer capacitance Crss — 210 — pF f = 1MHz Turn-on delay time t d(on) — 16 — ns VGS = 10V, ID = 15A Rise time tr — 260 — ns RL = 0.67Ω Turn-off delay time t d(off) — 85 — ns Fall time tf — 90 — ns Body to drain diode forward voltage VDF — 1.0 — V I F = 30A, VGS = 0 Body to drain diode reverse recovery time t rr — 45 — ns I F = 30A, VGS = 0 diF/ dt = 50A/µs Note: 1. Pulse test See characteristics curves of 2SK2684 3 2SK2736 Main Characteristics Power vs. Temperature Derating 20 10 5 1 10 Operation in this area is limited by R DS(on) m s m s (1 sh ot ) = 25 °C I D (A) 1 = c 2 µs (T Drain Current PW n tio ra pe O 10 50 µs 20 10 100 0 10 Pch (W) 30 200 C D Channel Dissipation Maximum Safe Operation Area 500 40 0.5 Ta = 25 °C 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) ) 0 50 100 Case Temperature 150 200 Tc (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.03 0.01 10 µ 0.2 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 5.0 °C/W, Tc = 25 °C 0.1 0.05 PDM 0.02 1 lse 0.0 pu t ho 1s 100 µ PW T PW T 1m 10 m Pulse Width 4 D= 100 m PW (S) 1 10 2SK2736 Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50Ω V DD = 10 V Vout 10% 10% 90% td(on) tr 10% 90% td(off) tf 5 2SK2736 Package Dimensions Unit: mm 1.0 ± 0.2 1.15 ± 0.2 2.54 ± 0.5 2.54 ± 0.5 2.5 ± 0.2 13.6 ± 1.0 4.45 ± 0.3 4.1 ± 0.3 0.6 ± 0.1 2.7 ± 0.2 15.0 ± 0.3 f 3.2 ± 0.2 12.0 ± 0.3 10.0 ± 0.3 0.7 ± 0.1 Hitachi Code TO–220CFM — EIAJ — JEDEC 6 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.