DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D121 PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes Product data sheet Supersedes data of 1996 May 03 1999 Apr 22 NXP Semiconductors Product data sheet PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes FEATURES • Low switching losses • Fast recovery time • Guard ring protected handbook, halfpage • Hermetically sealed glass SMD package. k a MAM190 APPLICATIONS • Low power, switched-mode power supplies • Rectifying Fig.1 Simplified outline (SOD87) and symbol. • Polarity protection. DESCRIPTION The PRLL5817 to PRLL5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD87 hermetically sealed glass SMD packages incorporating ImplotecTM(1) technology. MARKING TYPE NUMBER PRLL5817 9 PRLL5818 9 PRLL5819 9 (1) Implotec is a trademark of Philips. 1999 Apr 22 MARKING CODE 2 NXP Semiconductors Product data sheet PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR VRSM VRRM VRWM PARAMETER CONDITIONS MIN. MAX. UNIT continuous reverse voltage PRLL5817 − 20 V PRLL5818 − 30 V PRLL5819 − 40 V PRLL5817 − 24 V PRLL5818 − 36 V PRLL5819 − 48 V PRLL5817 − 20 V PRLL5818 − 30 V PRLL5819 − 40 V PRLL5817 − 20 V PRLL5818 − 30 V non-repetitive peak reverse voltage repetitive peak reverse voltage crest working reverse voltage − 40 V IF(AV) average forward current Tamb = 60 °C − 1 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge: VR = 0 − 25 A Tstg storage temperature −65 +175 °C Tj junction temperature − 125 °C PRLL5819 1999 Apr 22 3 NXP Semiconductors Product data sheet PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage TYP. MAX. UNIT see Fig.2 − − 320 mV IF = 1 A − − 450 mV IF = 3 A − − 750 mV IF = 0.1 A − − 330 mV IF = 1 A − − 550 mV IF = 3 A − − 875 mV IF = 0.1 A − − 340 mV IF = 1 A − − 600 mV IF = 3 A − − 900 mV VR = VRRMmax; note 1 − 0.5 1 mA VR = VRRMmax; Tj = 100 °C − 5 10 mA PRLL5817 − 70 − pF PRLL5818 − 50 − pF PRLL5819 − 50 − pF forward voltage PRLL5818 VF MIN. IF = 0.1 A PRLL5817 VF CONDITIONS forward voltage PRLL5819 IR reverse current Cd diode capacitance see Fig.2 see Fig.2 VR = 4 V; f = 1 MHz Note 1. Pulse test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOD87 standard mounting conditions. 1999 Apr 22 4 VALUE UNIT 150 K/W NXP Semiconductors Product data sheet PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes GRAPHICAL DATA MBE634 5 handbook, halfpage IF (A) Tj = 125 oC 4 25 oC 3 2 1 0 0 0.5 VF (V) 1 Fig.2 Typical forward voltage. MBE642 1 a=3 2.5 2 1.57 1.42 1 PF(AV) (W) 0.5 0 0 Fig.3 0.5 1 1.5 IF(AV) (A) 2 PRLL817. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 1999 Apr 22 5 NXP Semiconductors Product data sheet PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes MBE641 1 a=3 2.5 2 1.57 1.42 1 PF(AV) (W) 0.5 0 0 Fig.4 0.5 1.5 1 IF(AV) (A) 2 PRLL5818. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). MBE643 1 a=3 2.5 2 1.57 1.42 1 PF(AV) (W) 0.5 0 0 Fig.5 0.5 1 1.5 IF(AV) (A) 2 PRLL5819. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 1999 Apr 22 6 NXP Semiconductors Product data sheet PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes MBE635 200 MBE640 VRWM VR 0.1 Tj (oC) VRWM δ = 0.2 δ = 0.5 PR (W) δ = 0.2 100 VR 0.05 δ = 0.5 0 0 0 Fig.6 10 VR (V) 20 0 PRLL5817. Maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to SOD87 standard mounting conditions. Fig.7 10 VR (V) PRLL5817. Reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to SOD87 standard mounting conditions. MBE636 200 MBE638 VRWM VR 0.1 Tj (oC) 20 δ = 0.2 δ = 0.5 VRWM δ = 0.2 PR (W) 100 VR δ = 0.5 0.05 0 0 0 Fig.8 20 VR (V) 40 0 PRLL5818. Maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to SOD87 standard mounting conditions. 1999 Apr 22 Fig.9 7 20 VR (V) 40 PRLL5818. Reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to SOD87 standard mounting conditions. NXP Semiconductors Product data sheet PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes MBE637 200 MBE639 VRWM VR 0.1 Tj (oC) δ = 0.5 δ = 0.2 VRWM δ = 0.2 PR (W) 100 VR 0.05 δ = 0.5 0 0 0 10 VR (V) 20 0 Fig.10 PRLL5819. Maximum permissible junction temperature as a function of reverse voltage; device mounted; refer to SOD87 standard mounting conditions. 1999 Apr 22 20 VR (V) 40 Fig.11 PRLL5819. Reverse power dissipation as a function of reverse voltage (max. values); device mounted; refer to SOD87 standard mounting conditions. 8 NXP Semiconductors Product data sheet PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes PACKAGE OUTLINE Hermetically sealed glass surface mounted package; ImplotecTM(1) technology; 2 connectors SOD87 k a (2) D1 L L H DIMENSIONS (mm are the original dimensions) UNIT D D1 H L mm 2.1 2.0 2.0 1.8 3.7 3.3 0.3 D 0 1 2 mm scale Notes 1. Implotec is a trademark of Philips. 2. The marking indicates the cathode. REFERENCES OUTLINE VERSION IEC SOD87 100H03 1999 Apr 22 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-31 99-06-04 9 NXP Semiconductors Product data sheet PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 Apr 22 10 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/02/pp11 Date of release: 1999 Apr 22 Document order number: 9397 750 05474