HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES PS2501-1,-2,-4 PS2501L-1,-2,-4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5kVr.m.s. MIN PS2501-1, -2, -4 and PS2501L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. PS2501-1, -2, -4 are in a plastic DIP (Dual In-line Package) and PS2501L-1, -2, -4 are lead bending type (Gull-wing) for surface mount. • HIGH COLLECTOR TO EMITTER VOLTAGE VCEO: 80 V MIN • HIGH CURRENT TRANSFER RATIO CTR: 300% TYP APPLICATIONS • HIGH SPEED SWITCHING tr = 3 µs, tf = 5 µs TYP • LOW COST Interface circuit for various instrumentations and control equipments • ISOLATED CHANNELS PER EACH PACKAGE • AC LINE / DIGITAL LOGIC • DIGITAL LOGIC / DIGITAL LOGIC • TWISTED PAIR LINE RECEIVER • TELEPHONE / TELEGRAPH LINE RECEIVER • HIGH FREQUENCY POWER SUPPLY FEEDBACK CONROL • RELAY CONTACT MONITOR • POWER SUPPLY MONITOR ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER SYMBOLS Diode VF Transistor PARAMETERS UNITS MIN TYP Forward Voltage, IF = 10 mA V IR Reverse Current, VR = 5 V µA C Junction Capacitance, V= 0, f = 1.0 MHz pF Collector to Emitter Dark Current, Vce = 80 V, IF = 0 nA BVCEO Collector to Emitter Breakdown Voltage, IC = 1 mA, IB = 0 V 40 60 BVECO Emitter to Collector Breakdown Voltage, IE = 100 µA, IB = 0 V 7 9 CTR VCE (sat) R1-2 Current Transfer Ratio 1, IF= 5 mA, VCE = 5 V Collector Saturation Voltage, IF = 10 mA, IC = 2 mA Isolation Resistance, VIN-OUT = 1.0 kV % V Ω 80 300 Isolation Capacitance, V = 0, f = 1.0 MHZ pF ICEO Coupled PS2501-1, -2, -4 PS2501L-1, -2, -4 C1-2 1.4 5 50 100 600 0.3 1011 0.5 tr Rise Time 2, VCC = 10 V, IC = 2 mA, RL = 100 Ω µs 3 tf Fall Time 2, VCC = 10 V, IC = 2 mA, RL = 100 Ω µs 5 Notes: 1. CTR rank (PS2501-1, PS2501L-1 only) K: 300 to 600 % L: 200 to 400 % M: 80 to 240 % D: 100 to 300 % H: 80 to 160 % W: 130 to 260 % Q: 100 to 200% N: 80 to 600 % MAX 1.17 2.Test Circuit for Switching 4 3 8 7 6 5 16 15 14 13 12 11 10 9 VCC PULSE INPUT 1 PW = 100 µS Duty Cycle = 1/10 IF 1 2 1 2 3 4 PS2501-1 PS2501-2 1 2 3 4 5 6 7 8 PS2501-4 50 Ω 2 4 3 VOUT RL = 100 Ω PS2501 - 1, -2, -4, PS2501L -1, -2, -4 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS Diode IF VR ∆PD/°C PD UNITS RATINGS PS2501-1 PS2501-2,4 PS2501L-1 PS2501L-2, 4 Forward Current mA Reverse Voltage V Power Dissipation Derating mW/°C Power Dissipation mW/Ch IF (PEAK) 80 6 1.5 150 80 6 1.2 120 1 1 80 7 50 1.5 150 80 7 50 1.2 120 Vr.m.s. °C °C °C 5000 -55 to +150 -55 to +100 260 5000 -55 to +150 -55 to +100 260 mW/Ch 250 200 Peak Forward Current (PW = 100 µs, Duty Cycle 1%) Transistor VCEO VECO IC ∆PC/°C PC Coupled BV A Collector to Emitter Voltage V Emitter to Collector Voltage V Collector Current mA Power Dissipation Derating mW/°C Power Dissipation mW/Ch Isolation Voltage 2 TSTG TOPT TSOL Storage Temperature Operating Temperature Lead Temperature (Soldering 10 s) Total Power Dissipation PT Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and ouput. TYPICAL PERFORMANCE CURVES (TA = 25 °C) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation, PC (mW) Diode Power Dissipation, PD (mW) 150 PS2501-1 PS2501L-1 100 1.5 mW/˚C PS2501-2 PS2501-4 PS2501L-2 PS2501L-4 50 1.2 mW/˚C 150 PS2501-1 PS2501L-1 100 1.5 mW/˚C PS2501-2 PS2501-4 PS2501L-2 PS2501L-4 50 1.2 mW/˚C 0 0 25 50 75 100 125 Ambient Temperature, TA (°C) 150 25 50 75 100 125 Ambient Temperature, TA (°C) 150 PS2501-1, -2, -4, PS2501L-1, -2, -4 TYPICAL PERFORMANCE CURVES (TA = 25 °C) COLLECTOR CURRENT vs. COLLETOR to EMITTER VOLTAGE FORWARD CURRENT vs. FORWARD VOLTAGE 100 70 50 Collector Current, IC (mA) Forward Current, IF (mA) 60 100 ˚C 60 ˚C 10 5 25 ˚C 0 ˚C -25 ˚C -55 ˚C 1 0.5 50 40 mA 50 mA 20 30 mA 10 20 IF = 5mA 10 0.1 0.7 0.8 0.9 1.0 1.1 1.3 1.2 1.4 0 1.5 2 Forward Voltage, VF (V) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 50 mA 20 mA 10 mA 5 mA 10 VCE = 80 V VCE = 40 V VCE = 24 V VCE = 10 V VCE = 5 V Collector Current, IC (mA) Collector to Emitter Dark Current, ICEO (nA) 10000 1000 10 Collector to Emitter Voltage, VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 100 10 5 2 mA IF = 1 mA 1 0.5 1 -50 -25 0 25 50 75 0.1 100 0 Ambient Temperature, TA (°C) 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage, VCE sat (V) NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.2 450 1.0 0.8 0.6 0.4 0.2 Normalized to 1.0 at TA = 25 ˚C IF = 5 mA, VCE = 5 V 0 -50 -25 0 25 Current Transfer Ratio, CTR (%) ∆CTR, Normalized Output Current 8 6 4 400 350 300 250 200 150 100 50 0 50 75 Ambient Temperature, TA (°C) 100 0.05 0.1 0.5 1 5 10 Forward Current , IF (mA) 50 PS2501-1, -2, -4, PS2501L-1, -2, -4 TYPICAL PERFORMANCE CURVES (TA = 25 °C) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 50 IF = 5 mA VCC = 5 V TA = 25 ˚C CTR 290% tf tf tr ts 100 10 Switching Time, t (µs) Switching Time,t (µs) 1000 10 td ts 1 Ic = 2 mA Vcc = 10 V TA = 25 ˚C CTR 290% tr td 1 0.1 100 500 1 k 5 k 10 k 50 k 100 k 10 50 100 500 1k 5k Load Resistance, RL (Ω ) Load Resistance, RL (Ω) FREQUENCY RESPONSE LONG TERM CTR DEGRADATION IF = 5 mA VCE = 5 V TA = 25 ˚C Voltage Gain, AV (dB) 0 -5 -10 -15 100 Ω RL = 1 kΩ -20 300 Ω 0.5 1 2 5 10 20 50 100 200 500 Frequency, f (KHz) CTR Degradation, (Relative Value) 1.2 TYP. 1.0 0.8 IF = 5 mA TA = 25 ˚C 0.6 0.4 IF = 5 mA TA = 60 ˚C 0.2 0 10 2 3 10 10 4 Operating Time (h) 10 5 10 k PS2501-1, -2, -4, PS2501L-1, -2, -4 OUTLINE DIMENSIONS (Units in mm) DIP (Dual In-line Package) PS2501-2 PS2501-1 5.1 MAX 8 7 6 5 4 3 10.2 MAX 6.5 1 2 3.8 MAX 2.54 7.62 3.8 MAX 4.55 MAX. 4.55 MAX 2.8 MIN. 0.65 2.8 MIN 0.65 0.50 ± 0.10 0.25 M 1.34 1 2 3 4 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 6.5 1. Anode 2. Cathode 3. Emitter 4. Collector 0 to 15 ˚ 2.54 7.62 0.50 ± 0.10 0.25 M 1.34 0 to 15 ˚ PS2501-4 20.3 MAX 16 15 14 13 12 11 10 9 6.5 1 2 3 4 5 6 7 8 3.8 MAX 2.54 1, 3, 5, 7. 2, 4, 6, 8. 9, 11, 13, 15. 10, 12, 14, 16. 7.62 4.55 MAX Anode Cathode Emitter Collector 2.8 MIN 0.65 0.50 ± 0.10 0.25 M 0 to 15˚ 1.34 OUTLINE DIMENSIONS (Units in mm) Lead Bending Type (Gull-wing) PS2501L-1 PS2501L-2 5.1 MAX 8 7 6 5 4 3 10.2 MAX 1 2 3 4 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 7.62 2.54 6.5 3.8 MAX 7.62 2.54 0.05 to 0.2 6.5 3.8 MAX 0.05 to 0.2 0.9 ± 0.25 1.34 ± 0.10 0.25 M 0.9 ± 0.25 1.34 ± 0.10 0.25 M 9.60 ± 0.4 9.60 ± 0.4 PS2501L-4 20.3 MAX 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 7.62 2.54 6.5 3.8 MAX 0.05 to 0.2 0.9 ± 0.25 1.34 ± 0.10 0.25 M 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 9.60 ± 0.4 1, 3, 5, 7. 2, 4, 6, 8. 9, 11, 13, 15. 10, 12, 14, 16. Anode Cathode Emitter Collector PS2501-1, -2, -4, PS2501L-1, -2, -4 OUTLINE DIMENSIONS (Units in mm) PS2501L-1* PS2501-1* 4.6 ± 0.35 4 3 6.5 4 3 4.6 ± 0.35 1 2 1 2 6.5 7.62 7.62 3.8 MAX 4.55 MAX 2.8 MIN 3.8 MAX 0.05 to 0.2 0.65 0.90 ± 0.25 1.34 2.54 0.50 ± 0.1 2.54 9.60 ± 0.4 1.34 ± 0.1 0 to 15˚ *These packages are manufactured using the new Phoenix manufacturing process, and are interchangeable with the standard PS2501-1 and PS2501L-1. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -3/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE