CEL PS2915-1-F4

PS2915-1
HIGH CTR, AC INPUT RESPONSE TYPE
4 PIN ULTRA SMALL PACKAGE
FLAT LEAD OPTOCOUPLER
FEATURES
DESCRIPTION
• HIGH CURRENT TRANSFER RATIO:
CTR = 200% TYP @ IF = ±1 mA, VCE = 5 V
The PS2915-1 is an optically coupled isolator containing a
GaAs light emitting diode and an NPN silicon phototransistor
in one package for high density mounting applications. An ultra
small flat lead package has been provided which realizes a
reduction in mounting area of about 30% compared with the
PS28XX series.
• ULTRA SMALL FLAT-LEAD PACKAGE:
4.6 (L) x 2.5 (W) x 2.1 (H) mm
• HIGH ISOLATION VOLTAGE
BV: 2500 Vr.m.s.
• TAPE AND REEL AVAILABLE:
PS2915-F3, F4: 3500 pcs/reel
APPLICATIONS
• DC/DC CONVERTER
• MODEM/PC CARD
ELECTRICAL CHARACTERISTICS
SYMBOLS
Transistor Diode
(TA = 25°C)
PART NUMBER
PS2915-1
PARAMETERS
UNITS
MIN
TYP
MAX
0.9
1.1
1.3
VF
Forward Voltage, IF = ±1 mA
V
CT
Terminal Capacitance, V = 0, f = 1.0 MHz
pF
Collector to Emitter Dark Current, IF = 0 mA, VCE = 40 V nA
ICEO
30
100
CTR
Current Transfer Ratio (IC/IF)1, IF = ±1 mA, VCE = 5 V
%
VCE(sat)
Collector Saturation Voltage, IF = ±1 mA, IC = 0.2 mA
V
Coupled
100
200
400
0.13
0.3
RI-O
Isolation Resistance, VI-O = 1.0 kVDC
Ω
CI-O
Isolation Capacitance, V = 0 V, f = 1.0 MHz
pF
0.4
tr
Rise Time2, VCC = 5 V, IC = 2 mA, RL = 1 kΩ
µs
5
10
Fall
Time2,
1011
tf
VCC = 5 V, IC = 2 mA, RL = 1 kΩ
µs
ton
On Time, VCC = 5 V, IF = ±1 mA, RL = 5 kΩ
µs
40
ts
Storage Time2, VCC = 5 V, IF = ±1 mA, RL = 5 kΩ
µs
10
toff
Off Time2, VCC = 5 V, IF = ±1 mA, RL = 5 kΩ
µs
120
Notes:
1. CTR RANK:
N: 100 to 400 (%)
2. Test Circuit for Switching Time
PS2915-1
VCC
PULSE INPUT
4
3
1
2
PW = 100 µs
Duty Cycle = 1/10
In monitor
IF
50 Ω
Date Published: August 4, 2005
VOUT
RL = 1 kΩ or 5 kΩ
PS2915-1
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
OPTOCOUPLER CONSTRUCTION
SYMBOLS
Diode
IF
∆IF/˚C
IF (Peak)
PD
Transistor
VCEO
VECO
IC
∆PC/˚C
PC
Coupled
BV
PT
TA
TSTG
PARAMETER
UNITS (MIN)
Air Distance
4 mm
Creepage Distance
4 mm
Isolation Distance
0.4 mm
±50
0.5
±0.5
60
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation V
V
mA
mW/˚C
mW
40
5
40
1.2
120
Vr.m.s.
mW
°C
°C
2500
160
-55 to +100
-55 to +150
Isolation Voltage3
Total Power Dissipation
Operating Ambient Temp.
Storage Temperature
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. PW = 100 µs, Duty Cycle = 1%.
3. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input
and output.
CAUTIONS REGARDING NOISE:
Be aware that when voltage is applied suddenly between the
optocoupler's input and outout or between collector-emitters at
startup, the output side may enter the on state, even if the voltage
is within the absolute maximum ratings.
OUTLINE DIMENSIONS (Units in mm)
2.5±0.3
4
N
1
PART NUMBER
PACKING STYLE
PS2915-1-F3
Embossed Tape 3500 pcs/reel
PS2915-1-F4
2
5.0±0.2
0.4±0.1
0.2±0.1
1.27
TOP VIEW
ORDERING INFORMATION (Solder Contains Lead)
3
4.1 MIN
mA
mW/°C
A
mW
+0.1
Forward Current Forward Current Derating
Peak Forward Current2
Power Dissipation
0.15 -0.05
RATINGS
4.6±0.2
UNITS
2.1 MAX
PARAMETERS
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
ORDERING INFORMATION (Pb-Free)
PART NUMBER
PACKING STYLE
PS2915-1-F3-A
Embossed Tape 3500 pcs/reel
PS2915-1-F4-A
RECOMMENDED MOUNT PAD DIMENSIONS (Units in mm)
0.8
0.6
1.27
(0.35)
–An initial of "NEC"
N
111
No. 1 pin mark
(nicked corner)
4.14
–Last number of
Type No: 15
5.7
15
4.7
MARKING
–Assembly lot
1
11
Week assembled
Year assembled
24-R0.1
( ): Reference value
PS2915-1
TYPICAL CHARACTERISTICS
(TA = 25°C, unless otherwise specified)
MAXIMUM FORWARD CURRENT
vs. ambient temperature
140
Transistor Power Dissipation, PC (mW)
Maximum Forward Current, IF (mA)
80
60
40
0.5 mA/°C
20
25
0
50
75
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
120
100
80
60
40
20
0
100
25
20
100
Collector Current, IC (mA)
TA = +100°C
+60°C
+25°C
0°C
-25°C
-50°C
0.1
IF = 5 mA
16
14
12
10
8
6
2 mA
4
1 mA
2
0.01
0.0
0.5
1.0
1.5
0.5 mA
0
2.0
2
10
10000
Collector Current, IC (mA)
Collector to Emitter Dark Current, ICEO (nA)
COLLECTOR TO EMITTER DARK CURRENT
vs. AMBIENT TEMPERATURE
1000
VCE = 20 V
40 V
10
1
-25
0
25
50
4
6
8
10
Collector to Emitter Voltage, VCE (V)
Forward Voltage, VF (V)
100
125
CTR = 200 %
18
Forward Current, IF (mA)
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
FORWARD CURRENTvs.
FORWARD VOLTAGE
1
75
Ambient Temperature, TA (°C)
Ambient Temperature, TA (°C)
10
50
75
Ambient Temperature, TA (°C)
100
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
CTR = 200%
5 mA
2 mA
1 mA
1
IF = 0.5 mA
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Collector Saturation Voltage, VCE(sat) (V)
PS2915-1
TYPICAL CHARACTERISTICS
(TA = 25°C, unless otherwise specified)
500
1.4
Current Transfer Ratio, CTR (%)
Normalized Current Transfer Ratio, CTR
NORMALIZED CURRENT TRANSFER RATIO
vs. AMBIENT TEMPERATURE
1.2
1.0
0.8
0.6
0.4
Normalized to 1.0
at TA = 25°C,
IF = 1 mA, VCE = 5 V
0.2
0.0
-50
-25
0
25
50
75
CURRENT TRANSFER RATIO
vs. FORWARD CURRENT
VCE = 5 V,
n=3
400
B
200
100
0
0.1
100
Normalized Gain, GV
Switching Time, t (µs)
ts
ton
10
10k
100k
1000k
LONG TERM CTR DEGRADATION
1.2
IF = 1 mA
TA = 25°C
CTR (relative Value)
0.8
60°C
0.6
0.4
0.2
0.0
10
10 2
10 3
10 4
-5
100 Ω
RL = 1 kΩ
-10
300 Ω
-15
-20
-25
0.1
1
10
100
Frequency, f (kHz)
Load Resistance, RL (Ω)
1.0
100
0
toff
1
1k
10
FREQUENCY RESPONSE
IF = 1 mA,
VCC = 5 V,
CTR = 200 %
100
1
Forward Current, IF (mA)
SWITCHING TIME
vs. LOAD RESISTANCE
1000
C
300
Ambient Temperature, TA (°C)
10000
Sample A
10 5
Time (Hr)
Remark: The graphs indicate nominal characteristics.
10 6
1000
PS2915-1
TAPING SPECIFICATIONS (Units in mm)
+0.1
5.3 ± 0.1
1.55 -0
1.55 ± 0.05
2.9 MAX
12.0 ± 0.2
2.0 ± 0.5
4.0 ± 0.1
1.75 ± 0.1
Tape Outline and Dimensions
5.3 ± 0.1
2.4±0.1
2.9 ± 0.1
4.0 ± 0.1
Tape Direction
N
N
N
N
N
N
N
PS2915-1-F4
N
PS2915-1-F3
Reel Outline and Dimensions
2.0±0.5
2.0 ± 0.5
R1.0
Packing: 3500 pcs/reel
φ21.0 ± 0.8
φ100 ± 1.0
φ330±2.0
φ13.0 ± 0.2
13.5±1.0
11.9 to 15.4
Outer edge of
flange
PS2915-1
Recommended Soldering Conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260 ˚C or below (package surface temperature)
• Time of peak reflow temperature
10 seconds or less
• Time of temperature higher than 220 ˚C
60 seconds or less
• Time to preheat temperature from 120 to 180°C
120±30 s • Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt % is recommended).
Package Surface Temperature T (˚C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260 ˚C (peak temperature)
220 ˚C
to 60 s
180 ˚C
120˚C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
260 ˚C or below (molten solder temperature)
• Time
10 seconds or less
• Preheating conditions
120°C or below (package surface temperature) • Number of times
One (Allowed to be dipped in solder including plastic mold portion.) • Flux
Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt % is recommended).
(3) Cautions
• Fluxes
Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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