BB 535 Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance Type Marking Ordering Code Pin Configuration Package BB 535 white S 1=C SOD-323 Q62702-B580 2=A Maximum Ratings Parameter Symbol Values Diode reverse voltage VR 30 Peak reverse voltage (R ≥ 5kΩ) VRM 35 Forward current IF 20 Operating temperature range Top - 55 ... + 125 Storage temperature Tstg - 55 ... + 150 Unit V mA °C Thermal Resistance Junction - ambient RthJA Semiconductor Group 1 ≤ 450 K/W Jan-08-1997 BB 535 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current IR nA VR = 30 V, TA = 25 °C - - 10 VR = 30 V, TA = 85 °C - - 200 AC characteristics Diode capacitance CT pF VR = 1 V, f = 1 MHz 17.5 18.7 20 VR = 2 V, f = 1 MHz 14.01 15 16.1 VR = 25 V, f = 1 MHz 2.05 2.24 2.4 VR = 28 V, f = 1 MHz 1.9 2.1 2.3 Capacitance ratio CT2/CT25 VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio 6.7 7.5 8.2 8.9 9.8 ∆CT/CT VR = 1 ... 28 V, f = 1 MHz Series resistance 6 CT1/CT28 VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching - % - - 2.5 Ω rs VR = 3 V, f = 470 MHz Series inductance Ls Semiconductor Group 2 - 0.55 0.65 - 2 - nH Jan-08-1997 BB 535 Diode capacitance CT = f (VR) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) f = 1MHz 20 10 -1 pF 1/°C 16 CT TCc 10 -2 14 12 10 -3 10 8 6 10 -4 4 2 0 0 5 10 15 20 V 10 -5 0 10 30 10 1 V VR VR Normalized diode capacitance Reverse current IR = f (TA) C(TA) / C(25°C)= f (TA) VR = 28V f = 1MHz, VR= Parameter 10 3 1.06 pA CTA/C25 - IR 1V 10 2 2V 1.02 25V 1.00 10 1 0.98 0.96 -30 -10 10 30 Semiconductor Group 50 70 °C TA 10 0 -10 110 3 10 30 50 70 °C TA 100 Jan-08-1997 BB 535 Reverse current IR = f (VR) TA = Parameter 10 3 pA 85°C IR 10 2 25°C 10 1 10 0 10 -1 0 10 10 1 V VR Semiconductor Group 4 Jan-08-1997