IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4555 Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung • Kurze Schaltzeiten • High Power Infrared LED • Short switching times Anwendungen Applications • Infrarotbeleuchtung für CMOS Kameras • Sensorik • Datenübertragung • Infrared Illumination for CMOS cameras • Sensor technology • Data transmission Sicherheitshinweise Safety Advices Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefährlich für das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, müssen gemäß den Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Typ Type Bestellnummer Ordering Code Strahlstärkegruppierung1) (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping1) Ie (mW/sr) SFH 4555 Q65110A7341 ≥ 160 (typ. 500) 1) gemessen bei einem Raumwinkel Ω = 0.001 sr / measured at a solid angle of Ω = 0.001 sr 2009-05-14 1 SFH 4555 Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top , Tstg – 40 … + 100 °C Sperrspannung Reverse voltage VR 5 V Vorwärtsgleichstrom Forward current IF 100 mA Stoßstrom, tp = 10 μs, D = 0 Surge current IFSM 1.5 A Verlustleistung Power dissipation Ptot 180 mW 450 K/W Wärmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgröße je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA λpeak 860 nm Centroid-Wellenlänge der Strahlung Centroid wavelength IF = 100 mA λcentroid 850 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA Δλ 42 nm Abstrahlwinkel Half angle ϕ ±5 Grad deg. Aktive Chipfläche Active chip area A 0.09 mm2 Abmessungen der aktiven Chipfläche Dimension of the active chip area L×B L×W 0.3 × 0.3 mm² 2009-05-14 2 SFH 4555 Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Ω Switching times, Ιe from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Ω tr , tf 12 ns VF VF 1.5 (< 1.8) 2.4 (< 3.0) V V Sperrstrom Reverse current IR not designed for μA reverse operation Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms Φe typ 50 mW Temperaturkoeffizient von Ie bzw. Φe, TCI IF = 100 mA Temperature coefficient of Ie or Φe, IF = 100 mA – 0.5 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV – 0.7 mV/K Temperaturkoeffizient von λ, IF = 100 mA Temperature coefficient of λ, IF = 100 mA TCλ + 0.3 nm/K Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs 2009-05-14 3 SFH 4555 Strahlstärke Ie in Achsrichtung1) gemessen bei einem Raumwinkel Ω = 0.001 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.001 sr Bezeichnung Parameter Symbol Werte Values Einheit Unit SFH 4555 -BW SFH 4555 -CW SFH 4555 -DW Strahlstärke Ie min Radiant intensity Ie max IF = 100 mA, tp = 20 ms 160 320 250 500 400 800 mW/sr mW/sr Strahlstärke Radiant intensity IF = 1 A, tp = 100 μs 1500 2000 3000 mW/sr 1) Ie typ Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one group in one packing unit (variation lower 2:1) Abstrahlcharakteristik Radiation Characteristics Irel = f (ϕ) 40˚ 30˚ 20˚ 10˚ 0˚ OHF03594 ϕ 50˚ 0.8 60˚ 0.6 70˚ 0.4 80˚ 0.2 0 90˚ 100˚ 1.0 2009-05-14 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 4 120˚ SFH 4555 Relative Spectral Emission Irel = f (λ) Single pulse, tp = 20 μs OHF04135 100 Ie = f (IF) Ie 100 mA Radiant Intensity OHL01715 101 100 80 10 OHR00880 125 Ι F mA Ie I e (100 mA) I rel % Max. Permissible Forward Current IF = f (TA), RthJA = 450 K/W 0 5 75 60 10-1 5 40 50 10-2 20 0 700 25 5 750 800 nm 950 850 10-3 0 10 5 10 1 5 10 2 λ Forward Current IF = f (VF) Single pulse, tp = 20 μs IF Permissible Pulse Handling Capability IF = f (τ), TA = 25 °C, duty cycle D = parameter OHL01713 0 10 A 1.6 IF A 1.4 OHF02505 t 5 0.005 0.01 0.02 0.033 0.05 0.1 0.2 0.5 1 0.8 5 0.6 -3 0.4 5 10 -4 IF T D= 1.0 10 -2 tP D = TP 1.2 10 -1 10 mA 10 3 IF 0.2 0 0.5 1 1.5 2 2.5 V 3 VF 0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 tp 2009-05-14 5 0 0 20 40 60 80 ˚C 100 T SFH 4555 Maßzeichnung Package Outlines Maße in mm (inch) / Dimensions in mm (inch). Empfohlenes Lötpaddesign Wellenlöten TTW Recommended Solder Pad Design TTW Soldering 4.8 (0.189) Anode 4 (0.157) OHLPY985 Maße in mm (inch) / Dimensions in mm (inch). 2009-05-14 6 SFH 4555 Lötbedingungen Soldering Conditions Wellenlöten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskühlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2009-05-14 7 Mouser Electronics Related Product Links 720-SFH4555 - Osram Opto Semiconductor SFH 4555