SPD 28N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS(on) 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 28 A • Logic Level • dv/dt rated • 175˚C operating temperature Type Package Ordering Code Packaging SPD28N05L P-TO252 Q67040-S4122 Tape and Reel SPU28N05L P-TO251 Q67040-S4114-A2 Tube Pin 1 Pin 2 Pin 3 G D S Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC = 25 ˚C 28 TC = 100 ˚C 20 Pulsed drain current Unit IDpulse 112 EAS 140 EAR 7.5 dv/dt 6 Gate source voltage VGS –20 V Power dissipation Ptot 75 W -55... +175 ˚C TC = 25 ˚C Avalanche energy, single pulse mJ ID = 28 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs IS = 28 A, VDS = 40 V, di/dt = 200 A/µs, Tjmax = 175 ˚C TC = 25 ˚C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 Data Sheet 55/175/56 1 06.99 SPD 28N05L Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 2 Thermal resistance, junction - ambient, leded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm 2 cooling area1) - - 50 K/W Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 55 - - Gate threshold voltage, VGS = VDS ID = 50 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current I DSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA µA VDS = 50 V, VGS = 0 V, T j = 25 ˚C - 0.1 1 VDS = 50 V, VGS = 0 V, T j = 150 ˚C - - 100 - 10 100 Gate-source leakage current I GSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 4.5 V, ID = 20 A - VGS = 10 V, ID = 20 A - 0.04 0.044 0.0235 0.026 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 06.99 SPD 28N05L Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. g fs 10 20 - S Ciss - 770 960 pF Coss - 230 300 Crss - 130 165 t d(on) - 10 15 tr - 75 115 t d(off) - 30 45 tf - 20 30 Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 20 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, V GS = 4.5 V, ID = 28 A, RG = 6.8 Ω Rise time VDD = 30 V, V GS = 4.5 V, ID = 28 A, RG = 6.8 Ω Turn-off delay time VDD = 30 V, V GS = 4.5 V, ID = 28 A, RG = 6.8 Ω Fall time VDD = 30 V, V GS = 4.5 V, ID = 28 A, RG = 6.8 Ω Data Sheet 3 06.99 SPD 28N05L Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. Q gs - 4 6 Q gd - 12 18 Qg - 32 50 V(plateau) - 4 - V IS - - 28 A I SM - - 112 VSD - 1.1 1.8 V t rr - 60 90 ns Q rr - 0.15 0.25 µC Dynamic Characteristics Gate to source charge nC VDD = 40 V, ID = 28 A Gate to drain charge VDD = 40 V, ID = 28 A Gate charge total VDD = 40 V, ID = 28 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 28 A Reverse Diode Inverse diode continuous forward current TC = 25 ˚C Inverse diode direct current,pulsed TC = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 56 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 06.99 SPD 28N05L Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ≥ 10 V SPD28N05L SPD28N05L 80 30 A W 24 22 20 50 ID Ptot 60 18 16 40 14 12 30 10 8 20 6 4 10 2 0 0 20 40 60 80 0 0 100 120 140 160 ˚C 190 20 40 60 80 100 120 140 160 ˚C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 ˚C parameter : D = tp /T 10 3 SPD28N05L 10 1 SPD28N05L K/W A 10 0 tp = 15.0µs 10 -1 DS /I D ID Z thJC 10 2 D = 0.50 V 100 µs 0.20 DS ( 0.10 R 10 1 on ) = 10 -2 0.05 1 ms 10 DC 10 0 10 1 V 10 10 -4 -7 10 2 VDS Data Sheet 0.01 single pulse 10 ms 10 0 -1 10 0.02 -3 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 06.99 SPD 28N05L Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS SPD28N05L 70 SPD28N05L Ptot = 75W 0.15 A Ω 60 l kj i h 55 b 3.0 0.12 50 f c 3.5 0.11 45 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 40 e 35 30 RDS(on) ID b VGS [V] a 2.5 g d e f 0.10 0.09 0.08 0.07 d i 6.5 25 j 7.0 0.06 20 k 8.0 0.05 l 10.0 c c g 0.04 15 i k 0.03 10 b 0.02 VGS [V] = 5 0.01 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 h j l V 5.0 0.00 0 VDS b 3.0 c 3.5 10 d 4.0 e f 4.5 5.0 g 5.5 20 30 h i 6.0 6.5 j 7.0 40 k l 8.0 10.0 A 60 ID Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on)max gfs = f(ID ); Tj = 25˚C parameter: gfs 25 60 A S ID gfs 40 15 30 10 20 5 10 0 1 2 3 4 V 0 0 6 VGS Data Sheet 10 20 30 40 A 60 ID 6 06.99 SPD 28N05L Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 50 µA parameter : ID = 20 A, VGS = 4.5 V SPD28N05L 3.0 V 0.15 Ω 2.4 VGS(th) RDS(on) 0.12 0.11 0.10 0.09 2.0 1.8 1.6 0.08 1.4 0.07 98% typ 0.06 1.2 1.0 0.05 max 0.8 0.04 0.6 0.03 typ 0.4 0.02 0.2 0.01 0.00 -60 2.2 min 0.0 -60 -20 20 60 100 140 ˚C -20 20 60 100 140 200 ˚C 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 SPD28N05L A pF C IF 10 2 10 3 Ciss 10 1 Tj = 25 ˚C typ Tj = 175 ˚C typ Coss Tj = 25 ˚C (98%) Tj = 175 ˚C (98%) Crss 10 2 0 10 20 V 10 0 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 06.99 SPD 28N05L Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 28 A, V DD = 25 V RGS = 25 Ω VGS = f (QGate ) parameter: ID puls = 28 A SPD28N05L 150 16 V 12 EAS VGS mJ 10 8 0,2 VDS max 0,8 VDS max 6 50 4 2 0 20 40 60 80 100 120 140 ˚C 0 0 180 Tj 10 20 30 40 55 nC Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD28N05L 66 V V(BR)DSS 64 62 60 58 56 54 52 50 -60 -20 20 60 100 140 ˚C 200 Tj Data Sheet 8 06.99