INFINEON BSO307N

Preliminary Data
BSO 307N
SIPMOS  Small-Signal-Transistor
Product Summary
Features
• Dual N channel
Drain source voltage
VDS
•
Drain-Source on-state resistance
RDS(on)
Continuous drain current
ID
Enhancement mode
• Avalanche rated
30
V
0.05
Ω
5
A
• Logic Level
• dv/dt rated
Type
Package
Ordering Code
BSO 307 N
SO 8
Q67000-S4012
Maximum Ratings, at T j = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current, one channel active
ID
5
IDpulse
20
EAS
55
mJ
Avalanche current,periodic limited by T jmax
Avalanche energy, periodic limited by Tjmax
IAR
5
A
EAR
0.2
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation, one channel active
Ptot
2
W
˚C
Value
Unit
A
T A = 25 ˚C
Pulsed drain current, one channel active
T A = 25 ˚C
Avalanche energy, single pulse
I D = 5 A, VDD = 25 V, R GS = 25 Ω
mJ
kV/µs
I S = 5 A, V DS = 24 V, di/dt = 200 A/µs,
T jmax = 150 ˚C
T A = 25 ˚C
Operating temperature
Tj
-55...+150
Storage temperature
Tstg
-55 ... +150
IEC climatic category; DIN IEC 68-1
Data Sheet
55/150/56
1
05.99
BSO 307N
Thermal Characteristics
Symbol
Parameter
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
RthJS
-
-
35
Thermal resistance @ 10 sec., min. footprint
Rth(JA)
-
-
100
Thermal resistance @ 10 sec.,
Rth(JA)
-
-
62.5
K/W
6 cm2 cooling area 1)
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
V(BR)DSS
30
-
-
Gate threshold voltage, VGS = VDS
I D = 20 µA
VGS(th)
1.2
1.6
2
Zero gate voltage drain current
IDSS
Static Characteristics
Drain- source breakdown voltage
V
VGS = 0 V, I D = 0.25 mA, T j = 25 ˚C
µA
VDS = 30 V, V GS = 0 V, T j = 25 ˚C
-
0.1
1
VDS = 30 V, V GS = 0 V, T j = 150 ˚C
-
10
100
-
10
100
Gate-source leakage current
IGSS
nA
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
Ω
RDS(on)
VGS = 4.5 V, I D = 4.1 A
-
0.05
0.075
VGS = 10 V, I D = 5 A
-
0.035
0.05
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet
2
05.99
BSO 307N
Electrical Characteristics
Symbol
Parameter
Values
Unit
min.
typ.
max.
gfs
2
6
-
S
Ciss
-
400
500
pF
Coss
-
160
200
Crss
-
70
90
td(on)
-
22
33
ns
tr
-
22
33
ns
td(off)
-
22
33
ns
tf
-
25
38
ns
Characteristics
Transconductance
VDS≥2*I D*RDS(on)max , ID = 4.1 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 15 V, V GS = 4.5 V, ID = 4.1 A,
RG = 16 Ω
Rise time
VDD = 15 V, V GS = 4.5 V, ID = 4.1 A,
RG = 16 Ω
Turn-off delay time
VDD = 15 V, V GS = 4.5 V, ID = 4.1 A,
RG = 16 Ω
Fall time
VDD = 15 V, V GS = 4.5 V, ID = 4.1 A,
RG = 16 Ω
Data Sheet
3
05.99
BSO 307N
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
QG(th)
-
0.4
0.6
Gate charge at Vgs=5V
VDD = 15 V, ID = 4.1 A, VGS = 0 to 5 V
Qg(5)
-
8
12
Gate charge total
Qg
-
13
20
V(plateau)
-
3.2
-
V
IS
-
-
5
A
I SM
-
-
20
VSD
-
0.85
1.4
V
t rr
-
25
38
ns
Q rr
-
20
30
µC
at Tj = 25 ˚C, unless otherwise specified
Dynamic Characteristics
Gate charge at threshold
nC
VDD = 15 V, ID = 0.1 A, VGS = 0 to 1 V
nC
VDD = 15 V, ID = 4.1 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 15 V, ID = 4.1 A
Reverse Diode
Inverse diode continuous forward current
TA = 25 ˚C
Inverse diode direct current,pulsed
TA = 25 ˚C
Inverse diode forward voltage
VGS = 0 V, I F = 10 A
Reverse recovery time
VR = 15 V, IF=IS , diF/dt = 100 A/µs
Reverse recovery charge
VR = 15 V, IF=l S , diF/dt = 100 A/µs
Data Sheet
4
05.99
BSO 307N
Power dissipation
Drain current
Ptot= f (TA)
ID = f (TA )
BSO 307 N
5.5
W
A
2.0
4.5
1.8
4.0
1.6
3.5
ID
Ptot
BSO 307 N
2.4
1.4
3.0
1.2
2.5
1.0
2.0
0.8
1.5
0.6
1.0
0.4
0.5
0.2
0.0
0
20
40
60
80
100
˚C
120
0.0
0
160
20
40
60
80
100
120
˚C
TA
TA
Safe operating area
Transient thermal impedance
ID = f ( V DS )
ZthJA = f(tp )
parameter : D = 0 , TA = 25 ˚C
parameter : D= tp/T
10
2 BSO 307 N
10 2
/ID
A
=
10 1
S(
on
V
BSO 307 N
K/W
tp = 6.0µs
DS
160
10 µs
)
RD
Z thJA
ID
100 µs
1 ms
10 0
10 1
10 ms
D = 0.50
0.20
10
0
0.10
single pulse
10 -1
0.02
DC
10 -2 -1
10
10
0
10
1
0.01
V
10
10 -1 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
2
VDS
Data Sheet
0.05
s
10
4
tp
5
05.99
BSO 307N
Typ. output characteristics
Drain-source on-resistance
I D = f (VDS)
RDS(on) = f (Tj)
parameter: tp = 80 µs
parameter : I D = 4.1 A, VGS = 4.5 V
BSO 307 N
BSO 307 N
Ptot = 2W
A
0.18
l
kf
ge d
jih
Ω
VGS [V]
a
2.5
10
9
ID
8
7
c
6
5
4
3
b
3.0
c
3.5
d
4.0
e
4.5
f
5.0
g
5.5
h
6.0
i
6.5
j
7.0
k
8.0
l
10.0
0.14
RDS(on)
12
0.10
98%
0.08
typ
0.06
0.04
b
2
0.12
0.02
1
a
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
0.00
-60
5.0
VDS
-20
20
60
100
˚C
180
Tj
Typ. capacitances
C = f (VDS)
parameter: V GS = 0 V, f = 1 MHz
10 3
Ciss
pF
C
Coss
10 2
Crss
10 1
0
5
10
15
20
25
30
V
40
VDS
Data Sheet
6
05.99
BSO 307N
Typ. transfer characteristics I D= f (VGS)
Gate threshold voltage
parameter: tp = 80 µs
VDS ≥ 2 x I D x RDS(on) max
VGS(th) = f (Tj)
parameter : VGS = VDS , ID = 20 µA
12
3.2
A
V
10
2.4
VGS(th)
9
ID
8
7
6
2.0
1.6
5
1.2
max
0.8
typ
0.4
min
4
3
2
1
0
1.8
2.0
2.2
2.5
2.8
3.0
3.2
3.5
V
0.0
-60
4.0
-20
20
60
100
V
160
Tj
VGS
Forward characteristics of reverse diode
I F = f (VSD)
parameter: Tj , tp = 80 µs
10 2
BSO 307 N
A
IF
10 1
10 0
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
10 -1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Data Sheet
7
05.99
BSO 307N
Avalanche Energy EAS = f (Tj)
Typ. gate charge
parameter: ID = 5 A, VDD = 25 V
RGS = 25 Ω
VGS = f (Q Gate)
parameter: ID puls = 4.1 A
BSO 307 N
60
16
V
mJ
40
VGS
EAS
12
30
10
8
0,2 VDS max
6
0,8 VDS max
20
4
10
2
0
20
40
60
80
100
120
Drain-source breakdown voltage
˚C
0
0
160
Tj
2
4
6
8
10
12
14
16 nC 19
Q Gate
V(BR)DSS = f (Tj)
BSO 307 N
37
V
V(BR)DSS
35
34
33
32
31
30
29
28
27
0
20
40
60
80
100
120
˚C
160
Tj
Data Sheet
8
05.99