REFLECTIVE OBJECT SENSOR QRE1113.GR PACKAGE DIMENSIONS 0.114 (2.90) 0.099 (2.50) 0.024 (0.60) 0.016 (0.40) 3 4 0.130 (3.30) 0.122 (3.10) 0.079 (2.0) 0.063 (1.60) 1 2 30° 0.063 (1.60) 0.055 (1.40) SCHEMATIC 0.043 (1.10) 0.035 (0.90) 0.024 (0.61) NOM (4X) 0.193 (4.90) 0.177 (4.50) PIN 1 ANODE PIN 3 COLLECTOR PIN 2 CATHODE PIN 4 EMITTER NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions 1 2 3 4 FEATURES • • • • • Phototransistor output Tape and reel packaging No contact surface sensing Miniature package Lead form style: Gull Wing © 2002 Fairchild Semiconductor Corporation Page 1 of 5 12/9/02 REFLECTIVE OBJECT SENSOR QRE1113.GR ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Symbol Rating Units TOPR -25 to +85 °C TSTG -30 to +100 °C (Iron)(2,3,4) TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C IF 50 mA Reverse Voltage VR 5 V Peak Forward Current(5) IFP 1 mA Power Dissipation(1) PD 75 mW Collector-Emitter Voltage VCEO 30 V Emitter-Collector Voltage VECO 5 V IC 20 mA PD 50 mW Soldering Temperature EMITTER Continuous Forward Current SENSOR Collector Current Power Dissipation(1) ELECTRICAL / OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS INPUT DIODE Forward Voltage IF = 20 mA VF — 1.2 1.6 V Reverse Leakage Current VR = 5 V IR — — 10 µA Peak Emission Wavelength IF = 20 mA λPE — 940 — nm VCE = 20 V, IF = 0 mA ID — — 100 nA IF = 20 mA, VCE = 5 V IC(ON) 0.15 0.40 — mA V OUTPUT TRANSISTOR Collector-Emitter Dark Current COUPLED On-State Collector Current Saturation Voltage Rise Time Fall Time VCE (SAT) — — 0.3 tr — 20 — tf — 20 — VCC = 5 V, IC(ON) = 100 µA, RL = 1KΩ µs NOTES: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16” (1.6mm) from housing. 5. Pulse conditions: tp = 100 µs; T = 10 ms. © 2002 Fairchild Semiconductor Corporation Page 2 of 5 12/9/02 REFLECTIVE OBJECT SENSOR QRE1113.GR TYPICAL PERFORMANCE CURVES Fig. 2 Collector Current vs. Forward Current 1.0 1.0 IF = 10 mA VCE = 5 V TA = 25˚C 0.8 IC (ON) - COLLECTOR CURRENT (mA) IC (ON)- NORMALIZED COLLECTOR CURRENT Fig. 1 Normalized Collector Current vs. Distance between device and reflector d 0 0.6 0.4 Sensing Object: White Paper (90% reflective) 0.2 Mirror 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 0.0 5 0 d-DISTANCE (mm) d = 1 mm, 90% reflection TA = 25˚C 1.6 IF = 25mA 1.2 IF =20mA 1.0 0.8 IF =15mA 0.6 IF =10mA 0.4 IF =5mA 0.2 0.0 0.1 1 16 20 102 Normalized to: VCE = 10 V TA = 25˚C 10 VCE = 10 V VCE = 5 V 101 100 10-1 10-2 25 40 55 70 85 TA - Ambient Temperature (˚C) VCE - COLLECTOR EMITTER VOLTAGE (V) © 2002 Fairchild Semiconductor Corporation 12 Fig. 4 Collector Emitter Dark Current (Normalized) vs. Ambient Temperature ICEO - NORMALIZED DARK CURRENT IC (ON) - COLLECTOR CURRENT (mA) 2.0 1.4 8 IF - FORWARD CURRENT (mA) Fig. 3 Collector Current vs. Collector to Emitter Voltage 1.8 4 Page 3 of 5 12/9/02 REFLECTIVE OBJECT SENSOR QRE1113.GR Fig. 6 Rise and Fall Time vs. Load Resistance Fig. 5 Forward Current vs. Forward Voltage 100 VCC = 10 V tpw = 100 us T=1ms TA = 25˚C TA = 25˚C 40 RISE AND FALL TIME (us) IF - FORWARD CURRENT (mA) 50 30 20 10 0 1.0 1.1 1.2 1.3 1.4 tf IC = 0.3 mA tr 10 tf tr IC = 1 mA 1 0.1 1.5 1 VF - FORWARD VOLTAGE (V) 10 RL - LOAD RESISTANCE (KΩ) Fig. 7 Forward Voltage vs. Ambient Temperature VF - FORWARD VOLTAGE (V) 3.0 2.5 2.0 IF = 50 mA 1.5 IF = 20 mA IF = 10 mA 1.0 0.5 0.0 -40 -20 0 20 40 60 80 TA - AMBIENT TEMPERATURE (˚C) © 2002 Fairchild Semiconductor Corporation Page 4 of 5 12/9/02 REFLECTIVE OBJECT SENSOR QRE1113.GR DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. © 2002 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 5 of 5 12/9/02