PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 QSD123 QSD124 PACKAGE DIMENSIONS 0.195 (4.95) REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN EMITTER COLLECTOR SCHEMATIC 0.500 (1.25) 0.100 (2.54) NOM COLLECTOR 0.240 (6.10) 0.215 (5.45) NOTES: 0.020 (0.51) SQ. (2X) EMITTER 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. DESCRIPTION The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package. FEATURES • NPN Silicon Phototransistor • Package Type: T-1 3/4 • Notched Emitter: QED12X/QED22X/QED23X • Narrow Reception Angle: 24°C • Daylight Filter • Package Material and Color: Black Epoxy • High Sensitivity 2001 Fairchild Semiconductor Corporation DS300361 7/20/01 1 OF 4 www.fairchildsemi.com PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 ABSOLUTE MAXIMUM RATINGS QSD123 QSD124 (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V mW NOTE: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16” (1.6mm) minimum from housing. 5. ! = 880 nm, AlGaAs. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER Peak Sensitivity Wavelength Reception Angle Collector Emitter Dark Current Collector Emitter Breakdown Emitter Collector Breakdown On-State Collector Current(5) QSD122 QSD123 QSD124 Saturation Voltage(5) Rise Time Fall Time www.fairchildsemi.com (TA =25°C) TEST CONDITIONS SYMBOL MIN TYP MAX UNITS VCE = 10 V, Ee = 0 IC = 1 mA IE = 100 µA !PS " ICEO BVCEO BVECO — — — 30 5 880 ±12 — — — — — 100 — — nm Deg. nA V V Ee = 0.5 mW/cm2, VCE = 5 V IC (ON) Ee = 0.5 mW/cm2, IC = 0.5 mA VCE (SAT) tr tf 1.00 4.00 6.00 — — — — — — — 7 7 6.00 16.00 — 0.4 — — VCC = 5 V, RL = 100 V IC = 0.2 mA 2 OF 4 7/20/01 mA V µs DS300361 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 QSD123 QSD124 Figure 1. Light Current vs. Radiant Intensity Figure 2. Angular Response Curve 100 110 100 90 80 70 IC(ON) - Light Current (mA) 120 60 130 10 50 40 140 150 30 20 160 1 10 170 180 1.0 0.1 0.0 0.2 0.4 0.6 0.8 0.8 0.4 0.6 0.2 0.0 0.2 0.4 0.6 0.8 0 1.0 1.0 2 Ee - Radiant Intensity (mW/cm ) Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage 101 I L - Normalized Light Current ICEO - Dark Current (nA) 101 100 10-1 10-2 Ie=1mW/cm 2 Ie=0.5mW/cm 2 100 Ie=0.2mW/cm 2 Ie=0.1mW/cm 2 10-1 Normalized to: VCE = 5V Ie = 0.5mW/cm 2 10-2 TA = 25 oC 10-3 0 5 10 15 20 25 10-3 0.1 30 1 VCE - Collector-Emitter Voltage (V) 10 VCE - Collector-Emitter Voltage (V) Figure 5. Dark Current vs. Ambient Temperature ICEO - Normalized Dark Current 104 Normalized to: VCE = 25V 103 TA = 25 oC VCE =25V 102 VCE =10V 101 100 10-1 -40 -20 0 20 40 60 80 100 o TA - Ambient Temperature ( C) DS300361 7/20/01 3 OF 4 www.fairchildsemi.com PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 QSD123 QSD124 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 4 OF 4 7/20/01 DS300361