PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 QSE214 PACKAGE DIMENSIONS 0.060 (1.50) 0.174 (4.44) R 0.030 (0.76) 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN EMITTER SCHEMATIC 0.060 (1.52) 0.020 (0.51) SQ. (2X) 0.100 (2.54) Collector NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. Emitter DESCRIPTION The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package. FEATURES • • • • • • NPN Silicon Phototransistor Package Type: Sidelooker Medium Reception Angle, 50° Daylight Filter Black Epoxy Package Matching Emitter: QEE213 © 2002 Fairchild Semiconductor Corporation Page 1 of 4 7/23/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 QSE214 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Operating Temperature TOPR -40 to +100 °C Storage Temperature TSTG -40 to +100 °C (Iron)(2,3,4) TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C Collector-Emitter Voltage VCE 30 V Emitter-Collector Voltage VEC 5 V PD 100 mW Soldering Temperature Power Dissipation(1) ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Units Peak Sensitivity λPS — 880 — nM Reception Angle Θ — ±25 — Deg. ID — — 100 nA Collector Emitter Dark Current VCE = 10 V, Ee = 0 Collector Emitter Breakdown IC = 1 mA BVCEO 30 — — V Emitter Collector Breakdown IE = 100 µA BVECO 5 — — V On-State Collector Current Ee = 0.5 mW/cm2, VCE = 5 V 0.2 — 1.50 1.00 — — VCE(SAT) — — 0.4 tr — 8 — tf — 8 — (QSE213) (QSE214) IC(ON) mA VCE = 5 V(5) Saturation Voltage Ee = 0.5 mW/cm2, IC = 0.1 Rise Time Fall Time V mA(5) VCC = 5V, RL = 100Ω, IC = 1mA µs NOTES: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. 5. λ = 950 nm GaAs. © 2002 Fairchild Semiconductor Corporation Page 2 of 4 7/23/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 QSE214 TYPICAL PERFORMANCE CURVES Fig.1 Dark Current vs. Collector Emitter Voltage Fig.2 Radiation Diagram ID - DARK CURRENT (mA) 101 100 110 100 90 80 70 120 60 130 10-1 50 140 40 150 10-2 30 160 20 170 10-3 10 180 10 0 20 30 40 0 1.0 60 50 0.8 0.6 0.4 0.2 0 0.2 0.4 0.6 0.8 1.0 VCE - COLLECTOR EMITTER VOLTAGE (V) 10 Normalized to: VCE = 5 V Ie = 0.5 mW/cm2 TA = 25˚C 1 0.1 -40 -20 Fig.4 Light Current vs. Collector to Emitter Voltage IL - NORMALIZED LIGHT CURRENT IL - NORMALIZED LIGHT CURRENT Fig.3 Light Current vs. Ambient Temperature 0 20 40 60 80 100 10 Ie = 1 mW/cm2 1 Ie = 0.5 mW/cm2 Ie = 0.2 mW/cm2 0.1 Ie = 0.1 mW/cm2 0.01 Normalized to: VCE = 5 V Ie = 0.5 mW/cm2 TA = 25˚C 0.001 0.1 TA - AMBIENT TEMPERATURE (˚C) 1 10 VCE - COLLECTOR - EMITTER VOLTAGE (V) ID - NORMALIZED DARK CURRENT Fig.5 Dark Current vs. Ambient Temperature 3 10 102 Normalized to: VCE = 25 V TA = 25˚C VCE = 25 V VCE = 10 V 101 100 10-1 40 60 80 100 TA - AMBIENT TEMPERATURE (˚C) © 2002 Fairchild Semiconductor Corporation Page 3 of 4 7/23/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 QSE214 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. © 2002 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 4 of 4 7/23/02