QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 (3.0) 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5) COLLECTOR • Surface Mount PLCC-2 Package COLLECTOR • Wide Reception Angle, 120° 0.024 (0.6) 0.016 (0.4) 0.007 (.18) 0.005 (.12) • High Sensitivity • Phototransistor Output NOTES: • Matched Emitter: QEB421 EMITTER 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. NOTES ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature (TA = 25°C unless otherwise specified) Symbol Rating Unit TOPR -55 to +100 °C Storage Temperature TSTG -55 to +100 °C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C Collector Emitter Voltage VCE 35 V Emitter Collector Voltage VEC 5 V Collector Current IC 15 mA Power Dissipation(1) PD 165 mW ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER 1. Derate power dissipation linearly 2.2 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. D = 940 nm. (TA =25°C) SYMBOL MIN TYP MAX Peak Sensitivity Wavelength TEST CONDITIONS DPS — 880 — Wavelength Sensitivity Range DSR 400 — 1000 0 — 120 — Reception Angle Collector Emitter Dark Current UNITS nm nm Deg. VCE = 25 V, Ee = 0 ID — — 200 nA IC = 1 mA BVCEO 30 — — V Collector Emitter Breakdown Emitter Collector Breakdown IE = 100 µA BVECO 5 — — V Ee = 0.1 mW/cm2(4), VCE = 5 V IC (ON) 16 — — µA Ee = 0.5 mW/cm2(4), IC = 0.05 mA VCE (SAT) — — 0.3 V Rise Time VCC = 5 V, RL = 100 1 tr — 8 — µs Fall Time IC = 1 mA tf — 8 — µs On-State Collector Current Saturation Voltage 2001 Fairchild Semiconductor Corporation DS300386 2/26/01 1 OF 3 www.fairchildsemi.com QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR Fig.1 Dark Current Vs. Ambient Temperature Fig.2 Dark Current Vs. Collector Emitter Voltage 10 Normalized to: VCE=25V TA=25oC 102 VCE=25V ID-Dark Current (nA) ID-Normalized Dark Current 103 VCE=10V 101 100 10-1 40 60 80 1 0.1 100 0 10 20 o TA-Ambient Temperature ( C) 30 40 50 60 VCE-Collector Emitter Voltage (V) Fig.3 Light Current Vs. Collector to Emitter Voltage Fig4. Light Current Vs. Ambient Temperature 10 10 Ee=0.5mW/cm 2 IL-Normalized Light Current IL-Normalized Light Current Ee=1mW/cm2 1 Ee=0.2mW/cm 2 Ee=0.1mW/cm 2 0.1 Normalized to: 0.01 VCE =5V Ee=0.5mW/cm2 =25oC 1 TA 0.001 0.1 1 0.1 10 -40 VCE-Collector-emitter Voltage (V) www.fairchildsemi.com Normalized to: V CE =5V Ee=0.5mW/cm22 TA =25oC -20 0 20 40 60 80 100 TA-Ambient Temperature ( oC) 2 OF 3 2/26/01 DS300386 QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. DS300386 2/26/01 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 3 OF 3 www.fairchildsemi.com